DIODE BP Search Results

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

CQX48A

Abstract: BPW78 CQX48 CQX48B
Contextual Info: CQX48 GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case. The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own optical

53HK7

Contextual Info: — PRODUCT INFORMATION — Page 1 Compactron Diode-Pentode TUBES The 53HK7 is a compactron containing a high-perveance diode and a beam-power pentode. The diode is intended for service as the damping diode and the pentode as the horizontaldeflection amplifier in television receivers.

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

BAP51-03

Abstract: DIODE marking S4 06 SMD MARKING CODE s4 SC-76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance PIN

marking code k1

Abstract: BAP51-02 smd marking KM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance

smd code marking A8 diode

Abstract: smd diode A8 smd diode code a8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance

BAP51-03

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

smd schottky diode marking 72

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

Marking Code 72

Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

1PS59SB20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

Ea 1530 A

Contextual Info: HL1566AF 1.55 im Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 jim InGaAsP distributed-feedback laser diode (DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is

BAS270

Abstract: BP317 BAS27
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.

marking code WL

Abstract: GP 724 DIODE diode SMD WL MARKING WL smd diode marking code
Contextual Info: BA591WS BAND SWITCHING DIODE PINNING Features • Very small plastic SMD package • Low diode capacitance • Low diode forward resistance • Small inductance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL" Simplified outline SOD-323 and symbol

bpw41

Abstract: BPW41 remote control ZME50
Contextual Info: ZME50 INFRA-RED EMITTING DIODE DESCRIPTION THE ZME50 IS A GaAlAs INFRA-RED EMITTING DIODE MOULDED IN A CLEAR 5mm 0 PACKAGE WITH A MEDIUM WIDE BEAM, 50°, RADIATION EMISSION ANGLE THE ZME50 IS SPECTRALLY MATCHED TO THE BPW41 SERIES PIN PHOTODIODES WHICH TOGETHER PROVIDE IDEAL

NX5317EH

Contextual Info: DATA SHEET LASER DIODE NX5317EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

PX10160E

Contextual Info: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

transistor c915

Abstract: BPC60C-915-02 BPC60C-940-02 BPC60C-980-02
Contextual Info: Data Sheet Preliminary 60W 9xxnm 20% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC60C-9xx-02 The Bookham BPC60C-9xx-02 20% fill factor laser diode bar on passive cooler series has been designed to provide the increased brightness and reliability required for collimated

2 Wavelength Laser Diode

Abstract: bookham 940 note application laser diode BPC30C-915-01 BPC30C-940-01 BPC30C-980-01 Zurich E2
Contextual Info: Data Sheet Preliminary 30W 9xx nm MaxiChip High Power Laser Diode on Passive Cu Block Cooler BPC30C-9xx-01 The Bookham BPC30C-9xx-01 MaxiChip laser diode on passive cooler has been designed for direct coupling into a 800µm diameter fiber providing the high brightness required for

C915

Abstract: transistor c915 BPC80C-915-01 BPC80C-940-01 BPC80C-980-01
Contextual Info: Data Sheet Preliminary 80W 9xxnm 30% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC80C-9xx-01 The Bookham BPC80C-9xx-01 30% fill factor laser diode bar on passive cooler series has been designed to provide the increased brightness and reliability required for collimated

2 Wavelength Laser Diode

Abstract: laser diode laser diode 780 nm BPC40C-806-01 bookham diode
Contextual Info: Data Sheet 40W 806nm 30% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC40C-806-01 The Bookham BPC40C-806-01 30% fill factor laser diode bar on passive cooler series has been designed to provide the high output power and high reliability required for both

Contextual Info: DATA SHEET LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.

Contextual Info: SIEMENS SFH 483401 SFH 483406 GaAlAs-LASER DIODE 1000 mW WITH FC-CONNECTOR 750 m W 2 Package Dimensions in mm SFH 483401 1 2 3 4 SFH 483406 11.7 ±0 3 NC NTC NTC laserdiode Cathode 5 6 7 8 Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode NC ' 59