DIODE BAY 19 Search Results

Diode BAY 45

Abstract: Diode BAY 89 41880
Contextual Info: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

Diode BAY 19

Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Contextual Info: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Contextual Info: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j

cafs-220

Abstract: Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic
Contextual Info: Thermal Considerations for the Pentium III processor at 550MHz Heatsinks & Airflow in ATX chassis May 1999 Order Number: 245184-001 Thermal Considerations for the Pentium® III processor Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

ASCOM 48V 150A

Abstract: KS-20472-L1S ASCOM rectifier ED83119 ed83119-30 ED83246-30 KS-22089 KS-20472 h569-429 welding rectifier schematic
Contextual Info: Product Manual H569-429 Select Code 167-792-120 Comcode 107966541 Issue 2 June 1998 Lucent Technologies 600-Ampere, 140-Volt Galaxy Control and Distribution Bay for New and Retrofit 4ESS Applications Notice: Every effort was made to ensure that the information in this

speedometer

Abstract: vehicle Speed Sensor sensor input speedoMETER ODOMETER HIP9020 1N4005 HIP9020AB HIP9020AP diode vo3
Contextual Info: HIP9020 TM Programmable Quad Buffer with Pre and Post Scaler Dividers October 1993 Features Description • Sine Wave Speedometer Input The HIP9020 is a Vehicle Speed Sensor VSS Buffer IC. It receives sinusoidal vehicle speed information from a speedometer signal source. The signal is amplified and

AN9106

Abstract: HS-65647RH BOSSARD
Contextual Info: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs TM Application Note June 1992 The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the

HIP2106

Abstract: HIP2106IB HIP2106IP IRFR120 MS-001-BA BAY 73 diode
Contextual Info: HIP2106 TM Data Sheet August 1999 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver Features • Drives N-Channel MOSFET Half Bridge The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The low-side and high-side gate drivers are

54LS

Contextual Info: CD54HC00/3A CD54HCT00/3A S E M I C O N D U C T O R Quad 2-Input NAND Gate June 1997 Description Functional Diagram This device is fully compliant to the requirements of paragraph 1.2.1 of MIL-STD-883. 1 14 2 13 3 12 4 11 5 10 6 9 7 8 1A The CD54HC00/3A and CD54HCT00/3A logic gates utilize

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

54LS

Abstract: GDIP1-T16
Contextual Info: CD54HC42/3A CD54HCT42/3A S E M I C O N D U C T O R BCD-to-Decimal Decoder 1-to-10 June 1997 Description Functional Diagram This device is fully compliant to the requirements of paragraph 1.2.1 of MIL-STD-883. 1 A0 The CD54HC42/3A and CD54HCT42/3A BCD-to-Decimal

Voltage Regulator LM78L09 TO-92 package

Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Contextual Info: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of

Contextual Info: HIP1031 HARRIS S E M I C O N D U C T O R Half Amp High Side Driver with Overload Protection November 1994 Features Description • Over Operating Range: -40°C to +125°C The HIP1031 is a High Side Driver Power Integrated Circuit designed to switch power supply voltage to an output load. It

54LS

Contextual Info: CD54HC112/3A CD54HCT112/3A S E M I C O N D U C T O R Dual J-K Flip-Flop with Set and Reset June 1997 Description Functional Diagram This device is fully compliant to the requirements of paragraph 1.2.1 of MIL-STD-883. 1S 1J The CD54HC/HCT112/3A utilizes silicon-gate CMOS technology to achieve operating speeds equivalent to LSTTL

Contextual Info: HIP1031 HARRIS S E M I C O N D U C T O R Half Amp High Side Driver with Overload Protection December 1994 Features Description • Over Operating Range: -40°C to +125°C - 1,0V Max VSAT at 0.6A - 4.5V to 25V Power Supply Range The HIP1031 is a High Side Driver Power Integrated Circuit

KAPPA RELAY

Abstract: AN8610 HIP0061 HIP0061AS1 HIP0061AS2 6v ls1 relay
Contextual Info: HIP0061 TM 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The

Contextual Info: CD54HC533/3A CD54HCT533/3A S E M I C O N D U C T O R Octal Transparent Latch, Three-State, Inverting June 1997 Description Functional Diagram This device is fully compliant to the requirements of paragraph 1.2.1 of MIL-STD-883. D0 D1 The CD54HC533/3A and CD54HCT533/3A are high-speed

Contextual Info: CD54HC00/3A CD54HCT00/3A HARRIS S E M I C O N D U C T O R Quad 2-Input NAND Gate Jun e 1997 Description Functional Diagram This de vice is fu lly c o m p lia n t to the req uire m en ts o f p a ra ­ graph 1.2.1 o f M IL-S T D -883. T he C D 5 4 H C 0 0 /3 A and C D 5 4 H C T 0 0 /3 A logic ga tes utilize