DIODE BY 028 Search Results

melf diode code

Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode

MOC263

Contextual Info: MOTOROLA O rder this docum ent by MOC263/D SEMICONDUCTOR TECHNICAL DATA MOC263 Small Outline Optoisolators [CTR = 500% Min] Darlington Output No Base Connection Motorola Preferred Device These devices consist of a gallium arsenide infrared emitting diode optically

solar panel blocking diode

Contextual Info: SPKT1845 SCHOTTKY BARRIER SOLAR RECTIFIER VOLTAGE 45 Volts CURRENT 18 Amperes FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High surge capabitity * High reliability * ideal for solar panel PV application such as By-Pass diode

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 January 2014. INCH-POUND MIL-PRF-19500/429M 14 October 2013 SUPERSEDING MIL-PRF-19500/429L 7 August 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

ic 2508

Contextual Info: CS1009 2.5 Volt Reference D e s c rip t io n The CS1009 is a precision trimmed 2.500V ±5mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatil­ ity. The tight reference tolerance is achieved by on-chip trimming

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/516D 23 July 1999 SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

Contextual Info: SLVU2.8-4 Diode Array EPD TVS™ For ESD and Latch-Up Protection PRELIMINARY PROTECTION PRODUCTS Description Features The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge ESD , cable discharge events (CDE),

003S5

Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

12 pin hitachi flyback transformer

Contextual Info: HA17384SPS/HPS, HA17385HPS High Speed Current Mode PWM Control IC for Switching Power Supply H IT A C H I ADE-204-028 Z 1st Edition June 1998 Description HA17384S/H and HA17385H are PW M control switching regulator IC series suitable for highspeed, current-mode switching power supplies. W ith ICs from this series and a few external parts, a small, low

Contextual Info: S U R -g!“ 16DY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product V M (VJ *BS (O N) lo (A l 0 .018 @ V GS = 10 V ± 9 .0 0 .028 & Vqs = 4.5 V ± 7 .3 30 D D D D ú p SO-8 0 - I& 1 Ô s N-Channel M O SFET A B S O L U T E M A X IM U M

DIODE A34

Abstract: B78108-S1153-K FOTP-127 V23806-A34-C2
Contextual Info: V23806-A34-C2 Single Mode FDDI 1x9 Transceiver with SC Receptacle Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42—0.15) .292—.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004

Contextual Info: SIEMENS SFH303 DAYLIGHT FILTER SFH303F SILICON NPN PHOTOTRANSISTOR P a c k a g e D im e n sio n s in In ch e s mm Surface not flat .028 (.7) .100(2.54) J 8 1 (4.6) .028 (.7) °l y > e a s t— T Coltactor- .157(4.0) T .100(2.54) T .071 (1.8) .310 (7-8) ÏJ47 (1.2)

AL970

Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)

Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 605 nm InGaAlP High Brightness Light Emitting Diode (605 nm) F 0281D Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • Feature Chipgröße 200 x 200 µm Wellenlänge: 605 nm Technologie:InGaAIP

DIODE T25 4 Jo

Contextual Info: SIEMENS CMPNTS-, OPTO 44E D • ÖS3b35h 000514b 3 « S I E X SIEM EN S SFH 487P GaAIAs INFRARED EMITTER 1 -4 1 -1 3 Package Dimensions in Inches mm .122(3.1) .098 ÇL5) S u rf#« not Rat .028(0.7) .016(0.4) -L , .1C .10 (2.54) [M T .024(0.6) .016 (0.4)

SEMTECH YEAR DATE CODE

Abstract: SLP2020P6 0504N
Contextual Info: RClamp0504N RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive

Contextual Info: SRDA3.3-4 through SRDA12-4 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission

Design and Fabrication of 5V Constant Voltage Power supply

Abstract: CS-8101 alarm system with constant current source inductive power regulator electromechanical VOLTAGE REGULATOR PNP DARLINGTON SINK DRIVER 500ma linear regulator application
Contextual Info: Application Note Linear Regulator Protection Circuitry by Kieran OÕMalley Most monolithic linear regulators contain basic protection features to safeguard against potentially catastrophic events. These features include short circuit and overvoltage protection, thermal shutdown, reverse battery and reverse transient protection.

Contextual Info: PD- 93923D SMPS MOSFET IRFPS40N50L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 500V 0.087Ω 170ns 46A

IRFBA22N50A

Abstract: transformer 220 25v mosfet 110A
Contextual Info: PD- 95904 IRLBA1304PbF HEXFET Power MOSFET l Logic-Level Gate Drive Ultra Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated O Purchase IRLBA1304/P for solder plated option. l Lead-Free

24V 10A SMPS

Abstract: IRFBL3703 DIODE 76A ISD76A
Contextual Info: PD - 93841 IRFBL3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters VDSS RDS on max ID 30V 0.0025Ω 260A† Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching

IRFPS40N50L

Abstract: IRFPS40N50 93923C
Contextual Info: PD- 93923C SMPS MOSFET IRFPS40N50L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 500V 0.087Ω Features and Benefits

irfps40n60k

Abstract: IRFPS
Contextual Info: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

lv2.8

Abstract: MO-203 SPLV2.8 U28 MARKING TP 41 WITH PIN CONFIGURATION DIAGRAM
Contextual Info: TVS Diode Arrays SPA Family of Products Lightning Surge Protection - SPLV2.8 Series SPLV2.8 Series 2.8V 50A TVS Array RoHS Pb GREEN The SPLV2.8 was designed to protect low voltage, CMOS devices from ESD and lightning induced transients. There is a compensating diode in parallel with the low