DIODE BOS Search Results

SLD323

Abstract: 808 nm 100 mw SLD300 SLD323V SLD323V-1 SLD323V-2 SLD323V-21 SLD323V-24 SLD323V-25 SLD323V-3
Contextual Info: SONY SLD323V High Power Density 1 W Laser Diode Package Outiine_ Unit : mm Description The SLD323V is a high power, gain-guided laser diode produced by MOCVD m ethod*'. Compared to the R*r* SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

BOSCH diode

Abstract: bosch 25 amp diode press-fit diode Diode pressfit 5 amp diode diode, 305 BOSCH 0 2 Diode press-fit
Contextual Info: RENARD MANUFACTURING 47E CO D 7b71057 QOOOlbl DIODES b'ìS H R E N - \ - 19 1/2" Press-Fit Hermetically Sealed Diodes for BOSCH #7990 Pos. 1/2" original Bosch type, press-fit diode, 200 volt, 35 amp, 1 milliamp with long flexible lead #7991 Neg. 1/2" original Bosch type, press-fit diode, 200 volt,

zener diode RD2.2S

Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ

varactor diode AM

Abstract: SVC347 En58
Contextual Info: Ordering number : EN5816 Silicon Diffused Junction Type SVC347 Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • Twin type varactor diode for AM electronic tuning use. unit: mm • Miniaturization and high-integration of tuner sets can be

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

B-408 diode

Abstract: MIL-STD-883 method 3015 15kV
Contextual Info: PRELIMINARY CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge

smd diode 74a

Abstract: IEC1000-4-2 uPD72011 SC-76 SC-78 smd diode 2d smd diode 6D smd lg diode PD7201 SC5915
Contextual Info: E.S.D NOISE CLIPPING DIODE SERIES November 1998 E.S.D NOISE CLIPPING DIODES The absorption device for Electrostatic Discharge and Surge NNCD is the diode developed for the absorption device for ESD Electrostatic Discharge and surge. Recently, necessity of complying with the EMC (Electromagnetic Compatibility) regulation

SLD301V-21

Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
Contextual Info: SLD301V SONY lO O m W High Power Laser Diode Description Package O utline U nit: mm SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current

TC1617

Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
Contextual Info: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs

Contextual Info: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Contextual Info: STTA2512P TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V trr (typ) 60ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Contextual Info: STTA812D/DI/G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 1200V trr (typ) 50ns Vf 2.0V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

200B

Abstract: TC1068 TC1068MQR TCM1617EV TCN75
Contextual Info: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs

Contextual Info: S IE M E N S Silicon Switching Diode Array B A V 74 • For high-speed switching • Common cathode Typ e Marking Ordering Code tape and reel B A V 74 JAs Q62702-A693 Pin Configuration Package1* 3 SOT-23 EH-I- K l ° EHA07004 Maximum Ratings per Diode Parameter

TMBYV10-20

Abstract: diode B05
Contextual Info: {Z T S G S -T H O M S O N * 7#. fflD tg œ iL IM O iO lg i T M B Y V 10-2 0 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode

Contextual Info: SLD302B SONY. Block-type 200mW High Power Laser Diode Description Package Outline U nit : mm SLD 302B is a high power laser diode m ounted on a 3 x 3 x 5mm Copper block. It is ideal fo r a pp lica tio ns w h ich require a m inim al distance between the laser fa ce t and

MPN7380

Contextual Info: METELICS CORP 25E D bOS13S5 QOGDlbfl b •'T'-07- S PIN DIODE CHIPS HIGH POWER SWITCH & ATTENUATOR metelics CORPORATION FEATURES • High Voltage Breakdown to 800 Volts • Glass Passivation • Low Rs, Cj Mesa Construction MAXIMUM RATINGS Power Dissipation

bosch voltage suppressor

Abstract: PFB5022
Contextual Info: PFB5022 THRU PFB5039 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 50A Features 50Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

Contextual Info: PFB3522 THRU PFB3539 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

Contextual Info: Twin Diode Module TDM150 D im . V Baseplate A=Common Anode ¥ Boseplate Common Cathode -W -o o-W- Baseplate D=Doubler Notes: Baseplate: Nickel plated copper, common cathode Microsemi Catalog Number Working Peak Reverse Voltage Repetitive Peak Reverse Voltage

Contextual Info: PFBM3522 THRU PFBM3539 DACO SEMICONDUCTOR CO.,LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp DIODE High Surge Capability High Current Capability Low leakage PRESS - FIT BOSCH Maximum Ratings Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

Contextual Info: BOS058 Series Reflective Object Sensor Description The BOS058 reflective object sensor consists of an infrared emitting diode and an NPN silicon phototransistor in an black plastic housing. The unit is suitable for the detection of paper or and object over a range

Contextual Info: BD3520, BD3524, BD3536 35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 200nA Anode + C Mechanical Data    