d4515
Abstract: d209l transistor D208L
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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o-126d1148dd1151d1160+7d1173abut11ad45152sc3320bus13d209ltransistor d208l
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D1151
Abstract: D207L
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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o-1262sc36792sc3680bu508as+8bu508a2sc47472sc44302sc39962sc39972sc3998d1151d207l
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DIODE D2
Abstract: diode bandfilter Diode d3 schema foto diode DE diode
Contextual Info: I * DRIEVOU DIGE DIODE De EÀB 1 is een drievoudige diode, voor gebruik in de bekende drie-dioden schakeling, die een ideale weergaye bevordert. Zij bestaat uit een gem eenschappelijke kathode, w aarom heen drie diodeplaatjes zijn aangebracht. Diode d3 w ordt gebruikt voor de detectie, diode d1 zorgt voor de regelspanning
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diode d2diodebandfilterdiode d3+3schemafoto diodede diode
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110vaczps60-3r22atransistor mtbf+8optocupler hand booktransistor mosfettransistor r1dr24 transistoroptocuplertransformer mtbfr18ar22e
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110vaczps40-3transistor r1dtransistor r1a+8diode fr 105transistor 106 d1r22amtbf-zps400411278540r18a217f
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Contextual Info: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology
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ID101 diode
Contextual Info: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology
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diode reverse voltage protection
Abstract: ID100 ID-100
Contextual Info: ID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID100 The ID100 is a low leakage Monolithic Dual Pico-Amp Diode The ID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology
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id100diode reverse voltage protectionid-100 |
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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msc1621t1msc2404msd1819amv1620+10mv1624mv1636mv1640mv1642mv1644mv2103diode motorola 711 2n2905apin configuration transistor bc547 2n2222bc2372n555
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1N4448
Abstract: 1N4448W IMBD4448 LL4448
Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type
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1n4448wdo-351n4448ll4448+6ot-23imbd4448od-123d3/10d-7402510-sep-03
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Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type
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1n4448wdo-351n4448ll4448+6ot-23imbd4448od-123d3/10d-7402512-may-03
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Contextual Info: LSID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil LSID100 The LSID100 is a low leakage Monolithic Dual Pico-Amp Diode The LSID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must be
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BAS70-07S
Abstract: BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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marking D33
Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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fmmd914bav70bav74bav99+10baw56100madiode g21marking g21 z5ld4rabzx84-c27bzx84c18g21 transistorbzx84c3v0bzx84
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110vaczpd40-512zd1 1014217f+5c10ac12acapacitor ceramicoptocuplertransistor mtbf
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D3012B5
Contextual Info: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1
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scr 300 amps
Abstract: T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S
Contextual Info: DIODE CAPSULES & SCR CAPSULES Diode Capsules CKE Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm volts 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500
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d30p400sd30p1200sd38p750sd38p1000s+13d38p1000s1d38p1000s3d38p1200sd38p1500sd52p1800sd52p2400sscr 300 ampst30p600sscr 250 amps 2000 voltd77p4400t52p800s5000 volt scrt30p700s
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Contextual Info: 1000V 75A APT75DQ100B APT75DQ100S APT75DQ100BG* APT75DQ100SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE B PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode
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apt75dq100bapt75dq100sapt75dq100bgapt75dq100sg+1o-247
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217F
Abstract: resistor film transistor MTBF L2 diode 725
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa40-5217fresistor filmtransistor mtbf+1l2 diode 725
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ZPSA60-15
Abstract: FR 306 Diode 217F
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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fmmd914bav70bav74bav99+15baw56100mabzx84fmmd3102bzx84-c3v0bzx84-c3v3diode lz 66diode lz. 58bzx84c20bzx84-c27diode marking w8bzx84-c5v1bzx84c18diode marking x6bzx84-c15
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DIODE 4008
Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa40-12diode 4008diode" 4008217f+4capacitor electrolyticzener3optocupler105 capacitor
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217F
Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa60-12217fcapacitor variable ceramiczd1 1014+1105 capacitor
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