|
Contextual Info: D405-120 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 120mW laser diode● 405nm laser diode 120mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)
|
Original
|
d405-120405nm120mw |
PDF
|
diode D405
Contextual Info: D405-20 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 20mW laser diode● 405nm laser diode 20mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)
|
Original
|
d405-20405nmdiode d405 |
PDF
|
HPND4050
Abstract: IC STU 404 D HPND-4050
Contextual Info: E 3 Pa c k a r d APPLICATION NOTE 971 The HPND-4050 Beam Lead Mesa PIN in Shunt Applications INTRODUCTION The beam lead PIN diode, w h ile sa tisfyin g requirem ents fo r low ca pa citan ce and planar c irc u it attachm ent, is g e n e ra lly fa b rica te d as a planar PIN diode in o rd e r to
|
OCR Scan
|
hpnd-4050d-4050hpnd4050ic stu 404 d |
PDF
|
HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
|
Original
|
hmxr-500113001 yf 09 transistorhp 5082 70005082-0825+633150a2n6838hxtr 3101hxtr 3101 transistor5082-2815hsch-1001
|
PDF
|
zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
|
Original
|
bce0001abce0001bzener diode 1nu 9fdiode 1nu+8dla diode toshibadiode 1nu 7.1nh5 diodeschottky diode to220 15a 1000vdiode 1nu 5.1diode 1nu 6f10lc48gu 1r5
|
PDF
|
U1FWJ44P
Abstract: I-FLAT PACKAGE
Contextual Info: Schottky Barrier Diodes NEW PRODUCT GUIDE The U3FWK42 is a commercial Schottky barrier diode SBD based on sub-micron trench technology. The U3FWK42 seeks to improve on the existing trade-off between forward voltage (VF) and instantaneous reverse current (IR) in Schottky barrier diodes.
|
Original
|
u3fwk42u1fwj44pi-flat package |
PDF
|
zener smd marking GA
Abstract: S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors
Contextual Info: 2008-8 PRODUCT GUIDE Small and Medium Diodes s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1. Diode Product Tree 3 2. Key Features 4 3. New Small & Medium Diodes 5 4. Selection Guide 6 5. Symbols, Terms and Definitions
|
Original
|
bce0001fe-28831bce0001gzener smd marking ga+9s6 smd zener diodezener diode smd marking 075dl2czsmd schottky diode s6cms11cms19cmg03marking h01rf semiconductors
|
PDF
|
R1448NS
Abstract: Westcode Semiconductors R1448NS20 r1448 THYRISTOR tv 930 R1448NS14 Westcode N thyristor Westcode N thyristor Semiconductors
Contextual Info: Date:- 18 Aug, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1448NS14# to R1448NS20# Old Type Number: D405CH02-18 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1400-2000 V VDSM
|
Original
|
r1448ns14r1448ns20d405ch02-18r1448ns+5westcode semiconductorsr1448thyristor tv 930westcode n thyristorwestcode n thyristor semiconductors
|
PDF
|
c5411
Abstract: c5411 transistor S2000N equivalent 2SC5570 equivalent S2055N equivalent 2SD1555 equivalent c5411 equivalent S2055AF equivalent 2SD2539 equivalent 2SD2499 equivalent
Contextual Info: Horizontal-Deflection Output Transistors PRODUCT GUIDE Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density
|
Original
|
c5411c5411 transistors2000n equivalent2sc5570 equivalent+6s2055n equivalent2sd1555 equivalentc5411 equivalents2055af equivalent2sd2539 equivalent2sd2499 equivalent
|
PDF
|
transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
|
Original
|
transistor nec k2500nec k2500nec k2500 transistor componentnec k2500 mosfet+6cd4558cq met t3.15a 250vk2500 n-channel mosfetc5042fto-92 78l05 voltage regulator pin configurationi ball 450 watt smps repairing
|
PDF
|
2SC4288A
Abstract: c5411 c5411 transistor 2Sc5858 equivalent MA 8910 2SD2499 equivalent 2SC5446 equivalent 2sc5858 2SD2539 equivalent TV horizontal Deflection Systems
Contextual Info: 2003-9 PRODUCT GUIDE BCE0015A Horizontal-Deflection Output Transistors 2003 http://www.semicon.toshiba.co.jp/eng 1 Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density
|
Original
|
bce0015a3531c-0103f-935612sc4288a+9c5411c5411 transistor2sc5858 equivalentma 89102sd2499 equivalent2sc5446 equivalent2sc58582sd2539 equivalenttv horizontal deflection systems
|
PDF
|
schematic diagram tv sony 21 trinitron
Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV
|
Original
|
kv-ef34m80rm-951scc-u28d-ana324-m3+12a80lpd10xsbx3005-01schematic diagram tv sony 21 trinitroncxa2139scxa2130sic cxa2139sic cxa2130sc3807 transistor datasheetsony ic cxa2130sfree cxa2139sc3807 power transistorstv5112
|
PDF
|
|
Contextual Info: IRMD2231Q International Rectifier • 233 Kansas Street, El Segundo, CA 90245 IRMD22381Q Demo Board For 3-phase / 380V motor drives IR22381Q Demo Board without IGBT Power Module www.irf.com USA IRMD22381Q IRMD22381Q Demo Board For 3-phase / 380V motor drives
|
Original
|
irmd2231qirmd22381qir22381q |
PDF
|
IGBT DRIVER SCHEMATIC 3 PHASE
Abstract: IGBT desaturation Motor Driver Circuit schematic 10 ampere igbt based active filter circuit diagram IR22381Q 3phase GROUND Fault detection CIRCUIT Motor Driver Circuit schematic 20 ampere igbt desaturation driver schematic 3 phase rectifier circuit diagram igbt high power igbt AC 3 phase controller
Contextual Info: IRMD2231Q International Rectifier • 233 Kansas Street, El Segundo, CA 90245 IRMD22381Q Demo Board For 3-phase / 380V motor drives IR22381Q Demo Board without IGBT Power Module www.irf.com z USA IRMD22381Q IRMD22381Q Demo Board For 3-phase / 380V motor drives
|
Original
|
irmd2231qirmd22381qir22381qigbt driver schematic 3 phase+8igbt desaturationmotor driver circuit schematic 10 ampereigbt based active filter circuit diagram3phase ground fault detection circuitmotor driver circuit schematic 20 ampereigbt desaturation driver schematic3 phase rectifier circuit diagram igbthigh power igbt ac 3 phase controller
|
PDF
|
|
|
bridge rectifier diode toshiba
Contextual Info: Photocouplers for DAA Circuits TLP270D/TLP270G 14-Pin SOP NEW PRODUCT GUIDE Toshiba's TLP270D and TLP270G represent a new type of photocoupler; they provide many required multi-functions in DAA circuits for communication modems and are conveniently integrated into one small 14-pin SOP (SOP16 package).
|
Original
|
tlp270d/tlp270g14-pintlp270dtlp270g+1bridge rectifier diode toshiba
|
PDF
|
varo r634
Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer V VF IR IF Max RRM •FSM Max A 00 (A) 00 @ Test 25 °C @ (A) (A) IR VR Test M T2 @ Test (A) c r> Toper Package Style Max (°C) G n ral-Purp se, lo >= 25 A (Cont'd) . . . . 5 -10 .
|
Original
|
fb3504ra35435sp04dd716+16st4-40ncr35-4001n45261n1188d4055wtra1130varo r634ssie1440varo diodessie1240varo r624siemens ssie1440r622 varossie1140r628ssie1230
|
PDF
|
130001 power transistor
Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
Contextual Info: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial
|
Original
|
lzsa1000sfbt000054-------------------------------shka171285-------------------------------shka171286+10130001 power transistorfet d412d400 npn transistorq406 transistorc495 transistorfbl-00q902 transistortransistor d4121l400transistor d400
|
PDF
|
FBT-00
Abstract: D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413
Contextual Info: Pi Factors Report Page 1 of 62 SortBy: PartType/PN/RefDes Date: 1/9/2006 11:20 AM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Your Company Name Here DOC: LZSA500_P1.CIR RECORDS: 316 DESCRIPTION: LZSA500 ENV: GB TEMP: 40.00 C CF: 1.00000
|
Original
|
lzsa500sfbt000054-------------------------------shka171285-------------------------------shka171286+10fbt-00d400 npn transistorfbl-00d400 npnq4131l400d425fbnltransistor j406d413
|
PDF
|
toshiba smd marking
Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
Contextual Info: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency
|
Original
|
toshiba smd markingsa marking smd mosdong yang motorkec smd marking+6smd marking s3alg ultra slimtpc6004tpc6001tpc6002tpc6005
|
PDF
|
TIL306 Application Notes
Abstract: TIL306 so2 sensor Opto-Sensor simple Photodiode SN74123 application note block diagram of so2 sensor NE 565 texas instruments so2 sensor datasheet TSL230 sensor
Contextual Info: TSL213 64 x 1 INTEGRATED OPTO SENSOR SOES009A – D4059, NOVEMBER 1992 – REVISED AUGUST 1993 • • Contains 64-Bit Static Shift Register TOP VIEW Contains Analog Buffer With Sample and Hold for Analog Output Over Full Clock Period • • • • SI
|
Original
|
tsl213soes009ad405964-bit+11500-khztil306 application notestil306so2 sensoropto-sensorsimple photodiodesn74123 application noteblock diagram of so2 sensorne 565 texas instrumentsso2 sensor datasheettsl230 sensor
|
PDF
|
GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
|
Original
|
bce0010agt30f121gt30g121gt30g131+7mg30t1al1gt30*122gt45f12mg60m1al1gt30fgt60m301gt60m101
|
PDF
|
fabrimex
Abstract: unitronics avnet 8945 TOSHIBA
Contextual Info: European Sales Offices Toshiba European Headquarter Toshiba Electronics Europe GmbH Hansaallee 181 D-40549 Düsseldorf Tel.: +49-211-5 29 60 Fax: +49-211-5 29 64 00 Toshiba Sales Office Toshiba Electronics Europe GmbH München Office Tel.: +49-89-7 48 59 50
|
OCR Scan
|
d-40549fabrimexunitronicsavnet+18945 toshiba
|
PDF
|
s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
|
Original
|
e0010abce0010a3503c-0109s5j53+9s5783fgt30j322s5783electronic ih rice cookergt50j101mg30t1al1igbt induction cookermg60m1al1mosfet 500v 50a
|
PDF
|
thyristor handbook
Abstract: S6A13 TOSHIBA Thyristor S6992 thyristor toshiba toshiba THYRISTOR diode
Contextual Info: New Product Guide High-di /dt and High-Pulse Current Thyristor Series PRODUCT GUIDE High-di/dt, High-Pulse Current and High-Voltage Thyristor Series Overview Package Dimensions Toshiba have developed a high-voltage thyristor capable of controlling high-di/dt and
|
Original
|
o-220fls6a13s6a29thyristor handbook+4toshiba thyristors6992thyristor toshibatoshiba thyristor diode
|
PDF
|