DIODE CATALOG Search Results

SVC341

Abstract: EN2618B 4550L
Contextual Info: Ordering number :EN2618B SVC341 Diffused Junction Type Sillicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8ST to NNCD36ST ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR CAN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION These products are the ESD (Electrostatic Discharge) Noise 0.3 +0.1 −0 Clipping Diode that is designed to protect from both positive and

svc251

Contextual Info: Ordering number: EN 774E No.774E i SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL VCO cicuitry.

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD7.5MDT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION This product is the ESD (Electrostatic Discharge) Noise Clipping 0.3±0.05 1.25±0.1 2.5±0.15 Diode that is designed to protect from both positive and negative noise.

699h

Contextual Info: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of

SANYO DC 303

Abstract: 2SD1623 FP303 SB05-05CP MARKING 303
Contextual Info: Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.

fp104

Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,

EN4539

Abstract: 2SD1621 FP301 SB07-03C 45393 marking 301
Contextual Info: Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2 devices NPN transistor and Schottoky barrier diode contained in one package,

FP-108-1

Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
Contextual Info: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

marking 105

Abstract: 2SB1123 FP105 2088a
Contextual Info: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating

Contextual Info: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be

d2095

Abstract: marking VB SVC345 varactor diode AM
Contextual Info: Ordering number :EN5346 SVC345 Silicon Diffused Junction Type Varactor Diode for AM Low-Voltage Electronic Tuning Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning applications. · Low operating voltage ≤6.5V .

Contextual Info: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one

Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

Contextual Info: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

Contextual Info: DATA SHEET ESD NOISE CLIPPING DIODE NNCD18DT to NNCD36DT ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE FOR LIN BUS APPLICATION PACKAGE DRAWING Unit: mm DESCRIPTION 2.5±0.15 NNCD18DT and NNCD36DT are suitable for ESD protection of LIN 1.7±0.1 0.3±0.05 1.25±0.1

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features

EN5534

Abstract: AN 5534 SVC233 marking SV 1169A-CP
Contextual Info: Ordering number : EN5534 Silicon Diffused Junction Type SVC233 Varactor Diode for FM Band Pager Features Package Dimensions • Low Voltage 4.5V . unit: mm • Twin type varactor diode device for FM band pagers 1169A-CP because of excellent large-signal input characteristics.

kt 501

Abstract: SVC201SPA SVC201Y "FM receiver"
Contextual Info: Ordering number :EN501H SVC201SPA, 201Y Duffused Junctions Type Sillicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions • The SVC201SPA, 201Y are varactor diodes of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in FM

Contextual Info: UC1611 UC3611 SLUS338A – JUNE 1993 – REVISED MAY 2001 QUAD SCHOTTKY DIODE ARRAY FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time

Contextual Info: QS5U33 Transistor 4V Drive Pch+SBD MOSFET QS5U33 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U33 combines Pch MOSFET with a Schottky barrier diode in TSMT5 package.

SVC252

Abstract: AFC marking marking HV
Contextual Info: Ordering number :EN4629A SVC252 Silicon Diffused Junction Type Varactor Diode for AFC, CB PLL Features Package Dimensions • The SVC252 is a varactor diode designed for use in AFC and CB PLL’s VCO. · High Q. · High capacitance ratio. · Compact packaging supports more compact and

CPH5862

Contextual Info: CPH5862 Ordering number : ENA0464 SANYO Semiconductors DATA SHEET CPH5862 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter applications. Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package