DIODE C48 Search Results

transistor c114

Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Contextual Info: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC

MAX2550

Abstract: CMHD4448 diode c48 diode sod-123 Ir 150 diode marking r5
Contextual Info: CMHD4448 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SOD-123 surface mount

CMHD4448

Abstract: diode c48
Contextual Info: CMHD4448 Central TM Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SOD-123 surface mount package, designed for high speed switching

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

EVLD02

Abstract: 13DAH003 4,7uF 50v IXLD02 Melles Griot Laser Diode driver SPLPL90 spl pl90 0 diode laser power supply melles griot 10UF 2N7002
Contextual Info: DIRECTED ENERGY, INC. TECHNICAL NOTE EVLD02 Evaluation Board For The IXLD02 Ultra High Speed Laser Diode Driver IC Introduction The IXLD02 laser diode driver is designed to drive single junction laser diodes in a differential fashion. This technique provides the highest possible slew rate across the

Contextual Info: CMHD4448 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a

CMHD4448

Abstract: MARKING CODE R7 MARKING CODE R7 DIODE marking R7 diode
Contextual Info: CMHD4448 SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS30R06W1E3 EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC C2 *36A436+61234286544

Contextual Info: 10 D L2 C48 A, 10 FL2 C48A, U10 D L2 C48 A, U10 FL2 C48A TO SHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. •

diode t 5d

Abstract: tim 5f diode 5d MARKING 5D DIODE 5dl2c
Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

l2c48

Contextual Info: TOSHIBA 5D L2 C48A, 5F L2 C48A, U 5D L2 C48A, U 5FL2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Rep etitive P e a k Reverse Voltage

C1083

Abstract: a2098 thomson image intensifier C1083-01 A7703 transistor a2098 V3346U-24 V3346U-04 c1097 C1097-04
Contextual Info: High Dynamic Range Streak Camera C7700 Less than 60 ps 10 000 :1 ▲ The relaxation oscillation of a laser diode can be measured with the C7700 under single shot operation. The data was captured with a C4880-21 readout CCD camera. The C7700 is a newly developed high dynamic range

BAE Systems

Abstract: 180J 5DL2C48A 5FL2C48A U5DL2C48A U5FL2C48A
Contextual Info: TO SH IBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage

5DL2C48A

Abstract: 5FL2C48A U5DL2C48A U5FL2C48A
Contextual Info: TO SHIBA 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Repetitive Peak Reverse Voltage

PTD5061-5XXX

Abstract: 160km HI-TECH c18 neophotonics 1000BASE-LX G957 IEC825 BLD 128 D
Contextual Info: www.neophotonics.com VER000/ 051308 PTD5061-5XXX + 2.5Gbps DWDM SFP Transceiver 1 1.1 Features Transceiver unit with independent DWDM DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with DWDM SFP MSA 1.3 Compliant with SFP MSA with duplex LC receptacle

Contextual Info: OPTIONS ● Delay ● PIN unit C1097-05 This passive delay unit provides convenient timing adjustment with zero jitter. Variable delay range Delay setting range photo diode C1083-01 Converts low-repetition light pulses to an electronic trigger for streak sweep.

Contextual Info: International [^Rectifier Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT VCes = 1200V • Short circuit rated -10ps @ 12 5 °C , V GE = 15V • Switching-loss rating includes all "tail" losses

IRGPH40MD2

Abstract: 930 18a C479
Contextual Info: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGPH40MD2

Contextual Info: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

diode 500v 10A

Contextual Info: [p[^@ y gTr ättä[l©( C o n tr a n HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED DARLINGTON WITH STABILIZING RESISTORS AND INTEGRATED BY-PASS DIODE CHIP N UM BER ¿Ti CONTACT METALLIZATION Base and emitter: > 30.000 A Aluminum Collector: Gold

Contextual Info: CMLD4448 SURFACE MOUNT SILICON DUAL, ISOLATED HIGH SPEED SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD4448 type contains two 2 isolated silicon switching diodes, manufactured by the epitaxial planar process, epoxy

1838t

Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

z0b07

Abstract: Z4618 z4843
Contextual Info: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 SERIES Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses