DIODE BFE 16 E Search Results

HUL7211

Abstract: Error Diode BFE
Contextual Info: Specifcations Hologram Unit HUL7211 For CD Player / Portable CD Player Features • Low voltage drive (VCC = 3 V) • Built-in I-V conversion amp. • Low power consumption laser diode Error Signal Detection Method Package Code • Focus error signal detection : SSD method

40841

Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
Contextual Info: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

3 beam method

Abstract: 3 beam method CD-R
Contextual Info: Specifications HUH7285 / HUH7286 For CD-R/RW Drives 32 x writing / 48 × reading Features ● (5.0) 3.1±0.4 Reference plane HUH7285: 4 pins HUH7286: 2 pins 0.1 max. (0.52) (2.3) Focus error signal detection: SSD method Tracking error signal detection:

Diode BFE

Abstract: LDHU06-2 HUH7282 HUH7283
Contextual Info: Specifications HUH7282 / HUH7283 For CD-R/RW Drives 24 x writing / 48 × reading Features ● (0.52) HUH7282: 4 pins HUH7283: 2 pins 0.1 max. Reference plane (2.3) Focus error signal detection: SSD method Tracking error signal detection: 3-beam method 0.3 max.

HULT271

Abstract: dvd hologram unit Laser Diode for dvd 400 mW LDHU07
Contextual Info: Specifcations Hologram Unit HULT271 For DVD/CD Drives (Dual wavelength Hologram Unit) Features • One chip two wavelength laser diode enables the reading of DVD/CD in one package • 24 ´ reading of CD, CD-ROM From 4 ´ to 8 ´ reading of DVD, DVD-ROM

CA3096

Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
Contextual Info: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

CA3096

Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
Contextual Info: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

40841

Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

Diode BFE 16 e

Abstract: AC480V
Contextual Info: Series M 50 Diode 60-100 Amp • DIODE Modules S iig fe - High Surge Current Rectifier Circuits Up to 1600 Volt Blocking Standard and thiee-phase diode cinuits incorporate highly e fficie n t th em a l m anagem e n t ta provide high surge capability, extended life, and lelab fe

40841 MOSFET

Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

s5085

Abstract: ULN2803 ULN2804 163n OF ULN2803 ULN28030 transistor S33
Contextual Info: PCI Semiconductor d ULN2803/ULN 2804 High-Voltage, H igh-C urrent D arlington Arrays e s c r ip t io n pairs. All units feature integral clamp diodes for switching rr-ihe ULN2803/2804 series are high-voltage, high-current inductive loads. darington arrays comprised of eight NPN darington

CA3046 equivalent

Abstract: AN5296 Harris CA3018 CA3045
Contextual Info: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to

CA3046 equivalent

Abstract: CA3046 CA3045 Harris CA3046 an5296 CA3018 CA3045F CA3046M CA3046M96
Contextual Info: CA3045, CA3046 S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays May 1994 March 1993 Features Description • Two Matched Transistors: VBE Matched ±5mV; Input Offset Current 2µA Max at IC = 1mA The CA3045 and CA3046 each consist of five general

an5296

Abstract: CA3046 CA3045 "an5296 Application of the CA3018" CA3018 CA3045F CA3046M CA3046M96 CA3046 equivalent "Application of the CA3018"
Contextual Info: CA3045, CA3046 Data Sheet September 1998 File Number 341.4 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to

AN5296 Application note CA3018

Abstract: CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 CA3018A AN5296 Application of the CA3018 Integrated
Contextual Info: S E M I C O N D U C T O R CA3018, CA3018A NS EW DESIG FOR N MENDED OM November 1996 NOT REC General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.

HUL7211

Abstract: DVD optical pick-up assembly HUL7212 HULT276 DVD pickup assembly OPTICAL PICKUP PANASONIC CD CD laser pickup assembly DVD player LASER BURN circuit diagram DVD laser pickup assembly Laser Diode for dvd 400 mW
Contextual Info: 2009 Laser / Hologram Unit for Optical Disk Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

Harris CA3046

Abstract: an5296 d143 T transistor CA3045 HARRIS AN5296 application note ca3046 CA3046 equivalent CA3045 CA3045F CA3046 Harris
Contextual Info: CA3045, CA3046 S E M I C O N D U C T O R General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA Max

AN5296 Application note CA3018

Abstract: AN5296 Application of the CA3018 Integrated an5296 ca3018 "Application of the CA3018" CA3018 an5296 CA3018A Darlington pair IC AN5296 application note Harris CA3018
Contextual Info: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark Semiconductor CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent

an5296

Abstract: CA3045 "an5296 Application of the CA3018" CA3018 CA3045F CA3046 CA3046M CA3046M96 "matched transistor" ic 2716
Contextual Info: CA3045, CA3046 Data Sheet September 1998 File Number 341.4 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to

Contextual Info: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

an5296

Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
Contextual Info: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)

Diode BFE

Contextual Info: Series B-2T, B-2 25-42.5 Amp • SCR/DIODE Modules B ght Standard Grcuits For AC or DC Variable Voltage O utput Up To 15KW Control over power PART NUMBER IDENTIFICATION S e rie s T y p e B-Case style C eram ic Base C u rre n t 5 - 2 5 A m ps 6 - 42.5 A m ps

HUH7290

Abstract: Laser Diode for cd rw hologram unit
Contextual Info: Hologram Unit HUH7290 For DVD Multi Drives [CD write/read] Apparent emitting point 0.3 (3.0) 16 15 14 13 12 11 10 9 3.95±0.15 0.3±0.1 3.95±0.15 7x0.5±0.1=3.5±0.1 φ8.5 +0 -0.05 Therest of molding gate 0.1 max. • Applications • For DVD multi drivers

HUH7288

Abstract: Laser Diode for cd rw DVD LASER BURN circuit diagram Hologram unit for CD-R/RW drivers
Contextual Info: Hologram Unit HUH7288 For DVD Multi Drives [CD write/read] 0.3 (3.0) 16 15 14 13 12 11 10 9 3.95±0.15 0.3±0.1 3.95±0.15 7x0.5±0.1=3.5±0.1 Apparent emitting point φ8.5 +0 -0.05 Therest of molding gate 0.1 max. 12.2±0.3 Apparent emitting point 0.25±0.05