DIODE C 30 PH Search Results

diode piv 10

Abstract: DIODE 35 S439IE
Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000 30 18

ultra low forward voltage schottky diode

Contextual Info: CTLSH01-30 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Ultra Tiny

Contextual Info: CFSH01-30 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and low leakage current are prime requirements. Packaged in a Tiny Leadless

Contextual Info: CTLSH01-30 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH01-30 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Ultra Tiny

Contextual Info: niXYS DSEP 30-04 HiPerFRED Epitaxial Diode Ì fav with soft recovery V rrM trr v” r s m V RR« V V 400 400 30 A 400 V 30 ns TO-247AD Type DSEP 3 0 - 0 4 A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A

ixys 047

Contextual Info: □IXYS Advanced Technical Data Power Schottky Rectifier DSSK 30 iFAV = 2x15 A V RRM = 35 - 45 V TO-247 AD W- T M V RSM V RRM V V 35 45 35 45 Type C TAB DSSK 30-0035B DSSK 30-0045B A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions Maximum Ratings (per diode)

250A darlington transistor

Abstract: FCD880 FCD885 FCD890 ILD74 MCT66 16 pin DIP socket
Contextual Info: 1-24 Coupled Characteristics Max Ratings @ T a = 25°C Transistor >C VCEO mA V Vr V lF mA Diode v iso kV Min Current Transfer Ratio •C^F @V ;e % mA V Output Pd mW FCD880 Trans 400 30 30 3.0 60 FCD885 Trans 400 30 30 3.0 60 2.5 10 10 10 FCD890 Darlg 400 30

FCD880

Abstract: FDC880 FCD885 FCD890 ILD74 MCT66
Contextual Info: 1-24 Coupled Characteristics Max Ratings @ T a = 25°C Transistor >C VCEO mA V Vr V lF mA Diode v iso kV Min Current Transfer Ratio •C^F @V ;e % mA V Output Pd mW FCD880 Trans 400 30 30 3.0 60 FCD885 Trans 400 30 30 3.0 60 2.5 10 10 10 FCD890 Darlg 400 30

Contextual Info: □IXYS DSEC 60-04; HiPerFRED Epitaxial Diode with soft recovery v RSM Type V VRHM V 400 400 DSEC 60-04A I fav VRRM t,rr 30 A 400 V 30 ns TO-247 AD V C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A A A I fsm

Contextual Info: AlGaInP Red Laser Diode ADL-63V01CZ DATE：2007/07/18 Ver 1.0 o ★635nm 0.5W 30 C C-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime 4. Narrow spectral line-width 5. High polarization purity Diode laser chip • Applications 1. Laser display

TIL111 equivalent

Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
Contextual Info: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

peltier cooler

Abstract: Peltier module 58520 L8413 808nm source photonics LLD1007E02 817 diode CW laser diode
Contextual Info: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. RELATIVE RADIANT OUTPUT POWER (%) Top(c) = 20 °C 20 10 10 30 20 FORWARD CURRENT If (A) PRELIMINARY DATA

Heavy Twin Tower

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRA80030CTL LOW VF SCHOTTKY DIODE MODULE TYPE 800A Features 800Amp Rectifier 30 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number

Heavy Twin Tower

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBRA40030CTL LOW VF SCHOTTKY DIODE MODULE TYPE 400A Features 400Amp Rectifier 30 Volts High Surge Capability HEAVY TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 Part Number

Contextual Info: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current

Contextual Info: 3875081 G E S O L I D STATE 01 E D 19830 Optoelectronic Specifications _ V 7 HARRI S SEMICOND SECTOR 3 7E » Ml 4305571 Photon Coupled Isolator C N Y 30-C N Y 34 Ga As Infrared Emitting Diode & Light Activated SCR T he G E Solid S tate CNY30 and C NY34 consist o f a gallium arsenide,

FCD836

Abstract: FCD836D FCD850 FCD850C FCD850D FCD855 FCD855C FCD855D FCD860 FCD865
Contextual Info: 1-18 Coupled Characteristics Max Ratings @ T * = 25°C Device No. Output PD mW Transistor •c v CEO mA V Diode Vf? V 'f mA v iSO kV Min Current Transfer Ratio ic ^ F @>F @V c e % mA V FCD830D<2> Trans 250 25 30 3.0 60 6.0 20 10 10 FCD831<2> Trans 250 25 30

1431 transistor equivalent

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

Contextual Info: Si4812DY VISHAY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) 30 r DS(ON) (& ) I d (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 S C H O TTK Y PRODUCT SUM M ARY VSD (V) VDS (V)

H11A1

Abstract: H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 MCT26
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

TIL112

Abstract: Phototransistor til 81 OF til 81 TIL115 TIL 143 TIL 115 H11A1 H11A2 H11B1 H11D2
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

Contextual Info: ADL-63V05CZ AlGaInP Red Laser Diode ★635nm 0.5W 30 oC C-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity 6. Small aspect ratio

Contextual Info: ADL-65053TL-2 AlGaInP Visible Laser Diode DATE：2006/6/30 Ver 1.0 o ★650nm 5mW 70 C Reliable Operation • Features 1. High temperature operation 2. FFP single lateral mode 3. High reliability 4. Excellent far field pattern. • Applications 1. Laser pointers