DIODE BFE 16 E Search Results

3 beam method

Abstract: 3 beam method CD-R
Contextual Info: Specifications HUH7285 / HUH7286 For CD-R/RW Drives 32 x writing / 48 × reading Features ● (5.0) 3.1±0.4 Reference plane HUH7285: 4 pins HUH7286: 2 pins 0.1 max. (0.52) (2.3) Focus error signal detection: SSD method Tracking error signal detection:

HULT271

Abstract: dvd hologram unit Laser Diode for dvd 400 mW LDHU07
Contextual Info: Specifcations Hologram Unit HULT271 For DVD/CD Drives (Dual wavelength Hologram Unit) Features • One chip two wavelength laser diode enables the reading of DVD/CD in one package • 24 ´ reading of CD, CD-ROM From 4 ´ to 8 ´ reading of DVD, DVD-ROM

40841

Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

Diode BFE 16 e

Abstract: AC480V
Contextual Info: Series M 50 Diode 60-100 Amp • DIODE Modules S iig fe - High Surge Current Rectifier Circuits Up to 1600 Volt Blocking Standard and thiee-phase diode cinuits incorporate highly e fficie n t th em a l m anagem e n t ta provide high surge capability, extended life, and lelab fe

40841 MOSFET

Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types

CA3046 equivalent

Abstract: AN5296 Harris CA3018 CA3045
Contextual Info: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to

an5296

Abstract: CA3046 CA3045 "an5296 Application of the CA3018" CA3018 CA3045F CA3046M CA3046M96 CA3046 equivalent "Application of the CA3018"
Contextual Info: CA3045, CA3046 Data Sheet September 1998 File Number 341.4 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to

AN5296 Application note CA3018

Abstract: CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 CA3018A AN5296 Application of the CA3018 Integrated
Contextual Info: S E M I C O N D U C T O R CA3018, CA3018A NS EW DESIG FOR N MENDED OM November 1996 NOT REC General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.

Harris CA3046

Abstract: an5296 d143 T transistor CA3045 HARRIS AN5296 application note ca3046 CA3046 equivalent CA3045 CA3045F CA3046 Harris
Contextual Info: CA3045, CA3046 S E M I C O N D U C T O R General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA Max

Diode GFK

Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

Diode GFK

Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

BFK 79

Abstract: diode marking GDE on semiconductor bem diode diode smc bfk Diode GFK 48 gdp 45 diode Diode GFK GFX DIODE Diode BFM bgv DIODE
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

Contextual Info: Hologram Unit HUH7282/HUH7283 For CD-R/RW Drivers Hologram Unit 3.95±0.15 0.3 16 15 14 13 12 11 10 9 φ8.5 +0 -0.05 M Di ain sc te on na tin nc ue e/ d • Features PKG center 1 2 3 4 5 6 7 8 7x0.5±0.1=3.5±0.1 3.95±0.15 0.3±0.1 8.8±0.2 • It is developed real with window structured

Contextual Info: Hologram Unit HUH7285/HUH7286 For CD-R/RW Drivers Hologram Unit 3.95±0.15 0.3 16 15 14 13 12 11 10 9 φ8.5 +0 -0.05 M Di ain sc te on na tin nc ue e/ d • Features PKG center 1 2 3 4 5 6 7 8 7x0.5±0.1=3.5±0.1 3.95±0.15 0.3±0.1 8.8±0.2 • It is developed real with window structured

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

an5296

Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
Contextual Info: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a

marking diode KE

Abstract: diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B CD214C
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series

Contextual Info: Hologram Unit HUH7282/HUH7283 For CD-R/RW Drivers Hologram Unit • It is developed real with window structured high power laser diode, and realized high speed recording • 16 x writing/48 × reading of CD-R/RW possible • Thin 4.0 mm package realizes thin and simple

Diode BFE 16 e

Contextual Info: TOSHIBA TC74LVQ374F/FW/FS Octal D - Type Flip Flop With 3-State Output The TC74LVQ374 is a high speed CMOS OCTAL FLIP FLOP with 3-STATE OUTPUT fabricated with silicon gate and dou­ ble-layer metal wiring C2MOS technology. Designed for use in 3.3 Volt systems, it achieves high

GFX DIODE

Abstract: Diode GFK Gex DIODE DIODE BFT marking code BFM LF bgv DIODE GGV diode ggz diode Diode GHM bdv 83 do
Contextual Info: PL IA NT CO M *R oH S Model CD214C is currently available, although not recommended for new designs. Model SMCJ is preferred. Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts

M68HC11EVBU

Abstract: m68hc11e9 MC68HC11E9FN1 Aptronics CRT Monitor repair schematic EFO-GC8004A4 Buffalo monitor crt 08 3m M68HC11EVB schematic diagram lcd monitor advance 17
Contextual Info: Freescale Semiconductor, Inc. M68HC11EVBU/D REV 3 Freescale Semiconductor, Inc. April 1997 M68HC11EVBU UNIVERSAL EVALUATION BOARD USER’S MANUAL Information contained in this document applies to REVision B M68HC11EVBU Universal Evaluation Boards. MOTOROLA Inc. 1990, 1997; All Rights Reserved

th 2190

Abstract: LA4475 speaker protector VN02 la44 3082-S14HIC dca100 2SU06
Contextual Info: ^Ordering nurnbef:EN 2190C F SAMYO i NO.Z190C M on o lith ic Linear ICs BTL-OCL Power 20VI Amp f o r Car S t lr l- o Use Features - High output; 20W/THD=10i, 15W/TUD=1i • Low distortion: 0.06i / ":;% k - Excellent ripple rejection: 65dB If ,1, _ Low residual noise iRg=0 : 0.09mV

hep 154 silicon diode

Abstract: 437 BGY of hep 154 silicon diode XR BU 3150 MP 9720 ds BFQ 540 application marking code HFr P6KE10A HY 1.5ke series add 5201
Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Transient Voltage Suppression Diodes The Protection Products Group of World Products Inc. is committed to providing the optimum products for your

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET Version 1.1 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90820 Series MB90822/F822/F823/V820 • DESCRIPTION The MB90820 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control