DIODE C 642 Search Results

a106 diode

Abstract: diode A106 SF313 Diode Optical Smoke DEtector SE313
Contextual Info: 6427525 N E C ELECTRONICS 18268 D T* ^ ^ 4 2 7 5 2 5 GDlflShfl 1 D eT~ 98D INC_J38D ELECTRONICS INC " Tfl PRELIMINARY SPEC! F! CATIOIV NEC r ELECTRON DEVICE LIG H T EM ITTING DIODE SE3 13 / GaAs INFRARED EM ITTING DIODE -N EPO C SER IES - DESCRIPTION

skiip gb 120

Contextual Info: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage

LTC4098-3.6

Abstract: SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals

DIODE Z54

Abstract: Laser microphone NDL3008 nec laser diode J22686
Contextual Info: ST D E |t.4 2 ? S 2 5 6427525 □□□St.3T fl | - N E C~ELECTRONICS INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATIO N NEC LASER DIODE ELECTRON DEVICE NDL3008 DAD,VD APPLICATION AIGaAs D O UBLE HETERO S T R U C T U R E LASER DIODE SEP. 7 ,1 9 8 4 D E S C R IP T IO N

br - b2d

Abstract: br b2d
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

LTC4098-3.6

Abstract: 36A65 FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

2NU diode

Abstract: LTC4098-3.6 DIODE C06-15
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

br b2d

Abstract: br- b2d br - b2d LTC4098-3.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

NEC K 2500

Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The

Contextual Info: ST a ^ »E|b4S7SaS 6642 427525 M bv O DDSt.ll N E C fi TENTATIVE S P E C IF IC ATION ELECTRONICS'INC “ 59C 05611 D T-41-05 LASER DIODE NDL3000 E L E C T R O N D E V IC E DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETERO STRU CTU RE LA SER DIODE D E S C R IP T IO N

s2e diode

Abstract: BH204 DIODE S2E
Contextual Info: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz

NDL3110

Abstract: NEC 2801 NEC DIODE LASER LD-2100 laser diode for printer
Contextual Info: N E C EL EC TRO NIC S INC M |m s 7 s s s g d ib s e i t • 98D 18521 O T - VZ -O ^ DATA S H E E T Prelim inary NEC LASER DIODE ELECTRON DEVICE NDL3110 830 nm OPTICAL DISK MEMORY APPLICATION AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3110 is an AIGaAs high power 830 nm laser diode and especially developed for Optical Disk Memory and Laser Beam

RLT635_SERIES_CMOUNT_TO3

Contextual Info: RLT635- Series, C-mount / TO-3 TECHNICAL DATA 635nm High Power Laser Diode Features • CW Output Power: 150 mW, 300 mW, 500 mW • High Reliability • High Efficiency • TO Package or C-Mount Applications • Medical Usage • Pointer • Laser Display

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

zener diode numbering system

Abstract: diode identification USR1171 USR1172 USR1173 USR1174 1008 wl
Contextual Info: USR 1171 thru USR 1174 Microisemi Corp. f The diode experts SANTA ANA, CA SCOTTSDALE, A Z For more information call: 602 941-6300 DESCRIPTION This series of Microsemi 400mW U ltra-S table Reference Diodes offers a C E R T IFIE D R E F E R E N C E VOLTAGE STABILITY as m easured over

600PIV

Abstract: "Schematic Diagrams" 400PIV 1200PIV
Contextual Info: c a y a o C O M P M A N POWER MODULES Y nr •«- -2 50 in 63 60 m m - — -1 90 in (43 26 m m )- r 25A-42.5A SCR/DIODE CIRCUITS ► ^ “ U* m | _ I vi i f s Part Number Identification 1 st Digit Series Type 2nd Digit Current

30120C

Contextual Info: RURG30120CC 33 « « r a e 30A, 1200V Ultrafast Dual Diode April 1995 Package Features • Ultrafast with Soft R ecovery. <110ns JE D E C S TYLE TO -247 • Operating T em p eratu re. +175°C

Contextual Info: AlGaInP Visible Laser Diode ADL-63102TL-3 DATE：2006/06/29 Ver 1.0 o ★635nm 10mW 50 C Reliable Operation • Features 1. High visibility 10mW 2. High temperature operation 3. High reliability • Applications 1. Industrial laser markers 2. Measuring instruments

LD63

Contextual Info: ADL-6305BTL AlGaInP Visible Laser Diode 6-2D-LD63-027_Rev.00 o ★635nm 5mW 60 C high temperature operation type • Features 1. High temperature operation 2. High precision assembly 3. High visibility • Applications 1. General purpose red laser light source

Contextual Info: AlGaInP Visible Laser Diode ADL-63201TL DATE：2005/10/18 Ver 1.0 o ★635nm 20mW 40 C Reliable Operation • Features 1. High visibility 2. MTTF > 3000hrs 3. Small perpendicular divergence angle • Applications 1. Industrial laser markers 2. Survey and engineering instruments