DIODE BY 399 Search Results
DIODE BY 399 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
|
Zener Diode, 16 V, USC | Datasheet |
DIODE BY 399 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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diode BY 399Contextual Info: BY 396.BY 399 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Fast silicon rectifier diodes BY 396.BY 399 Forward Current: 3 A Reverse Voltage: 100 to 800 V |
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Contextual Info: BY 396.BY 399 *0 Axial lead diode Fast silicon rectifier diodes BY 396.BY 399 Forward Current: 3 A Reverse Voltage: 100 to 800 V !"#$ Mechanical Data %&$' ' ) * 1) + ,$-*%$./ |
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BY399Contextual Info: BY 396.BY 399 *0 Axial lead diode Fast silicon rectifier diodes BY 396.BY 399 Forward Current: 3 A Reverse Voltage: 100 to 800 V !"#$ Mechanical Data %&$' ' ) * 1) + ,$-*%$./ |
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EB41Contextual Info: EB41 PH ILIPS D O UBLE DIODE with separate cathodes DIO D E DOUBLE avec cathodes séparées DOPPELDIODE mit getrennten Kathoden Heating: indirect by A.C. or D.C.; parallel supply Chauffage: indirect par C.A. ou C.C.; alimentation en parallèle Heizung: indirekt |
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jx4148
Abstract: J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1
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MIL-PRF-19500/116L MIL-PRF-19500/116K 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, jx4148 J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1 | |
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Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR, |
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MIL-PRF-19500/117P MIL-PRF-19500/117N 1N962B-1 1N992B-1, 1N962BUR-1 1N992BUR-1, 1N962C-1 1N992C-1, 1N962CUR-1 1N992CUR-1, | |
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Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 October 2004. MIL-PRF-19500/157P 1 July 2004 SUPERSEDING MIL-PRF-19500/157N 18 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, |
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MIL-PRF-19500/157P MIL-PRF-19500/157N 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, | |
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Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2014. MIL-PRF-19500/645D 31 October 2013 SUPERSEDING MIL-PRF-19500/645C 24 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/645D MIL-PRF-19500/645C 1N6772, 1N6773, 1N6772R 1N6773R MIL-PRF-19500. | |
1N6664 RContextual Info: * METRIC The documentation and process conversion measures necessary to comply shall with this document shall be completed by 3 March 2011. * MIL-PRF-19500/594B 3 December 2010 SUPERSEDING MIL-PRF-19500/594A 3 July 1998 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/594B MIL-PRF-19500/594A 1N6664 1N6666, 1N6664R 1N6666R, MIL-PRF-19500. 1N6664 R | |
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Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 January 2014. INCH-POUND MIL-PRF-19500/429M 14 October 2013 SUPERSEDING MIL-PRF-19500/429L 7 August 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/429M MIL-PRF-19500/429L 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, | |
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Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/682B 1 March 2013 SUPERSEDING MIL-PRF-19500/682A 16 March 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY |
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MIL-PRF-19500/682B MIL-PRF-19500/682A 1N6845U3, MIL-PRF-19500. | |
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Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 August 2013. INCH-POUND MIL-PRF-19500/286K 24 May 2013 SUPERSEDING MIL-PRF-19500/286J 28 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/286K MIL-PRF-19500/286J 1N4245 1N4249, 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 MIL-PRF-19500/427. | |
vqe 24 d
Abstract: VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188
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MIL-PRF-19500/297C MIL-S-19500/297B 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, vqe 24 d VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188 | |
33178
Abstract: 1N5551 JANTX MIL-PRF-19500 1N5550US JANTX 1N5550 1N5550US 1N5551 1N5551US 1N5552 1N5554
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MIL-PRF-19500/420G MIL-PRF-19500/420F 1N5550 1N5554, 1N5550US 1N5554US 33178 1N5551 JANTX MIL-PRF-19500 1N5550US JANTX 1N5551 1N5551US 1N5552 1N5554 | |
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Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/211D MIL-PRF-19500/211C 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177, | |
1N3611Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2013. INCH-POUND MIL-PRF-19500/228R 26 April 2013 SUPERSEDING MIL-PRF-19500/228P 26 October 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, |
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MIL-PRF-19500/228R MIL-PRF-19500/228P 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, 1N5614, 1N5616, 1N5618, 1N3611 | |
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Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. MIL-PRF-19500/647E 21 June 2013 SUPERSEDING MIL-PRF-19500/647D 5 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, |
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MIL-PRF-19500/647E MIL-PRF-19500/647D 1N6778 1N6779, MIL-PRF-19500. | |
1N6910Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 January 2012. INCH-POUND MIL-PRF-19500/723C 12 October 2011 SUPERSEDING MIL-PRF-19500/723B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, |
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MIL-PRF-19500/723C MIL-PRF-19500/723B 1N6910UTK2, 1N6911UTK2, 1N6912UTK2, 1N6910UTK2CS, 1N6911UTK2CS, 1N6912UTK2CS, 1N6910UTK2AS, 1N6911UTK2AS, 1N6910 | |
1N746A-1
Abstract: 452 regulator JANHCB1N752
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MIL-PRF-19500/127T MIL-PRF-19500/127R 1N4370A-1 1N4372A-1 1N746A-1 1N759A-1, 1N4370AUR-1 1N4372AUR-1 1N746AUR-1 1N759AUR-1, 452 regulator JANHCB1N752 | |
DO213-AB color bandContextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 October 2006. MIL-PRF-19500/115L 5 July 2006 SUPERSEDING MIL-PRF-19500/115K 16 August 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES |
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MIL-PRF-19500/115L MIL-PRF-19500/115K 1N3821A 1N3828A, 1N3016B 1N3051B, 1N3821A-1 1N3828A-1, 1N3016B-1 1N3051B-1, DO213-AB color band | |
1N3993RA
Abstract: 1N3015 PLUS
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MIL-PRF-19500/124H MIL-S-19500/124G 1N2970 1N2977, 1N2979, 1N2980, 1N2982, 1N2984 1N2986, 1N2988 1N3993RA 1N3015 PLUS | |
lm 4011
Abstract: 1N3595US-1 1N3595US diode 1N3595 1N3595US1 JAN 1N3595 1N3595 D-5D 1N3595-1 1N3595UR-1 D0-35
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MIL-PRF-19500/241H MIL-PRF-19500/241G 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, 1N3595US-1 lm 4011 1N3595US-1 1N3595US diode 1N3595 1N3595US1 JAN 1N3595 1N3595 D-5D 1N3595-1 1N3595UR-1 D0-35 | |
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Contextual Info: EU REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGE DIMENSIONS — DESCRIPTION The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the |
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OPB706A/B/C OPB7C16A/B/C. 100mA, 000b3b4 | |
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Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 February 2007. MIL-PRF-19500/359G 3 November 2006 SUPERSEDING MIL-PRF-19500/359F 22 March 2002 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, |
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MIL-PRF-19500/359G MIL-PRF-19500/359F 1N4942, 1N4944, 1N4946, 1N4947, 1N4948, 1N5615, 1N5617, 1N5619, | |