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    DIODE C 642 Search Results

    DIODE C 642 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE C 642 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a106 diode

    Abstract: diode A106 SF313 Diode Optical Smoke DEtector SE313
    Contextual Info: 6427525 N E C ELECTRONICS 18268 D T* ^ ^ 4 2 7 5 2 5 GDlflShfl 1 D eT~ 98D INC_J38D ELECTRONICS INC " Tfl PRELIMINARY SPEC! F! CATIOIV NEC r ELECTRON DEVICE LIG H T EM ITTING DIODE SE3 13 / GaAs INFRARED EM ITTING DIODE -N EPO C SER IES - DESCRIPTION


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    b427S25 SF313 Tt-25 lp-50 a106 diode diode A106 Diode Optical Smoke DEtector SE313 PDF

    skiip gb 120

    Contextual Info: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage


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    B7-38 skiip gb 120 PDF

    LTC4098-3.6

    Abstract: SXA-01GW-P0.6
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals


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    FF400R12KE3 CBB32 CBB326 223DB 2313BCBC 1231423567896A42BCD6ED3F 54B36 LTC4098-3.6 SXA-01GW-P0.6 PDF

    DIODE Z54

    Abstract: Laser microphone NDL3008 nec laser diode J22686
    Contextual Info: ST D E |t.4 2 ? S 2 5 6427525 □□□St.3T fl | - N E C~ELECTRONICS INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATIO N NEC LASER DIODE ELECTRON DEVICE NDL3008 DAD,VD APPLICATION AIGaAs D O UBLE HETERO S T R U C T U R E LASER DIODE SEP. 7 ,1 9 8 4 D E S C R IP T IO N


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    b427SE5 T-41-05 NDL3008 NDL300 k457S2S T-41-05 J22686 DIODE Z54 Laser microphone NDL3008 nec laser diode PDF

    br - b2d

    Abstract: br b2d
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM200GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 br - b2d br b2d PDF

    LTC4098-3.6

    Abstract: 36A65 FBC 320
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM200GA120DLCS CBB32 CBB326 223DB 2313BCBC 3265C C14BC LTC4098-3.6 36A65 FBC 320 PDF

    2NU diode

    Abstract: LTC4098-3.6 DIODE C06-15
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM400GA120DLC 36134B6 61FA3265 2NU diode LTC4098-3.6 DIODE C06-15 PDF

    br b2d

    Abstract: br- b2d br - b2d LTC4098-3.6
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM300GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 br b2d br- b2d br - b2d LTC4098-3.6 PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM100GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM150GB120DLC CBB32 CBB326 223DB 2313BCBC 3265C C14BC 1231423567896A42BCD6ED3F 54B36 PDF

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values


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    BSM300GA120DLC 36134B6 61FA3265 PDF

    NEC K 2500

    Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
    Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The


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    b4E7525 6W7525 T-41-05 NDL3000 NDL3000 Tokyo456-3111, J22686 LD-1104B NEC K 2500 DAD 1000 05611 LD1104 laser diode for printer NEC diode J22686 PDF

    Contextual Info: ST a ^ »E|b4S7SaS 6642 427525 M bv O DDSt.ll N E C fi TENTATIVE S P E C IF IC ATION ELECTRONICS'INC “ 59C 05611 D T-41-05 LASER DIODE NDL3000 E L E C T R O N D E V IC E DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETERO STRU CTU RE LA SER DIODE D E S C R IP T IO N


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    T-41-05 NDL3000 NDL3000 J22686 PDF

    s2e diode

    Abstract: BH204 DIODE S2E
    Contextual Info: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz


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    SH92103 SH93103 BH204 SH92103 SH93103 s2e diode DIODE S2E PDF

    NDL3110

    Abstract: NEC 2801 NEC DIODE LASER LD-2100 laser diode for printer
    Contextual Info: N E C EL EC TRO NIC S INC M |m s 7 s s s g d ib s e i t • 98D 18521 O T - VZ -O ^ DATA S H E E T Prelim inary NEC LASER DIODE ELECTRON DEVICE NDL3110 830 nm OPTICAL DISK MEMORY APPLICATION AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3110 is an AIGaAs high power 830 nm laser diode and especially developed for Optical Disk Memory and Laser Beam


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    NDL3110 NDL3110 1987M NEC 2801 NEC DIODE LASER LD-2100 laser diode for printer PDF

    RLT635_SERIES_CMOUNT_TO3

    Contextual Info: RLT635- Series, C-mount / TO-3 TECHNICAL DATA 635nm High Power Laser Diode Features • CW Output Power: 150 mW, 300 mW, 500 mW • High Reliability • High Efficiency • TO Package or C-Mount Applications • Medical Usage • Pointer • Laser Display


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    RLT635- 635nm RLT635-150-x RLT635-300-x RLT635-500-x rlt635 RLT635_SERIES_CMOUNT_TO3 PDF

    AV73

    Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
    Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s


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    BAV73 117027/00/01/pp8 AV73 Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805 PDF

    Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    bb53R31 QQ30fl O220AB BUK657-500B bbS3T31 Q030flT4 PDF

    zener diode numbering system

    Abstract: diode identification USR1171 USR1172 USR1173 USR1174 1008 wl
    Contextual Info: USR 1171 thru USR 1174 Microisemi Corp. f The diode experts SANTA ANA, CA SCOTTSDALE, A Z For more information call: 602 941-6300 DESCRIPTION This series of Microsemi 400mW U ltra-S table Reference Diodes offers a C E R T IFIE D R E F E R E N C E VOLTAGE STABILITY as m easured over


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    400mW PPM/1000 zener diode numbering system diode identification USR1171 USR1172 USR1173 USR1174 1008 wl PDF

    600PIV

    Abstract: "Schematic Diagrams" 400PIV 1200PIV
    Contextual Info: c a y a o C O M P M A N POWER MODULES Y nr •«- -2 50 in 63 60 m m - — -1 90 in (43 26 m m )- r 25A-42.5A SCR/DIODE CIRCUITS ► ^ “ U* m | _ I vi i f s Part Number Identification 1 st Digit Series Type 2nd Digit Current


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    C3Y30M 5A-42 600PIV "Schematic Diagrams" 400PIV 1200PIV PDF

    30120C

    Contextual Info: RURG30120CC 33 « « r a e 30A, 1200V Ultrafast Dual Diode April 1995 Package Features • Ultrafast with Soft R ecovery. <110ns JE D E C S TYLE TO -247 • Operating T em p eratu re. +175°C


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    RURG30120CC 110ns 110ns) RURG30120CC 30120C PDF

    Contextual Info: AlGaInP Visible Laser Diode ADL-63102TL-3 DATE:2006/06/29 Ver 1.0 o ★635nm 10mW 50 C Reliable Operation • Features 1. High visibility 10mW 2. High temperature operation 3. High reliability • Applications 1. Industrial laser markers 2. Measuring instruments


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    ADL-63102TL-3 635nm /divers-vis/ari/635nm/ adl-63102tl-3 PDF

    LD63

    Contextual Info: ADL-6305BTL AlGaInP Visible Laser Diode 6-2D-LD63-027_Rev.00 o ★635nm 5mW 60 C high temperature operation type • Features 1. High temperature operation 2. High precision assembly 3. High visibility • Applications 1. General purpose red laser light source


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    ADL-6305BTL 635nm 6-2D-LD63-027 divers-vis/ari/640nm/ adl-6305btl LD63 PDF

    Contextual Info: AlGaInP Visible Laser Diode ADL-63201TL DATE:2005/10/18 Ver 1.0 o ★635nm 20mW 40 C Reliable Operation • Features 1. High visibility 2. MTTF > 3000hrs 3. Small perpendicular divergence angle • Applications 1. Industrial laser markers 2. Survey and engineering instruments


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    ADL-63201TL 635nm 3000hrs divers-vis/ari/635nm/ adl-63201tl PDF