DIODE C 642 Search Results
DIODE C 642 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE C 642 Datasheets Context Search
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s2e diode
Abstract: BH204 DIODE S2E
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SH92103 SH93103 BH204 SH92103 SH93103 s2e diode DIODE S2E | |
AV73
Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
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BAV73 117027/00/01/pp8 AV73 Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805 | |
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Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a |
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bb53R31 QQ30fl O220AB BUK657-500B bbS3T31 Q030flT4 | |
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Contextual Info: AlGaInP Visible Laser Diode ADL-63201TL DATE:2005/10/18 Ver 1.0 o ★635nm 20mW 40 C Reliable Operation • Features 1. High visibility 2. MTTF > 3000hrs 3. Small perpendicular divergence angle • Applications 1. Industrial laser markers 2. Survey and engineering instruments |
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ADL-63201TL 635nm 3000hrs divers-vis/ari/635nm/ adl-63201tl | |
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Contextual Info: Tem ic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photo diode in a plastic package with a spherical side view lens. The epoxy package itself is an 1R filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR |
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BPV23NF BPV23NF 15-Jul-96 t5-JuI-96 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg |
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LBAS16WT1G SC-70/SOT-323 | |
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Contextual Info: SKiiP 642GB120-2D + < ". = / 4 Absolute Maximum Ratings Symbol Conditions IGBT Values > > #' >B 7 @ : + < ". &! ' = Units #" A C" > > > &-. ' &-. ' -%" Inverse diode SKiiP 2 2-pack - integrated |
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642GB120-2D | |
SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
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O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 | |
SCR 25a
Abstract: SCR 25 amps PIV 600 1200PIV
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5A-42 SCR 25a SCR 25 amps PIV 600 1200PIV | |
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Contextual Info: SKiiP 642GH120-4D + < !. = / 4 Absolute Maximum Ratings Symbol Conditions IGBT > > "' >B 7 @ : + < !. % ' = Values Units "! A C ! > > > %-.' %-.' -$! Inverse diode SKiiP 2 4-pack - integrated |
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642GH120-4D | |
SEMIKRON SKIIP 642 GB 120 - 208 CTV
Abstract: 500a diode Diode 500A
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642 gh
Abstract: "642 GH" Diode c 642
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Contextual Info: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C |
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SEMiX703GAL126HDs E63532 | |
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Contextual Info: SEMiX703GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAR126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
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SEMiX703GAR126HDs E63532 | |
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IN4*A 752 diodeContextual Info: C o n d itio n s1> vV 4> AC, 1 min Operating / stor. tem perature —I o o ¡sol Q Sym bol —I SKiiP 642 GH 120 - 2*208 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 600 -40.+150 600 1200 4320 93 V V A °C A A A kAs2 |
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B7-10 IN4*A 752 diode | |
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Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C |
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SEMiX703GB126HDs E63532 | |
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Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX703GD126HDc VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
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SEMiX703GD126HDc E63532 | |
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Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
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SEMiX703GD126HDc E63532 | |
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Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
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SEMiX703GB126HDs SEMiX703GB126HDs E63532 | |
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Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
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SEMiX703GB126HDs E63532 | |
SEMIKRON SKIIP 642 GB 120 - 208 CTV
Abstract: P16/200 skiip gb 120
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\marketin\datenbl\skiippac\sensor\d642gb SEMIKRON SKIIP 642 GB 120 - 208 CTV P16/200 skiip gb 120 | |
IRFP240
Abstract: IRF640 SAMSUNG
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IRF640/641 IRFP240/241/242/243 OG121TI O-220 IRF640/IRFP140 IRF641 IRFP241 F642/IRFP242 IRF643/IRFP243 IRF640/641/642/643 IRFP240 IRF640 SAMSUNG | |
642GB120Contextual Info: SKiiP 642GB120-2D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter : ; ", < 1 / Absolute Maximum Ratings Symbol Conditions IGBT Values |
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642GB120-2D 642GB120 | |
SEMIX703GD126HDCContextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules |
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SEMiX703GD126HDc B100/125 R100exp B100/125 1/T-1/T100) SEMIX703GD126HDC | |