DIODE C 642 Search Results

s2e diode

Abstract: BH204 DIODE S2E
Contextual Info: PIN DIODE MODULES PIN diode switches - High Power SP3T HIGH POWER SP3T Electrical characteristics @ 25° C Characteristics at 25°C Frequency range Test conditions N/A Type Case 1 SH92103 SH93103 BH204 BH204 Loss Isolation Input power L I Pin 400 MHz 200 MHz

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

Contextual Info: bRE D N AflER P H I L I P S / D I S C R E T E m bb53R31 QQ30fl^0 P h ilip s S e m ic o n d u c to rs P ro d u c t S p e c ific a tio n Pow erM O S transistor Fast recovery diode F E T GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: AlGaInP Visible Laser Diode ADL-63201TL DATE：2005/10/18 Ver 1.0 o ★635nm 20mW 40 C Reliable Operation • Features 1. High visibility 2. MTTF > 3000hrs 3. Small perpendicular divergence angle • Applications 1. Industrial laser markers 2. Survey and engineering instruments

Contextual Info: Tem ic BPV23NF S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photo­ diode in a plastic package with a spherical side view lens. The epoxy package itself is an 1R filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg

Contextual Info: SKiiP 642GB120-2D + < ". =     /  4  Absolute Maximum Ratings Symbol Conditions IGBT Values > > #' >B 7    @   :   + < ". &! ' = Units #" A C" > > >  &-. '   &-. ' -%"   Inverse diode SKiiP 2 2-pack - integrated

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

SCR 25a

Abstract: SCR 25 amps PIV 600 1200PIV
Contextual Info: 31E CRYDOM CO » • 2542537 ODDObO? C3YDÜM T «CRY POWER MODULES C O M P A N Y H T 25A-42.5A SCR/DIODE CIRCUITS Part Number Identification 1st Digit Series Type B-Casestyle Ceramic Base 2nd Digit Current 3rd Digit Circuit Type 5-25 amps. 1-9 6-42.5 amps." (see schematic)

Contextual Info: SKiiP 642GH120-4D + < !. =     /  4  Absolute Maximum Ratings Symbol Conditions IGBT > > "' >B 7    @   :   + < !. % ' = Values Units "! A C ! > > >  %-.'   %-.' -$!   Inverse diode SKiiP 2 4-pack - integrated

SEMIKRON SKIIP 642 GB 120 - 208 CTV

Abstract: 500a diode Diode 500A
Contextual Info: SKiiP 642 GB 120 - 208 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

642 gh

Abstract: "642 GH" Diode c 642
Contextual Info: SKiiP 642 GH 120 - 2*208 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Contextual Info: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C

Contextual Info: SEMiX703GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAR126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

IN4*A 752 diode

Contextual Info: C o n d itio n s1> vV 4> AC, 1 min Operating / stor. tem perature —I o o ¡sol Q Sym bol —I SKiiP 642 GH 120 - 2*208 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 600 -40.+150 600 1200 4320 93 V V A °C A A A kAs2

Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C

Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX703GD126HDc VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C

Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

SEMIKRON SKIIP 642 GB 120 - 208 CTV

Abstract: P16/200 skiip gb 120
Contextual Info: SKiiP 642 GB 120 - 208 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

IRFP240

Abstract: IRF640 SAMSUNG
Contextual Info: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re

642GB120

Contextual Info: SKiiP 642GB120-2D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter : ; ", <     1  /  Absolute Maximum Ratings Symbol Conditions IGBT Values

SEMIX703GD126HDC

Contextual Info: SEMiX703GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 33c Trench IGBT Modules