DIODE C06 Search Results
DIODE C06 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE C06 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CD621215Contextual Info: CD62_ _15 CD67_15_ Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 150 Amperes/1600 Volts Description: CD62 15, CD67 15 SCR/Diode POW-R-BLOK™ Module 150 Amperes/1600 Volts Powerex SCR/Diode Modules are |
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amperes/1600max/10cd621215 | |
DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
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fs300r17ke3cbb32cbb326223db+6 | |
2NU diode
Abstract: LTC4098-3.6 DIODE C06-15
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bsm400ga120dlc36134b661fa32652nu diode+2 | |
MO-193-CContextual Info: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A) |
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si3812dv2002/95/ecsi3812dv-t1-ge311-mar-11+1 | |
si3812Contextual Info: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A) |
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si3812dv2002/95/ecsi3812dv-t1-ge32011/65/eu+2 | |
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Contextual Info: Si3812DV Vishay Siliconix N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.125 at VGS = 4.5 V 2.4 0.200 at VGS = 2.5 V 1.8 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A) |
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si3812dv2002/95/ecsi3812dv-t1-ge32011/65/eu+2 | |
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Contextual Info: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 |
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si4830adysi4830dy2002/95/ecsi4830ady-t1-e3+3 | |
TDB6HK180N16RR
Abstract: 6a65
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tdb6hk180n16rrcef363bc1322c14bb32c36+5 | |
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Contextual Info: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 |
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si4830adysi4830dy2002/95/ecsi4830ady-t1-e3+2 | |
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Contextual Info: Si4830ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 |
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si4830adysi4830dy2002/95/ec2011/65/eu+2 | |
DIODE C06-15
Abstract: c06-15 DIODE C06 15 DIODE C06 C06-15 diode C0615 DIODE C06-15 75 erc06 c06 15
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erc06diode c06-15c06-15diode c06 15+5 | |
1.5SMC27AT3GContextual Info: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology |
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mmg1001nt1datammg1001nt11.5smc27at3g | |
crcw06031000fkta
Abstract: ZENER DIODE t2 CRCW06031200FKTA Chip Resistors Mounting GaAs FET chip HK160822NJ-T A113 CTB112 CRCW06032001FKTA MMG1001NT1
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mmg1001nt1datammg1001nt1crcw06031000fktazener diode t2+7 | |
crcw06031000fkta
Abstract: CRCW06035600FKTA ZENER MARKING r12 A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132 5.1 v zener
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mmg1001nt1datammg1001nt1crcw06031000fktacrcw06035600fkta+7 | |
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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sx3704ap239transistor 801398c547+6 | |
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Contextual Info: Document Number: MMG2001NT1 Rev. 6, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology |
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mmg2001nt1 | |
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Contextual Info: PAC DN017 CALIFORNIA MICRO DEVICES 18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP Features 18-channel ESD protection Integral Zener diode clamp to suppress supply rail transients 15KV ESD protection HBM 15KV contact discharge ESD protection |
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dn01718-channel24-pin | |
N017Q
Abstract: 15KV AP209 DN017 IEC-61000-4-2
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dn01718-channel24-pinn017q+3 | |
A113
Abstract: CTB112 CTB132 XMD112 XMD132
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mmg2001nt1a113ctb112ctb132+2 | |
AP209
Abstract: DN017 15KV IEC-61000-4-2 Zener Diodes 300v N017Q
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dn01718-channel24-pinap209+4 | |
CSRS045V0P-HF
Abstract: ComChip Date code smd DIODE code marking 20A smd diode 319 SOT-143 MARKING DIODE C06 15 DIODE C06 15 62 sot143 Marking code c06 smd code diode 20a code a1 SMD
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csrs045v0p-hfiec61000-4-2iec61000-4-45/50ns+13 | |
DIODE C06-15
Abstract: DIODE C06 15 c06 15 c06-15 DIODE C06-15 75 DIODE C06-15 07
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erc06bs1300sto300vdiode c06-15+5 | |
DIODE C06-15
Abstract: DIODE C06 15 C06-15 diode c06 15 c06-15 DIODE C06-15 75 DIODE C06 ERC06 C0615
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erc0615haracteristicsdiode c06-15diode c06 15+6 | |
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Contextual Info: Comchip Low Capacitance ESD Protection Array SMD Diode Specialist CSRS045V0P-HF RoHS Device Halogen Free SOT-143 Features 0.120 3.04 0.110(2.80) ESD Protected for 2 high speed I/O ports IEC61000-4-2 (ESD) ±8kV (Contact) ,±15kV(Air). 0.038(0.96)BSC 0.080(2.02) |
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csrs045v0p-hfot-143iec61000-4-2iec61000-4-4+4 | |