DIODE CATALOG Search Results
DIODE CATALOG Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
|
Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
|
Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
|
Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
|
Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
|
Zener Diode, 16 V, USC | Datasheet |
DIODE CATALOG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SVC341
Abstract: EN2618B 4550L
|
Original |
EN2618B SVC341 SVC341-applied SVC341 SVC341] EN2618B 4550L | |
|
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and |
Original |
NNCD36ST IEC61000-4-2 SC-70) NNCD18ST NNCD36ST | |
svc251Contextual Info: Ordering number: EN 774E No.774E i SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL VCO cicuitry. |
OCR Scan |
SVC251SPA SVC251SPA 50MHz svc251 | |
|
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise. |
Original |
IEC61000-4-2 SC-76) | |
699hContextual Info: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of |
OCR Scan |
SVC321SPA SVC321SPA 10juA V153-0 699h | |
SANYO DC 303
Abstract: 2SD1623 FP303 SB05-05CP MARKING 303
|
Original |
EN4657 FP303 FP303 2SD1623 SB05-05CP, FP303] SANYO DC 303 SB05-05CP MARKING 303 | |
fp104Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package, |
Original |
EN4655 FP104 FP104 2SA1729 SB05-05CP FP104] | |
EN4539
Abstract: 2SD1621 FP301 SB07-03C 45393 marking 301
|
Original |
EN4539 FP301 FP301 2SD1621 SB07-03C FP301] EN4539 45393 marking 301 | |
FP-108-1
Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
|
Original |
EN5100 FP108 FP108 2SB1121 SB01015CP, FP108] FP-108-1 1.5A COMMON CATHODE 2088a TA0316 | |
marking 105
Abstract: 2SB1123 FP105 2088a
|
Original |
EN4656 FP105 FP105 2SB1123 SB0505CP, FP105] marking 105 2088a | |
|
Contextual Info: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be |
Original |
EN2819D SVC351 1194B SVC351] | |
d2095
Abstract: marking VB SVC345 varactor diode AM
|
Original |
EN5346 SVC345 SVC345 SVC345] d2095 marking VB varactor diode AM | |
|
Contextual Info: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one |
Original |
EN4658 FC601 FC601 SB007-03CP RA104C FC601] | |
|
Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation. |
Original |
RD1006LS-SB5 ENA1608 A1608-3/3 | |
|
|
|||
|
Contextual Info: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation. |
Original |
RD0506LS-SB5 ENA1611 A1611-3/3 | |
MCH3312
Abstract: CPH5854 SB1003M3 A05166 marking YG
|
Original |
CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG | |
|
Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1 |
Original |
NNCD18DT NNCD36DT NNCD36DT IEC61000-4-2 SC-76) | |
|
Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features |
Original |
SIM-22ST SIM-22ST R1010A | |
EN5534
Abstract: AN 5534 SVC233 marking SV 1169A-CP
|
Original |
EN5534 SVC233 169A-CP SVC233-applied SVC233 SVC233] EN5534 AN 5534 marking SV 1169A-CP | |
kt 501
Abstract: SVC201SPA SVC201Y "FM receiver"
|
Original |
EN501H SVC201SPA, SVC201SPA] SVC201Y] kt 501 SVC201SPA SVC201Y "FM receiver" | |
|
Contextual Info: UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time |
Original |
UC1611 UC3611 SLUS338A | |
|
Contextual Info: QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U33 combines Pch MOSFET with a Schottky barrier diode in TSMT5 package. |
Original |
QS5U33 QS5U33 | |
SVC252
Abstract: AFC marking marking HV
|
Original |
EN4629A SVC252 SVC252 SVC252-applied SVC252] AFC marking marking HV | |
CPH5862Contextual Info: CPH5862 Ordering number : ENA0464 SANYO Semiconductors DATA SHEET CPH5862 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter applications. Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package |
Original |
CPH5862 ENA0464 A0464-5/5 CPH5862 | |