DIODE CODE YW Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

mosfet vth 5v

Abstract: Dual N-Channel MOSFET sot-363 n-channel mosfet SSN2N7002C Dual Enhancement Mode MOSFET
Contextual Info: SSN2N7002C Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) SOT-363 RDS(ON) (Ω) Max 6 3.0 @VGS = 10V 0.120A 1 Product Summary (P-Channel) ID (A) -60V -0.130A 4 YW 4.0 @VGS = 4.5V VDS (V) 5 2C 60V ID (A) 2 3 RDS(ON) (Ω) Max D1 (6) 7.5 @VGS = 10V

8205 sot-23-6

Abstract: Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205
Contextual Info: SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 05 YW 25 @VGS = 4.5V 5A 18V 82 VDS (V) TSOP-6 (SOT-23-6) 1 45 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.

marking 8206

Abstract: RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2
Contextual Info: SSS8206 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 06 YW 20 @VGS = 4.5V 5.5A 16V 82 VDS (V) TSOP-6 (SOT-23-6) 1 35 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.

Dual N-Channel mosfet sot-363

Abstract: diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET
Contextual Info: SSN1902 Dual N-Channel Enhancement Mode MOSFET Product Summary SOT-363 6 RDS ON (mΩ) Max ID (A) 4 YW 385 @VGS = 4.5V 1 0.7A 20V 5 19 VDS (V) 2 630 @VGS = 2.5V 3 D1 (6) D2 (3) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.

tjm sot23

Abstract: sss0610
Contextual Info: SSS0610 P-Channel Enhancement Mode MOSFET Product Summary ID A -60V -0.185A RDS(ON) ( ) Max 10 06 VDS (V) SOT-23 D YW 7.5 @VGS = 10V G 10.0 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. Pb Free.

F0D2741

Abstract: QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139
Contextual Info: 1655 Scott Blvd Santa Clara, CA 95050-4169 408 985-2400 FAX No. (408) 296-3256 Underwriters Laboratories Inc. File E90700 Issusd Revised Vol 11/17/1998 10/30/2001 FOLLOW-UP SERVICE PROCEDURE (TYPE R) COMPONENT Manufacturer : (621133-001) Applicant : (725625-001)

LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

Abstract: freewheeling diode 5A
Contextual Info: SDB1090DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode

Contextual Info: SDB10150DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current 1 2, 4  Low power loss and High efficiency  High surge capability 3  Dual common cathode rectifier Pin Configuration

SDB10150DI

Abstract: 5A schottky
Contextual Info: SDB10150DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode

freewheeling diode 5A

Abstract: marking code 52 diode
Contextual Info: SDB1090DI Semiconductor Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features 2  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability 1  Dual common cathode rectifier 123  Full lead Pb -free and RoHS compliant device

252 DIODE

Contextual Info: SDB10100DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode

SDB10200

Abstract: sdb10200di
Contextual Info: SDB10200DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode

60V 60A TO-252

Abstract: Schottky rectifier 3A 60v
Contextual Info: SDB1060DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode

Contextual Info: SDB20100DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier Pin Configuration Pin 1, 3: Anode

sot-89 marking ct

Contextual Info: Advanced Power Electronics Corp. APE2903 MICROPOWER VFM STEP-UP DC/DC CONVERTER FEATURES DESCRIPTION Very Low Supply Current Regulated Output Voltage Wide Range of Output Voltage is Available from 2.2V to 5.0V by 0.1V Steps Output Voltage Accuracy ±5% Output Current up to 100mA

sot-89 marking Y5

Abstract: marking code to3 diode diode td3 APE2903Y5-3 4 SOT-89
Contextual Info: Advanced Power Electronics Corp. APE2903 Preliminary MICROPOWER VFM STEP-UP DC/DC CONVERTER FEATURES DESCRIPTION Very Low Supply Current Regulated Output Voltage Wide Range of Output Voltage is Available from 2.2V to 5.0V by 0.1V Steps Output Voltage Accuracy ±5%

Contextual Info: Advanced Power Electronics Corp. APE2903 MICROPOWER VFM STEP-UP DC/DC CONVERTER FEATURES DESCRIPTION Very Low Supply Current Regulated Output Voltage Wide Range of Output Voltage is Available from 2.2V to 5.0V by 0.1V Steps Output Voltage Accuracy ±5% Output Current up to 100mA

Contextual Info: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability

Contextual Info: TSF30H120C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and