DIODE D2B Search Results

BCS028N06NS

Abstract: 028N06NS DC1502
Contextual Info: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a

BZW14 diode

Abstract: BZW14
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl QOHbTT'i 070 M A P X BZW14 A TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended for transient suppression in telephony equipment.

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current

FDS3732

Abstract: 3b transistor
Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current

LTC4359CMS8

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current

IN751a

Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current

Contextual Info: N AUER PHILIPS/DISCRETE blE I> bb53^31 DDSbbT1! ITT IAPX BYX90G E.H.T. AVALANCHE FAST SOFT-RECOVERY DIODE E.H.T. rectifier diode in glass envelope intended for general purpose high-voltage rectifying and also designed as sub-component for very high voltage stacks, fo r example, in X-ray equipment with fre­

Contextual Info: S i G E C AUGUST 1995 P L E S S E Y S E M I C O N D U C T O R S DS4169-2.3 DS1109SG RECTIFIER DIODE KEY PARAMETERS APPLICATIONS Rectification. V RRM • Freewheel Diode. U 710A U 11500A ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

MMD0840

Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
Contextual Info: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2

6.4v zener diode

Abstract: 8251 1N4565 1N4565A 1N4566 1N4566A 1N4567 1N4568 1N4569 LE17
Contextual Info: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584AD2A 1N4565 - 1N4584AD2B • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available

1N4148DLCC2

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N4148DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

Marking D2B

Abstract: 1N5806 1N5806-DLCC2
Contextual Info: DIODE, SILICON, SWITCHING 1N5806-DLCC2 IN ACCORDANCE WITH ESCC 5101/014 Detail Specification No: 8586 Aerospace Division Issue :1 November 2009 SEMELAB Ltd 2009 1N5806-DLCC2-SCD SML-TMPL-ER-001-ISS1 Contents Page CONTENTS . 2

1N6642

Abstract: LE17 MIL-PRF19500 QR217 l2d diode
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

QR217

Abstract: LE17 MIL-PRF19500
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

Contextual Info: SiC SCHOTTKY DIODE SML02SC06D2A/SML02SC06D2B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

LE17

Abstract: MIL-PRF19500 QR217 QR* MARKING precap
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

1N4148

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: 500mW ZENER DIODE 1N6328DLCC2 • • • Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated PT TJ TSTG TSP

LE17

Abstract: MIL-PRF19500 QR217 1N5806-DLCC2 1n5806d
Contextual Info: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806DLCC2 • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Reliability Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tamb = 25°C unless otherwise stated

1N5806 d-5a

Abstract: 1N5806D2A LE17 MIL-PRF19500 QR217 1N5806D2B-JQRS
Contextual Info: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806D2A / 1N5806D2B • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Rel Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

melf diode D-5A

Abstract: melf diode marking MELF pad layout marking diode D2B gold melf QR217 1N4460US 1N5806US 1N5819 LE17
Contextual Info: DIODE LEADLESS CHIP CARRIER DLCC2 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-5.1 D-5A ” / “A-MELF” packages† • Designed For High Reliability Military, Aerospace and Space Applications

1N4565

Abstract: 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
Contextual Info: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584ADLCC2 • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.