DIODE D16 Search Results

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

4148

Abstract: diode 4148 in 4148 DIODE D16 in 4148 PIN DIAGRAM 4148 diode 4148 diode datasheet MAX 4148 D16-4148 D16-4150
Contextual Info: D16-4148 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 D16-4150 Switching Diode Array FEATURES • • • 8 Diode Array Standard 16 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL • • •

D1665C5

Abstract: Infineon power diffusion process idh16g65c5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

D1665C5

Abstract: IDW16G65C5
Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the

D1665C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

LTC4098-3.6

Abstract: 6N16 l436 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

NEC 2101

Abstract: 1SS304 marking A6
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.

Contextual Info: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA

D8 marking, SOD123

Contextual Info: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23

DIODE D28 06 43

Abstract: AZ23C33-V D22 diode marking code AZ23C3V0 d29 08 BZX84C DZ23 BZT52C AZ23B51-V diode D7 SOD-123
Contextual Info: AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with

D8 marking, SOD123

Contextual Info: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23

SP720

Abstract: 150pf 6kv AN9304 AN9612 SP720MD SP720MD-8 SP720MM SP720MM-8 CLCC automotive SCR PIN CONFIGURATION DRAWING
Contextual Info: Data Sheet July 1999 High Reliability Electronic Protection Array for ESD and Overvoltage Protection The SP720 is a High Reliability Array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP720 has 2 protection SCR/Diode

Diode d29 08

Abstract: DIODE D29 -08
Contextual Info: AZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

DIODE D29 -08

Abstract: zener diode d27 Diode d29 08
Contextual Info: AZ23 Series VISHAY Vishay Semiconductors Dual Common-Anode Zener Diodes Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

AZ23C3V0

Abstract: d29 08 AZ23C2V7 AZ23C3V3 AZ23C3V6 AZ23C3V9 AZ23C4V3 BZT52C BZX84C DZ23
Contextual Info: AZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the

TRANSISTOR K 314

Abstract: NEC semiconductor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in

Contextual Info: AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the