DIODE D3S 90 Search Results

IRF9410

Contextual Info: International I"R Rectifier P D -9.1562A PRELIMINARY IRF9410 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V dss = 30V R ds oh = 0.030É2

irl1004

Abstract: RF1010
Contextual Info: PD - 9.1702 International IÖ R Rectifier IRL1004 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

PD916

Contextual Info: PD-9.1615A International TOR Rectifier FA38SA50LC HEXFET Power MOSFET • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance

IRL2910 equivalent

Abstract: 2D 1002 diode EA MOSFET 63 ng
Contextual Info: PD - 9.1384B In te rn a tio n a l IOR Rectifier IRLI2910 PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

DIODE D3S 69

Abstract: TO-22DAB source code park transform
Contextual Info: PD -9.1671 International IÖR Rectifier IRFZ44E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 60V RüS on = 0 .02 3 Í 2 Id = 48A Description Fifth Generation HEXFETs from International Rectifier

2D 1002 diode

Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Contextual Info: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

2D 1002 diode

Abstract: sot 23 d9 d3s marking
Contextual Info: PD - 9.1540B International IOR Rectifier IRLMS1902 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 20 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

DIODE D3S 5D

Contextual Info: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

Contextual Info: PD - 9 .1673A International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier

Contextual Info: P D -9.1673 International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier

Contextual Info: PD - 9.1361A International TOR Rectifier IRFI540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 100 V

DIODE D3S 5D

Abstract: diode D3s IRFZ3
Contextual Info: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A

Contextual Info: PD - 9.1497A International IÖR Rectifier IRLI540N P R E L IM IN A R Y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

DIODE D3S 90

Contextual Info: P D - 9 .1 6 4 4 Internationa lO R Rectifier IRL1004S/L PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount IRL1004S • Low-profile through-hole (IRL1004L) • Advanced Process Technology • Surface Mount • Ultra Low On-Resistance

TT 2246

Contextual Info: l o g LF2246 11 x 10-bit Image Filter i c DEVICES INCORPORATED OPTION □ 66 MHz Data and Coefficient Input and Computation Rate □ Four 11 x 10-bit Multipliers with Individual Data and Coefficient Inputs and a 25-bit Accumulator □ User-Selectable Fractional or

Contextual Info: LF2246 11 x 10-bit Image Filter FEATURES DESCRIPTION □ 66 M Hz Data and Coefficient Input and Com putation Rate □ Four 11 x 10-bit M ultipliers with Individual Data and Coefficient Inputs and a 25-bit Accumulator □ User-Selectable Fractional or Integer Two's Com plem ent Data

Contextual Info: LF3347 D E V IC E S IN C O R P O R A T E D High-Speed Image Filter with Coefficient RAM FEATURES □ 83 MHz Data Input and Compu­ tation Rate □ Four 12 x 12-bit Multipliers with Individual Data and Coefficient Inputs □ Four 256 x 12-bit Coefficient Banks

Contextual Info: HIP6021 S em iconductor F eb ru ary 1999 D ata S h eet Advanced PWM and Triple Linear Power Controller The HIP6021 provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC

DFDH2012T900S

Abstract: LPC 815 LG F11YT1 HAT2180RP G402R P06KE GP03S ara cd 100 39p LPC TPM 0603FT
Contextual Info: 1-fid e n tic i Iw in iie a u Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History ORIGINAL RELEASE A B 2006/01/12 Rev:B release. c 2006/03/17 R e v :C release. 2006/03/31 R e v :0 release. PCB STA C K U P LAY1 LAY2 LAY3 LAY4 LAY5

ZD-98 F

Abstract: ZD 98 diode zd 33 diode OA 71
Contextual Info: QS723651, QS723661 ADVANCE INFORMATION Q High-Speed CMOS 2K x 36, 4K x 36 Clocked FIFO QS723651 QS723661 FEATURES • • • • • • Clocked interface 2K/4K x 36 FIFO Programmable almost full and empty flags Bi-directional mailbox registers Adjustable retransmit

Contextual Info: / T u r m TECHNOLOGY LTC 1096/LTC 1096L _ LTC 1098/ LTC 1098L Micropower Sampling 8-Bit Serial I/O A/D Converters F€RTUR€S DCSCRIPTIO n • 80pA Maximum Supply Current ■ 1nA Typical Supply Current in Shutdown ■ 8-Pin SO Plastic Package ■ 5V Operation LTC1096/LTC1098

l 7251 3.1

Abstract: ft03e
Contextual Info: int ! MOBILE PENTIUM Il PROCESSOR IN BGA PACKAGE AT 366 MHZ, 333 MHZ, 300PE MHZ, AND 266PE MHZ Available at 266PE MHz, 300PE MHz, 333 MHz and 366 MHz Fully compatible with previous Intel microprocessors Supports the Intel Architecture with Dynamic Execution

AR629

Abstract: AR629AU9 5962-9958101QXC QML-38535 AR629AU9 Application 3T-40 AR629A diode smd marking code SG AR629A-U9 122T-T
Contextual Info: R E V IS IO N S LTR D E S C R IP T IO N D A TE Y R -M O -D A APPROVED RE V SHEET 55 56 57 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 RE V SHEET

CR331

Abstract: cursor
Contextual Info: KDA0485/0486 135MHz Monolithic CMOS Tru _Color RAM DAC s e m ic o n d u c to r Preliminary— March, 1994 FUNCTIONAL DESCRIPTION KDA0485 FEATURES • • • • • • • • • • • • • • • • 32-bit Pixel Port 135MHz, 110MHz Pixel Clock