DIODE C 120 Search Results

DZ800S17K3

Abstract: FF800R17KE3
Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data

DZ800S17K3

Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

Contextual Info: Silicon C a rbide Sc h ottk y Dio d e IDW10G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

IDW40G120C5B

Contextual Info: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1

Contextual Info: Silicon Carbide Schottky Diode IDW15G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW15G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1

Contextual Info: Silicon Carbide Schottky Diode IDW20G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW20G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1

D3012B5

Contextual Info: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1

h30r1202

Abstract: igbt h30r1202 h30r120 H30R1202 equivalent "h30r1202" IHW30N120R2 600v 30a IGBT PG-TO-247-3 IGBT 900v 60a 1200v diode to247
Contextual Info: IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

h30r120

Contextual Info: IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

H30R1202

Abstract: h30r120 igbt h30r1202 H30R1202 equivalent IHW30N120R2 PG-TO-247-3 "h30r1202"
Contextual Info: IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

H15R1202

Abstract: IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3 IGBT 500V 35A
Contextual Info: IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

h25r1202

Abstract: IGBT H25R1202 Ic D 1708 ag PG-TO247-3 IHW25N120R2 PG-TO-247-3 1200v 30A to247 IGBT 1200V 60A H25R120
Contextual Info: IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

h20r1202

Abstract: h20r1202 igbt equivalent of h20r1202 H20R120 igbt h20r1202 equivalent H20R1202 H20R igbt 20A 1200v IHW20N120R2 pspice high frequency igbt
Contextual Info: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

5a6 diode

Contextual Info: SKCD 61 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 61 C 120 I HD

Contextual Info: SKCD 31 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, #4536 #49, & SEMICELL CAL-DIODE SKCD 31 C 120 I HD

Contextual Info: SKCD 11 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 11 C 120 I HD

Contextual Info: SKCD 14 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 14 C 120 I HD

S439GA

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600 18 11 120

Contextual Info: SKCD 18 C 120 I HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 18 C 120 I HD

Contextual Info: SKCD 11 C 120 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 11 C 120 I HD VRRM = 1200 V Size: 3,35 mm X 3,35 mm Package: wafer frame 

Contextual Info: SKCD 14 C 120 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 14 C 120 I HD VRRM = 1200 V Size: 3,74 mm X 3,74 mm Package: wafer frame 

C-120

Contextual Info: SKCD 47 C 120 I HDSEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions +, #4536 #48, & SEMICELL CAL-DIODE SKCD 47 C 120 I HD VRRM = 1200 V Size: 6,86 mm X 6,86 mm Package: wafer frame 

P 131 GB

Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Contextual Info: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode