DIODE CODE 10 Search Results

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RPM SHIFT LIGHT

Abstract: SSI encoder 360 degrees AEAS-7000 AEAS-7500 AEAS-7500-1GSG0 rotary encoder signal conditioning 1000RPM
Contextual Info: AEAS - 7500 Ultra-Precision 16 bit Gray Code Absolute Encoder Module Data Sheet Description The encoder IC consists of 13 signal photo diode channels and 1 monitor photo diode channel and is used for the optical reading of rotary or linear code carriers i.e. discs or

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

diode 4148

Abstract: DIODE-4148 A4 marking diode diode MARKING CODE 5d marking A4 marking A7 marking codes sot-23 A4 4148CA 4148SE diode 4148 sot-23
Contextual Info: MMBD4148 / SE / CC / CA SURFACE MOUNT SWITCHING DIODE 4148 4148SE 3 1 4148CC 3 3 2 1 1 2 2 4148CA 3 1 MMBD4148 Marking Code: 5D MMBD4148SE Marking Code: A7 MMBD4148CC Marking Code: A4 MMBD4148CA Marking Code: A1 SOT-23 Plastic Package 2 Absolute Maximum Ratings Ta = 25 OC

schottky diode sod-123 marking code 120

Abstract: marking code diode 14 1N5819WB diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 1N5817WB 1N5818WB diode marking 14
Contextual Info: 1N5817WB-1N5819WB 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Marking: 1N5817WB Marking Code: A0 1N5818WB Marking Code: ME 1N5819WB Marking Code: SR Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25OC

KSD301

Abstract: KSD-301 3015000 SDP530WMUF ksd3015000
Contextual Info: SDP530WMUF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WMU W3M SOT-323F

transistor marking w3k

Abstract: SDP530WAF SDP530WKF ksd2093
Contextual Info: SDP530WKF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WAF W3K SOT-23F

IC 2073

Abstract: SDP530WMF KSD-2073-000 ksd2073
Contextual Info: SDP530WMF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WMF W3M SOT-23F

IC 2073

Abstract: ksd2073 KSD-2073-000 SDP530WM SDP530WMF ksd 190
Contextual Info: SDP530WMF Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530WM W3M SOT-23F

Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration BAR 65-02W

c014 DATASHEET

Abstract: transistor c014 c014 SDP530D KSD-C014-000 marking w3 diode pin diode attenuator uhf Marking W3
Contextual Info: SDP530D Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530D W3 SOD-323 unit : mm

diode 1500V

Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

diode marking e41

Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

SDP530Q

Contextual Info: SDP530Q Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530Q W3 SOD-523 unit : mm