DIODE CODE T2 Search Results

diode sod-123 marking code 120

Abstract: diode sod-123 marking code t2 BA 141 diode
Contextual Info: BAV19W-BAV21W SOD-123 Plastic-Encapsulate Diodes SOD-123 FAST SWITCHING DIODE FEATURES MARKING: BAV19W: A8 BAV20W: T2 BA 2 W T3 BAV21W: Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0101 Rev.1.01 Nov 01, 2012 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

silicon carbide diode

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

Contextual Info: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

rohm package code

Abstract: T106 T108 T110 T116 T146 T148 TE-17 diode T-77 TE61
Contextual Info: Part No. Explanation Taping Code Surface Mount Type When ordering, specify the part number. Check each code against the tables shown below. Fill in from the left, leaving any extra boxes empty on the right. Small signal / rectifier diode Example: 1 S S 3 5 5

Q62702-B695

Abstract: 639C
Contextual Info: BB 639C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners Type Marking Ordering Code Pin Configuration Package BB 639C yellow S Q62702-B695 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: SIEMENS BBY52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • D esigned for low tuning voltage operation • For V C O 's in mobile com m unications equipment Type Marking Ordering Code Pin Configuration BBY52 S 5s Q62702-B632 1 =A1 Package

SHINDENGEN sir 20

Contextual Info: U tipe Super Fast Recovery Diode Axial Diode Mmrtfem S2L20U OUTLINE DIMENSIONS G a s e : 1.C 26.5 ±l 2 Q 0 V 7 "'’o5 s 26.5 t2 f 4.4 - 1 .5 A 1* l i l l ° - •trr3 5 n s T I Cathode (2 ) ! Anode « Ê 9 J(* 0 ^ Color code (Red) s s s s b ib s im ih

DIODE T25 4 do

Abstract: bb409 DIODE T25 4 DIODE T25 DIODE 409 Q62702-B112 IR 409 H DIODE T25 4 C
Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 409 • For VHF tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BB 409 green Q62702-B112 DO-35 DHD o - ^ -o EHA07001 Maximum Ratings Parameter Symbol