DIODE C 30 PH Search Results

ultra low forward voltage schottky diode

Contextual Info: CTLSH01-30 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Ultra Tiny

Contextual Info: CFSH01-30 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and low leakage current are prime requirements. Packaged in a Tiny Leadless

Contextual Info: niXYS DSEP 30-04 HiPerFRED Epitaxial Diode Ì fav with soft recovery V rrM trr v” r s m V RR« V V 400 400 30 A 400 V 30 ns TO-247AD Type DSEP 3 0 - 0 4 A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A

ixys 047

Contextual Info: □IXYS Advanced Technical Data Power Schottky Rectifier DSSK 30 iFAV = 2x15 A V RRM = 35 - 45 V TO-247 AD W- T M V RSM V RRM V V 35 45 35 45 Type C TAB DSSK 30-0035B DSSK 30-0045B A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings (per diode)

TIL111 equivalent

Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
Contextual Info: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

Contextual Info: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

1431 transistor equivalent

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

Contextual Info: Si4812DY VISHAY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) 30 r DS(ON) (& ) I d (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 S C H O TTK Y PRODUCT SUM M ARY VSD (V) VDS (V)

TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

Contextual Info: ADL-63V05CZ AlGaInP Red Laser Diode ★635nm 0.5W 30 oC C-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity 6. Small aspect ratio

Contextual Info: ADL-65053TL-2 AlGaInP Visible Laser Diode DATE：2006/6/30 Ver 1.0 o ★650nm 5mW 70 C Reliable Operation • Features 1. High temperature operation 2. FFP single lateral mode 3. High reliability 4. Excellent far field pattern. • Applications 1. Laser pointers

Contextual Info: RKP301KK Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1687-0100 Rev.1.00 May 30, 2008 Features • Low capacitance. C = 0.30 pF max • Low forward resistance. (rf = 2.5 Ω max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.

Contextual Info: A p o llo SE3455/5455 GaAs Infrared Emitting Diode FEATURES » T 0-4-6 metal u n pactage ' C hoice ol Rat window or lensed package » 90r or 30° nominai beam an^e cption ' 935 nm waveienglh » Wide oper-jling temperature range (- 55' C lo +125' Cj • Ideal lor high pulsed currant applicalions

Contextual Info: AlGaInP Red Laser Diode ADL-63V02CZ DATE：2008/03/24 Ver 2.0 o ★635nm 0.5W 30 C CT-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime 4. Narrow spectral line-width 5. High polarization purity Cathode tab - • Applications 1. Laser display

jrm 45

Abstract: jrm A 45 DIODE 1B 1b005 diode 60 31 1B01S 1B02S 1B04S
Contextual Info: International I ö R Rectifier Bridges Fax on Case Demand Outline Number Key I fsm Part Number VRRM lo @ T C V (A) W Vfm (V) (A) 50 Hi (A) tOHz (AJ R »< ' l * {mW Notes Single Phase Diode D- 71 A vaila b le in E l 50 1 40 30 31 60 5 6 7 15 1B01S 100 1

IXYS snubber DIODE

Abstract: LOW POWER DIODE DIODE DATABOOK D-68623
Contextual Info: DSEC 16-04AS HiPerFREDTM Epitaxial Diode IFAV = 2x 10 A VRRM = 400 V trr = 30 ns with common cathode and soft recovery Preliminary Data VRSM VRRM V V 400 400 TO-263 AB Type DSEC 16-04AS A C A A Symbol Conditions IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

IRG4BC30KD-S

Contextual Info: International IG R Rectifier euminaw 4 IR G B C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 30 PD9,594A K D -S Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tjc = 1 0 ms , @360V Vce start , T j = 125°C,

Contextual Info: ENGINEERING SPECIFICATIONS L.Ä T O T T O R ] S AN Y O E L E C T R O N I C S - 3 1 1 . T # U E L E C T R I C C S V T i i k l t n * [ f - S k i. 680 I CE C O . . L TD D I V I S I O N i - C k i J i p i o Date; July 30, 1990 LASER Type: DIODE SDL-7033-111 [T E N T A T IVE ]

7033

Contextual Info: ENGINEERING SPECIFICATIONS * T O T T O R I SANYO E L E C T R I C CO. LTD E L E C T R O N I C E E V I C E D I V I S I O N S-S 1 I . T n W k i o > - C t o T * t t » T l ~ S 1 l< 8 Ä 0 J i p in D ate*- July 30, 1990 LA SER T ype: DIODE SD L — 7 0 3 3 —lO l

Contextual Info: I.R. S w itc h e s 00 Input Diode D e s c r ip t io n T ype Vf No. Output Phototransistor B V ceo Ir MA Volts Volts Volts max Ifm a max min min lc ja 1.5 20 10 3.0 30 100 VR B V ceo min Coupled IC E O CTR If = 0 lE[ia nA max 100 100 D % min If mA Volts 2.5

e7 bulb

Abstract: 160 e7
Contextual Info: File C a ta lo g : Electron Tube Products 5845 _ Section: Tem perature Tubes TT-30 MINIATURE TEMPERATURE LIMITED DIODE DESCRIPTION This tem perature limited d io d e is d e sig n e d fo r use in vo lta g e re gu lator a p p lica tio n s or fo r use in circuits requir­

sa1 Zener diode

Abstract: zener 4a1 CD610 D00127
Contextual Info: 2302 5 5‘4 COMPENSATËD’ D E V T C E S I NC" m 9 1 D 001 27 D E § 2 30 a S S 4 D - r - 't - t t 0 0 00 1 57 t, . ULTRA STABLE-VOLTAGE: TIME STABILITY 10PPM/I000 HOURS >6.2 VOLT ±2% ZENER VOLTAGE CD610 ' TEMPERATURE COMPENSATED ZENER REFERENCE DIODE MAXIMUM RATINGS

laser diode philips

Abstract: class I laser diode DHHS 21CFR lens laser diode CQF50 n type laser diode
Contextual Info: Philips Components cqfso ^ - BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH GRADED INDEX FIBRE PIGTAIL The CQF50 is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed