DIODE BRIDGE 255 Search Results

7MBR75U2B060

Contextual Info: 7MBR75U2B060 IGBT Modules IGBT MODULE U series 600V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

APT0502

Contextual Info: APTDF30H1201G Fast Diode Full Bridge Power Module 3 4 Application CR1 1 • • • • 2 Features CR3 5 6 CR2 7 VRRM = 1200V IC = 30A @ Tc = 80°C CR4 8 Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers • • •

RM20TN-H

Contextual Info: RM20TN-H A S D G H E R B Q R "Y" F P + ~ ~ ~ TYP K Z - φ"X" N J L T C W M U V Description: Mitsubishi Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase AC lines into DC voltage. Each module consists

Contextual Info: APT39F60J 600V, 42A, 0.11Ω Max trr ≤290ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

25518N

Contextual Info: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1

MDD255

Abstract: ixys MCC 700 255-16N1
Contextual Info: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1

3TF44

Abstract: 3TF52 3tf42 3TF46 3TF4222 3TF4422 simoreg 6ra24 3TF4222-0A 3TF4822 3TF5222-0AK6
Contextual Info: 2. Parts & Service Page 2-1 2.1 Power Module Part Numbers: 5 to 300 HP @ 500 VDC RATING (Amps DC) 1Q PART NUMBER 1Q TYPE (MLFB) 4Q PART NUMBER 4Q TYPE (MLFB) 15 30 60 90 123 175 255 510 A1-116-110-503 A1-116-110-504 A1-116-110-505 A1-116-110-506 A1-116-110-508

THYRISTOR MODULE MCC 25

Abstract: 2x450 DIODE bridge 255
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 255 ITRMS = 2 x 450 A MCD 255 ITAVM = 2 x 250 A VRRM = 1200 - 1800 V VRSM VDSM VRRM V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85°C; 180° sine ITSM, IFSM

Contextual Info: SKiiP 232 GDL 120 - 410 CTV E/A Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM

ZY180L

Abstract: diode b6 k 450 25518I ixys mcc 255
Contextual Info: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 A VRRM = 1200-1800 V 3 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC MCC MCC MCC 255-12io1 255-14io1 255-16io1 255-18io1 Symbol Test Conditions

Resonant Half-Bridge converter

Abstract: BIT 3195 BUS 2936 open load detection in MOSFET half bridges PWM AC MOTOR 1 PHASE CONTROl Smoke Sensor ICs A 3121 IC 3845 ic am 5890 bipolar stepper motor circuits high current
Contextual Info: Selection Guides ALLEGRO and SANKEN ICs and PMCMs PRODUCT SELECTION GUIDES ● Power Sink Drivers in order of output current ● Power Source Drivers in order of output current ● High-Voltage ≥60 V Peripheral Power and Display Drivers in order of output voltage

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
Contextual Info: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243

Contextual Info: b Microelectronics ATTL7581 Ringing-Access Switch Features • Direct pin-for-pin replacement for ATTL7541 ■ Small size/surface-mount packaging ■ Monolithic IC reliability ■ No Impulse noise generation ■ No zero cross switching required ■ Make-before-break, break-before-make operation

4305 Transistor

Contextual Info: M^K M.S. KENNEDY CORP. 17 AMP, 400 VOLT 3 PHASE BRIDGE POWER HYBRID 4305 315 699-9201 8170 T hom pson Road • C icero, N.Y. 13039 FEATURES: • 400V, 17 Am p C apability • U ltra Low Therm al R esistance - Junction to Case - 1 . 1 °CA/V • High Pow er Dissipation C apability

HIP2100IBT

Abstract: HIP2100 HIP2100IB HIP2100IBZ HIP2100IBZT HIP2100IR HIP2100IRT FN40
Contextual Info: HIP2100 Data Sheet January 2003 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC available in both 8 lead SOIC and 16 lead MLFP plastic packages. The low-side and

Pressure Sensor Spx

Abstract: IC Pressure Silicon Sensors Spx 30 SPX200AN SPX200D spx50d ic PRESSURE SENSOR SENSYM Wheatstone Bridge operational amplifier lm324 beckman pot SPX100AN
Contextual Info: SE NS YM INC b5E D 3 4 = ^ 7 3 7 0 0 0 2 3 3 2 3flb SPX50, SPX100, SPX200 Integrated Circuit Pressure Sensors GENERAL DESCRIPTION FEATURES • Low Cost ■ 0-7 psl to 0-30 psi Pressure Ranges ■ Absolute and Differential Gage Devices ■ <0.1% Full-scale Combined Linearity

Contextual Info: DB101 THRU DB107 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 1A DB VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

DBL157S

Contextual Info: DBL151S THRU DBL157S 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 1.5A Outline Dimensions and Mark DBLS VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: DBL151 THRU DBL157 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 1.5A DBL VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: DB101S THRU DB107S 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 1A VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability Outline Dimensions and Mark

Contextual Info: DBL201 THRU DBL207 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 2A Outline Dimensions and Mark DBL VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

MDS110L

Abstract: BRIDGE RECTIFIER SMD SCHOTTKY BARRIER BRIDGE RECTIFIERS
Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDLS12L THRU MDLS110L List List. 1 Package outline. 2

bridge rectifier rs 307

Abstract: TUBE rs 1026
Contextual Info: Formosa MS SMD Bridge Rectifier DF15005S THRU DF1510S List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2