DIODE D 07-15 15 Search Results

SOT 23 A7 diode

Abstract: A4 marking diode diode a7 marking A7 diode diode marking a4 Diode Diode BAV99 SOT23 A7 diode A7 sot-23 single DIODE DOUBLE FAST DIODE
Contextual Info: 15 PLESSEY SENICOND/DISCRETE DE | 7 5 E 0 S 3 3 QDG5D23 1 7220533 PLE SS E Y S E M I C O N D /D ISCRETE 95 D 0 5 0 2 3 I T'Oi- 07 SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES I i | : \ The B A V and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs

Contextual Info: EQA01-17R Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage17 @I(Z) (A) (Test Condition)10m Tolerance (%)10 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.15 Temp Coef pp/10k.07 Maximum Operating Temp (øC)125õ

1ss239

Contextual Info: b7 T O S H I B A -CDISCRETE/OPTOï ^1^0^7250 9097250 TOSHIBA DISCRETE/OPTO GD0T343 h 67C 0 9 3 4 3 D T - 0 7 <07 - 1SS239 Silicon Epitaxial Schottky Barrier Type Diode Unit in mm CATV/UHF/VHF MIXER APPLICATIONS. + Û25 L 5-Û 15 J - Nrt öd +l Q6 5 Q 6±ai

Laser microphone

Abstract: OD-8303 OD-83Q3 OD-9470 JA3P
Contextual Info: N E C E L E CT RONI CS INC 5= J> b 4 27 52 S 0 00 55 15 h HNECE T-41-07 NEC Fiber Optic Devices OD-8303- D LD Module OD-8303 is designed to couple LD Laser Diode) output light to optical fiber through connector. PIN photodiode is installed in OD-8303 for APC (Automatic Power Control) and moni­

Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

C67078-S1454-A2

Contextual Info: BUZ 272 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 272 -100 V -15 A 0.3 Ω TO-220 AB C67078-S1454-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: VCE IC = = 1200 V 800 A ABB HiPakTM IGBT Module 5SND 0800M120100 Doc. No. 5SYA 1594-00 May 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

BUZ 20

Abstract: C67078-S3127-A2 BUZ323
Contextual Info: BUZ 323 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 323 400 V 15 A 0.3 Ω TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Continuous drain current

L500H

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

5SNA1000G450300

Abstract: cosmi 5SNA 1000G450300
Contextual Info: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: Bulletin I27307 01/07 GB20RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 21A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

5SNA-1500E330300

Abstract: igbt 3 KA res 301 ohm 1 1w
Contextual Info: VCE IC = = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 Doc. No. 5SYA 1595-00 July 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: Bulletin I27309 01/07 GB50RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 48A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: QRD4518001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Diode Isolated Module 180 Amperes/4500 Volts S NUTS (3TYP) A D F F B E C N M 1 2 3 V (4TYP) G (3TYP) R (DEEP) Description: Powerex Dual Diode Modules are

Contextual Info: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft

fus20

Abstract: abb hipak 5SYA2039 igbt 3 KA c2120 c1840 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-01 Jun 07 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

Contextual Info: Bulletin I27300 01/07 GB20XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 21A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin PD-21067 07/05 15ETL06SPbF 15ETL06-1PbF Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC Features • • • • • VF = 0.99V typ. IF AV = 15Amp VR = 600V Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current

Contextual Info: Bulletin I27302 01/07 GB50XF60K IGBT SIXPACK MODULE VCES = 600V Features IC = 48A @ TC=80°C • Low VCE on Non Punch Through IGBT Technology • Low Diode VF tsc > 10 s @ TJ=150°C • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27299 01/07 GB30XF60K IGBT SIXPACK MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 35A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ=150°C • HEXFRED Antiparallel Diode with Ultrasoft

CD42

Abstract: CD421660 CD47
Contextual Info: CD42_60 CD47_60 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING A C F G Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated

Contextual Info: Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter R07DS0176EJ0400 Rev.4.00 Dec 07, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)