DIODE CURRENT 1200A Search Results

Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current

APT0502

Abstract: APT0601
Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 VCES = 1200V IC = 475A @ Tc = 100°C EK E C G CK Application • Zero Current Switching resonant mode Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current

Contextual Info: APTGL475U120DAG Single switch with Series diode Trench + Field Stop IGBT4 EK E C G CK VCES = 1200V IC = 475A @ Tc = 100°C Application • Zero Current Switching resonant mode Features  Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current

1200JXH23

Contextual Info: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • 2 - ¿3.5 ± 0.2 depth 2.1 ±0.4 Repetitive Peak Reverse Voltage : V rrm —6000V Average Forward Current : Ijr AV = 1200A

Contextual Info: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1200JXH23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V rrm = 6000V Average Forward Current : Ijr AV = 1200A Double Side Cooling M A X IM U M RATING

toshiba gto

Contextual Info: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling

toshiba gto

Contextual Info: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS

Contextual Info: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS

8k83

Abstract: diode 6.L
Contextual Info: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features                 <  =  4

TFC561D

Contextual Info: TO-220S Thyristor with built-in reverse diode for HID lamp ignition TFC561D • Features External Dimensions Unit: mm 10.2± 0.3 4.44± 0.2 (1.4) ●Repetitive peak off-state voltage: VDRM=600V 1.3± 0.2 11.3± 0.5 ●Critical rate-of-rise of on-state current: di/dt=1200A /µs

Contextual Info: TOSHIBA TENTATIVE 1200JXH23 TOSHIBA FAST RECOVERY DIODE 1 2 Q Q J SILICON DIFFUSED TYPE X H 2 3 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 5 ± 0.2 • • • Repetitive Peak Reverse Voltage : V r r m = 6000V Average Forward Current : Ip AV = 1200A Double Side Cooling

TFC561D

Abstract: TO-220S
Contextual Info: TO-220S Thyristor with built-in reverse diode for HID lamp ignition TFC561D • Features External Dimensions Unit: mm 10.2± 0.3 4.44± 0.2 (1.4) ●Repetitive peak off-state voltage: VDRM=600V 1.3± 0.2 11.3± 0.5 ●Critical rate-of-rise of on-state current: di/dt=1200A /µs

Contextual Info: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp, DO5 Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a

NTE5930

Abstract: NTE5931 NTE59
Contextual Info: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a

Contextual Info: Thyristor with built-in reverse diode for HID lamp ignition TFC561D External Dimensions unit: mm 4.44±0.2 (1.4) 1.3±0.2 11.3±0.5 8.6±0.3 10.2±0.3 +0.3 ● Repetitive peak off-state voltage: VDRM=600V ● Repetitive peak surge on-state current: ITRM=430A

Contextual Info: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK S VDSS = 1000V RDSon = 45m typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application S D G DK S Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK S D G DK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application • Zero Current Switching resonant mode Features  Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

APT0502

Abstract: APT0601 APTM100UM45DAG
Contextual Info: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200HE-66S ● IF . 1200A ● VRRM . 3300V

rm1200h

Abstract: rm1200he-66s
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200HE-66S ● IF . 1200A ● VRRM . 3300V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DB-66S ● IF . 1200A ● VRRM . 3300V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-34S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DB-34S ● IF . 1200A ● VRRM . 1700V

RM1200DG

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DG-66S ● IF . 1200A ● VRRM . 3300V