DIODE BAY 19 Search Results

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 55

Abstract: Bay Linear 4N600 4N600S 4N600T 4N6003600 DSA0083437
Contextual Info: Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor Description 4N600 3600 Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications

cafs-220

Abstract: Seasonic ss series Seventeam power supply Thermotron ST-251HR SS-235PS teac fd 235hf testo anemometer teac FD 5.25 seasonic
Contextual Info: Thermal Considerations for the Pentium III processor at 550MHz Heatsinks & Airflow in ATX chassis May 1999 Order Number: 245184-001 Thermal Considerations for the Pentium® III processor Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any

speedometer

Abstract: vehicle Speed Sensor sensor input speedoMETER ODOMETER HIP9020 1N4005 HIP9020AB HIP9020AP diode vo3
Contextual Info: HIP9020 TM Programmable Quad Buffer with Pre and Post Scaler Dividers October 1993 Features Description • Sine Wave Speedometer Input The HIP9020 is a Vehicle Speed Sensor VSS Buffer IC. It receives sinusoidal vehicle speed information from a speedometer signal source. The signal is amplified and

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

Contextual Info: CD54HC533/3A CD54HCT533/3A S E M I C O N D U C T O R Octal Transparent Latch, Three-State, Inverting June 1997 Description Functional Diagram This device is fully compliant to the requirements of paragraph 1.2.1 of MIL-STD-883. D0 D1 The CD54HC533/3A and CD54HCT533/3A are high-speed

Contextual Info: CD54HC00/3A CD54HCT00/3A HARRIS S E M I C O N D U C T O R Quad 2-Input NAND Gate Jun e 1997 Description Functional Diagram This de vice is fu lly c o m p lia n t to the req uire m en ts o f p a ra ­ graph 1.2.1 o f M IL-S T D -883. T he C D 5 4 H C 0 0 /3 A and C D 5 4 H C T 0 0 /3 A logic ga tes utilize

HC LS IC

Abstract: HC-5509B3999-003 HC9P5509B3999-003 2wire 4wire
Contextual Info: HC-5509B3999-003 TM SLIC Subscriber Line Interface Circuit March 1996 tle 9B 9 IC er r- Features Description • DI Monolithic High Voltage Process • Compatible with Worldwide PBX and CO Performance Requirements • Controlled Supply of Battery Feed Current with Programmable Current Limit

DG4410

Abstract: DG441DY DG442 DG442DJ DG201A DG202 DG441 DG441DJ dg4420
Contextual Info: DG441, DG442 TM Data Sheet June 1999 Monolithic, Quad SPST, CMOS Analog Switches Features • ON Resistance Max . . . . . . . . . . . . . . . . . . . . . . . . . 85Ω The DG441 and DG442 monolithic CMOS analog switches are drop-in replacements for the popular DG201A and

HVL388CM

Contextual Info: HVL388CM Variable Capacitance Diode for VCO REJ03G0229-0100Z Rev.1.00 May 19, 2004 Features • High capacitance ratio. n = 1.880 min • Low series resistance. (rs = 0.75 Ω max) • Thin Extremely small Flat Package (TEFP) is suitable for surface mount design.

HVD388C

Contextual Info: HVD388C Variable Capacitance Diode for VCO REJ03G0362-0100Z Previous: ADE-208-1531 Rev.1.00 May 19, 2004 Features • High capacitance ratio. (n = 1.88 min) • Low series resistance. (rs = 0.75 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

FET 4900

Abstract: H5N2519P H5N2519P-E
Contextual Info: H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings

Contextual Info: Preliminary Datasheet RJK4518DPK R07DS0132EJ0200 Previous: REJ03G1529-0100 Rev.2.00 Sep 08, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.11  typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C)  Low leakage current

RJK0304DPB

Abstract: RJK0304DPB-00-J0
Contextual Info: RJK0304DPB Silicon N Channel Power MOS FET Power Switching REJ03G1352-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 4.0 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJL5020DPK R07DS0239EJ0500 Previous: REJ03G1733-0400 Rev.5.00 Jan 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.105  typ. (at ID = 19 A, VGS = 10 V, Ta = 25C)

Contextual Info: UM10478 High-efficiency UBA3070 4-channel DC-to-DC LED driver demo board Rev. 2 — 24 May 2012 User manual Document information Info Content Keywords UBA3070, street, high bay lighting Abstract This document explains the operation and application of the UBA3070

Contextual Info: jg H a r r is D G 4 0 1 , D G 4 0 3 S E M I C O N D U C T O R D G 4 0 5 December 1994 M o n o lit h ic C M O S A n a lo g S w it c h e s Features Description • ON-Resistance <35i2 The DG401, DG403 and DG405 monolithic C M O S analog switches have TTL and C M O S compatible digital inputs.

Contextual Info: Preliminary Datasheet RJK5035DPP-E0 500V - 10A - MOS FET High Speed Power Switching R07DS0609EJ0100 Rev.1.00 Mar 19, 2012 Features • Low on-resistance RDS on = 0.715  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

RJH60D7DPQ-E0

Contextual Info: Preliminary Datasheet RJH60D7DPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0740EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D5DPM 600V - 37A - IGBT Application: Inverter R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D6DPK 600V - 40A - IGBT Application: Inverter R07DS0164EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)