DIODE D 54 Search Results

Contextual Info: BAS16 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Order Instruction Type BAS16 Type Differentiation

BAS16-GS08

Abstract: BAS16
Contextual Info: BAS16 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Order Instruction Type BAS16 Type Differentiation

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

1N4151

Abstract: MCL4151
Contextual Info: MCL4151 Vishay Telefunken Fast Switching Diode Fast Switching Diode Features D Silicon Epitaxial Planar Diodes D Electrical data identical with the device 1N4151 D Micro Melf package Applications 96 12315 Extreme fast switches Order Instruction Type MCL4151

BAW27

Contextual Info: BAW27 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Order Instruction

Contextual Info: 1N4150 Vishay Telefunken Fast Switching Diode Features D Silicon Epitaxial Planar Diode D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Order Instruction

BB824

Contextual Info: BB824 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Order Instruction Type

BAY135

Contextual Info: BAY135 Vishay Telefunken Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks

for 2N3904

Abstract: transistor a 1944 SMB3904 TRANSISTOR k 1254 TRANSISTOR noise figure measurements CMPT3904 MMBT3904 SST3904 mmbt3904 motorola transistor temperature sensor motorola
Contextual Info: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: temperature, thermometer, diode, thermistor, thermister, ADC, die temp, temp, system monitor, diode sensor, analog to digital converter Mar 21, 2003

Contextual Info: BAT54/A/C/S Vishay Telefunken Small Signal Schottky Barrier Diode Features D Low Turn–on Voltage D Fast Switching D PN Junction Guard Ring for Transient and ESD Protection 94 8550 Order Instruction Type BAT54 BAT54A BAT54C BAT54S Type Differentiation VR = 30 V, Single Diode

Contextual Info: BB804 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Order Instruction Type BB804 BB804–0

BB804

Abstract: 43- diode CD38P
Contextual Info: BB804 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Order Instruction Type BB804 BB804–0

Contextual Info: BB814 Vishay Telefunken Dual Varicap Diode Features D Silicon Epitaxial Planar Diode D Common cathode Applications Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550 Order Instruction Type BB814–1 BB814–2

TSML3710-GS08

Contextual Info: TSML3710 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage

Contextual Info: UCC27223 SLUS558 − DECEMBER 2003 HIGHĆEFFICIENCY PREDICTIVE SYNCHRONOUS BUCK DRIVER WITH ENABLE APPLICATIONS D Multiphase Converters in Combination With FEATURES D Maximizes Efficiency by Minimizing D D D D D D D D Body-Diode Conduction and Reverse Recovery Losses

BUF725D

Abstract: ic 8853 transistor BUF725D BUF725
Contextual Info: BUF725D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D D Monolithic integrated C–E–free–wheeling diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

NTE6111

Abstract: NTE6114 RF2TJ
Contextual Info: NTE6111 & NTE6114 Silicon Power Rectifier Diode, 1100 Amp Features: D Wide Current Range D High Voltage Rating D High Surge Current Capabilities Applications: D Converters D Power Supplies D Machine Tool Controls D High Power Drives D Medium Traction Applications

fr diode 205

Abstract: diode fr 207 TFK 450 B2 41880 A751
Contextual Info: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “

4070N

Contextual Info: b2E D • b427525 0G37bb4 TÔT « N E C E N E C PHOTO DIODE ELECTRONICS INC / N D L5406C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS 2 7 0 X 3 3 0 jum InGaAs PIN PHOTO DIODE D E S C R IP TIO N N D L 5 4 0 6 C is a 270 nm x 3 3 0 /¿m InGaAs PIN p h o to diode fo r a lig h t detector. It covers th e wavelength range between

thyristor BBC

Abstract: thyristor BBC CS 0,6 thyristor BBC CS BROWN BOVERI protection kippdiode bbc cs 23 thyristor
Contextual Info: BBC BROWN BOVERI Breakover Diode BOD 1 -0 4 BOD 1-42 R Druckschrift/Publication No. C H -E 3.40515.1 D/E/F Ausgabe/Edition September/Septembre 1985 VBo ' 400.4200 V Kippdiode: BOD Breakover Diode: BOD Diode de retournement: BOD M erkm ale Features Particularités

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V

tp 312 transistor

Contextual Info: BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D D Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses

ir 9911

Abstract: TE13004D TE13005D
Contextual Info: TE13004D • TE13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planarpassivation Very short switching times Very low switching losses Very low dynamic saturation