DIODE D25 N10 R Search Results

Contextual Info: J □IXYS p VDSS ^D 25 IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V M e g a M O S F E T 67 A 75 A D S on 25 m£2 20 mß N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25°C to 150°C 100 V vDGR T j = 25 °C to 150°C; RGS = 1 Mi2 100 V

IXFN150N10

Abstract: 150N10
Contextual Info: HiPerFETTM Power MOSFET IXFN 150 N10 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous

diode t25 4 k8

Abstract: diode t25 4 B9 diode t25 4 H9 diode t25 4 k5 diode t25 4 L9 diode AA17 diode t25 4 k6 diode t25 4 g8 diode t25 4 G9 T4 w4 DIODE
Contextual Info: Pin Information For The Stratix EP1S10 Device, ver 3.1 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 VREF Bank Pin Name/Function Optional Function s

Diode D25 N12

Abstract: diode AA17 diode AA19 diode t25 4 G9 diode t25 4 H9 AA12 diode diode t25 4 L9 diode t25 4 g8 diode t25 4 k8 diode M21
Contextual Info: Pin Information For The Stratix EP1S10 Device, ver 3.3 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1 B1

diode t25 4 H9

Abstract: diode t25 4 L9 diode t25 4 k6 diode t25 4 k8 diode t25 4 G9 diode t25 4 F8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode t25 4 L8
Contextual Info: Pin Information For The Stratix EP1S10 Device, ver 3.7 Note 2 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B1 B1 B1 B1 B1 B1 B1 B1 B1

diode t25 4 k8

Abstract: diode t25 4 L9 diode t25 4 g8 diode t25 4 G9 diode t25 4 k6 diode t25 4 B9 Diode D25 N12 diode t25 4 d7 diode t25 4 j6 diode t25 4 F6
Contextual Info: Pin Information For The Stratix EP1S20 Device, ver 3.1 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2

diode t25 4 H9

Abstract: diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 F8 diode t25 4 e9 diode t25 4 e8 diode t25 4 g8 diode t25 4 L9
Contextual Info: Pin Information For The Stratix EP1S25 Device, ver 3.6 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2

diode t25 4 H9

Abstract: diode t25 4 L9 diode t25 4 G9 diode t25 4 j3 diode t25 4 k8 diode t25 4 k6 diode AA19 diode T25 4 F8 diode t25 4 g8 diode t25 4 L5
Contextual Info: Pin Information For The Stratix EP1S20 Device, ver 3.6 Note 2 Bank Number VREF Bank Pin Name/Function Optional Function(s) B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2

a562 transistor

Abstract: transistor A562 d2118 DSP1c D61 6A-1 D2730 transistor D1812 H3C1 A966 transistor power 22E
Contextual Info: Freescale Semiconductor User’s Guide PTKIT8101UG Rev. 1, 9/2005 MSC8101 Packet Telephony Farm Card MSC8101PFC The MSC8101 DSP subsystem on the MSC8101 packet telephony farm card (MSC8101PFC) performs the signal processing functions for voice, fax, and modem data

w10 mic package bridge rectifier

Abstract: smd diode B64 ferrite core tdk pc30 DIN41612 connectors ERNI bob smith termination POE bob smith termination schematic molex tdk ferrite pc30 MF3 IC D41 schottky barrier diode b22 Flash SIMM 80 programmer
Contextual Info: MSC8101 Application Development System User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described

LSISAS1068

Abstract: LSISASx12 LSI Logic SAS controller chip I2C sas SFF8485 PAR64 SFF-8485 TX6 RX6 JZ02-000015-00 M4G-21
Contextual Info: LSISAS1068 8-Port, 3 Gbit/s Serial Attached SCSI Controller Datasheet Version 2.0 The LSISAS1068 is an eight, port 3.0 Gbit/s SAS/SATA controller that is compliant with the Fusion-MPT architecture, provides a PCI-X interface, and supports Integrated RAID.

diode t25 4 B9

Abstract: AG27 diode AG14 diode t25 4 G9 diode ah18 diode t25 4 L9 aj29 diode AC31 diode AG14 diode t25 4 L5
Contextual Info: Pin Information For The Stratix EP1S40 Device, ver 3.6 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF Bank Pin Name/Function VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2

diode t25 4 k8

Abstract: AE21 ARRAY DIODE B956 F1020 k16 a21 AF27 diode t25 4 L8 ag23 diode ab24 af30 diode
Contextual Info: Pin Information For The Stratix EP1S30 Device, ver 3.6 Bank Number B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 B2 VREF Bank Pin Name/Function VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2 VREF0B2

LH7A400

Abstract: AC97 ARM922T ISO7816
Contextual Info: LH7A400 32-Bit System-on-Chip Preliminary Data Sheet FEATURES • Three Programmable Timers • ARM922T Core: – 32-bit ARM9TDMI™ RISC Core – 16KB Cache: 8KB Instruction Cache and 8KB Data Cache – MMU Windows CE Enabled • Three UARTs – Classic IrDA (115 kbit/s)

pin diagram 4.7K variable resistor

Abstract: SM320VC33
Contextual Info: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33−EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40 °C to 100°C A Suffix , and -55 °C to 125°C (M Suffix)

SM320VC33

Contextual Info: SM320VC33-EP DIGITAL SIGNAL PROCESSOR SGUS037C - AUGUST 2002 - REVISED JANUARY 2003 D Controlled Baseline D D D D D D D D D D D † - One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -40°C to 100°C A Suffix , and -55°C to 125°C (M Suffix)