DIODE C25 Search Results

c18v

Abstract: C10V C25V SVC333 AM receiver 4084
Contextual Info: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode

C10V

Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Contextual Info: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode

C25V

Abstract: KDV300E VR1060
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV300E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. TENTATIVE FEATURES High Capacitance Ratio : C2V/C25V=14.5 Min. Low Series Resistance : rs=1.1 (Max.) MAXIMUM RATING (Ta=25 CHARACTERISTIC A 1 ) SYMBOL

KDV215

Contextual Info: SEMICONDUCTOR KDV215 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES ・High Capacitance Ratio : C2V/C25V=6.5 Typ. ・Low Series Resistance : rS=0.4Ω(Typ.) ・Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES ・High Capacitance Ratio : C2V/C25V=12.5 Typ. ・Low Series Resistance : rS=0.6Ω(Typ.) ・Excellent C-V Characteristics, and Small Tracking Error.

diode c25

Abstract: 1T378A
Contextual Info: 1T378A Variable Capacitance Diode Description The 1T378A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners, and the super miniature package allows the tuner miniaturization. High capacitance ratio C25/C28 is improved to

SVC333

Abstract: C25V Ne935-2 ACM 944 1096-11 c30 diode
Contextual Info: Ordering number : EN935B _ S VC 33 3 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode works at high tuning voltage and has the high Q and the sufficiently high capacitance ratio and

Contextual Info: SEMICONDUCTOR KDV310E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. ・Low Series Resistance : rs=1.1Ω Max. ・Small Package : ESC. E C 1 A ・High Capacitance Ratio : C2V/C25V=17.0(Min.) B CATHODE MARK FEATURES 2 D

BA 516 diode

Contextual Info: SEMICONDUCTOR KDV316E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. ・Low Series Resistance : rs=2.2Ω Max. ・Small Package : ESC. E C 1 A ・High Capacitance Ratio : C1V/C25V=9.0(Min.) B CATHODE MARK FEATURES 2 D

C25V

Contextual Info: KDV269V SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CATV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=11.0 Min. Low Series Resistance : rS=0.75 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV269 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. L K H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.75 Max. 1 E High Capacitance Ratio : C2V/C25V=11.0(Min.)

C25V

Contextual Info: SEMICONDUCTOR KDV214V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3 Min. Low Series Resistance : rS=0.57 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEM ICONDUCTOR KDV214 TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.

C25 diode

Abstract: 1T405A diode c25
Contextual Info: 1T405A Variable Capacitance Diode Description The 1T405A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package SSVC . High capacitance ratio (C25/C28) is improved to support guard band.

C25V

Contextual Info: SEMICONDUCTOR KDV214VA TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=6.3 Min. Low Series Resistance : rS=0.57 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.

C 12 PH diode

Abstract: C25V KDV214E diode C 12 PH
Contextual Info: KDV214E SEMICONDUCTOR TECHNICAL DA TA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES • • • • High Capacitance Ratio : C2V/C25V=6.5 Typ. Low Series Resistance : rs=0.4£! (Typ.) Excellent C -V Characteristics, and Small Tracking Error.

1T397

Abstract: M235 E94610-TE
Contextual Info: 1T397 Variable Capacitance Diode Description The 1T397 is a variable capacitance diode designed for the electronic tuning of wide band CATV tuners, and it has a super miniature package. Features • Super miniature package • Large capacitance ratio C2/C25=14.5Min.

Contextual Info: SEM ICONDUCTOR KDV214A TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. y FEATURES • High Capacitance Ratio : C2V/C25V=6.3 Min. • Low Series Resistance : rs=0.57Q(Max.) • Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV214 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Max. L K H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.57 1 E High Capacitance Ratio : C2V/C25V=6.3(Min.)

C25V

Abstract: KDV262 TA5 marking
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. L K H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.6 Typ. 1 E High Capacitance Ratio : C2V/C25V=12.5(Typ.)

Contextual Info: SEMICONDUCTOR KDV262 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. K L H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.6 Typ. 1 E High Capacitance Ratio : C2V/C25V=12.5(Typ.)

Contextual Info: SEMICONDUCTOR KDV214V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=6.3 Min. ・Low Series Resistance : rS=0.57Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: KDV269 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CATV TUNING. K L H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.75Ω Max. 1 E ・High Capacitance Ratio : C2V/C25V=11.0(Min.)

KDV214A

Abstract: C25V
Contextual Info: SEMICONDUCTOR KDV214A TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. L K H F ・Excellent C-V Characteristics, and Small Tracking Error. A ・Low Series Resistance : rS=0.57Ω Max. 1 E ・High Capacitance Ratio : C2V/C25V=6.3(Min.)