DIODE CODE B3X Search Results

GENERAL SEMICONDUCTOR DIODE SMC 400

Abstract: CD214C-B340
Contextual Info: PL IA N T Features M • RoHS compliant* *R oH S CO ■ SMC package ■ Surface mount ■ High current capability CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

DIODE B320B

Abstract: B340Q b360
Contextual Info: B320 - B360 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B320/B330/B340 VRRM V 20/30/40 B350/B360 VRRM (V) 50/60 IO (A) 3.0 IO (A) 3.0 VF max (V) 0.5 IR max (mA) 0.5 VF max (V) 0.7 • Guard Ring Die Construction for Transient Protection

Contextual Info: SiA459EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a 0.0350 at VGS = - 4.5 V -9 - 20 0.0395 at VGS = - 3.7 V -9 0.0620 at VGS = - 2.5 V -9 Qg (Typ.) 10 nC PowerPAK SC-70-6L-Single

Si3433BDV

Abstract: Si3433BDV-T1-E3 Si3433BDV-T1
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

Si3495DV

Contextual Info: Si3495DV New Product Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested ID (A) 0.024 @ VGS = −4.5 V −7 0.030 @ VGS = −2.5 V

Si3433BDV

Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

Contextual Info: Si3499DV New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.023 @ VGS = −4.5 V −7 0.029 @ VGS = −2.5 V −6.2 0.036 @ VGS = −1.8 V −5.2 0.048 @ VGS = −1.5 V −5.0 D TrenchFETr Power MOSFET: 1.5-V Rated

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

Si3499DV

Contextual Info: Si3499DV New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.023 @ VGS = −4.5 V −7 0.029 @ VGS = −2.5 V −6.2 0.036 @ VGS = −1.8 V −5.2 0.048 @ VGS = −1.5 V −5.0 D TrenchFETr Power MOSFET: 1.5-V Rated

SI3495DV

Contextual Info: Si3495DV New Product Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 D TrenchFETr Power MOSFET: 1.5-V Rated D Ultra-Low On-Resistance D 100% Rg Tested ID (A) 0.024 @ VGS = −4.5 V −7 0.030 @ VGS = −2.5 V

Si3499DV

Contextual Info: Si3499DV New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.023 @ VGS = −4.5 V −7 0.029 @ VGS = −2.5 V −6.2 0.036 @ VGS = −1.8 V −5.2 0.048 @ VGS = −1.5 V −5.0 D TrenchFETr Power MOSFET: 1.5-V Rated

Si3433BDV

Abstract: Si3433BDV-T1-E3 Si3433BDV-T1-GE3
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition

700S-CF440DJC

Abstract: IEC 947 EN 60947 NEMA P600 allen-bradley safety relay b3y diode MSR9T Diode B2x 700S-CF440 MARKING c1y E14840
Contextual Info: Bulletin 700S-CF Bulletin 700S-P Safety Control Relays–The Safe Solution Safety Control Relays Product Profile Designed To Meet Worldwide Safety Standards Bulletin 700S-CF Bulletin 700S-P Rockwell Automation introduces a new category of relays designed to meet the latest and emerging worldwide safety

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS340T3G

Abstract: MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

K2313

Contextual Info: AUGUST’14 ® FINEMET ® is a registered trademark of Hitachi Metals, Ltd. As IT and electronic devices become small and improve its performance, issues of electromagnetic noise are addressed. EMC regulations for those

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY MBRS340T3G b34 diodes on semiconductor marking B33 diode b34 DIODE schottky marking B3X Diode 145 B34 marking B32
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

SI3433BDV-T1

Abstract: SI3433BDV
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay