DIODE BAS JS V Search Results

DIODE TA 70/04

Abstract: Q62702-A846 TA 70/04 DIODE BAS JS v marking code 76s schottky 73s Q62702-A118 Q62702-A711 Q62702-A730 Q62702-A774
Contextual Info: Silicon Schottky Diodes BAS 70 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIODE 4004

Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIODE 4004

Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

44S DIODE

Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Contextual Info: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

MARKING 74s

Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708

Contextual Info: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Contextual Info: IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) V 0.0075 Ω 37 nC 15 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification

sot23 js marking

Abstract: BAS20 BAS21 DIODE BAS JS v
Contextual Info: BASI9/BAS20 BAS21 1 Surface M o u n t S w itching Diode SWITCHING DIODE 200mA MPERS 120-250VO ITS Features: *F ast S w itc h in g S peed •S u rfa c e M o u n t P ackage Id e a lly S u ite d fo r A u to m a tic In s e rtio n *H ig h C o n d u c ta n c e *F or G eneral P u rp o se S w itc h in g A p p lic a tio n s

Contextual Info: IRF7406PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) Q g (max) ID -30 V 0.045 Ω 59 nC -5.8 (@TA = 25°C) A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: MCC SMALL SIGNAL SCHOTTKY DIODES OPERATING/STORAGE TEMPERATURE RANGE: -55 *0 TO 125°C Peak Reverse Voltage PRV Marking Code MCC Part Number Maximum Reverse Current VpK V Surge Current 1 Second Pulse Maximum Forward Voltage Drop Capacitance Ir V F @ If V f @ lF

IRF7331TRPBF-1

Contextual Info: IRF7331PbF-1 HEXFET Power MOSFET VDS RDS on max 20 V (@VGS = 4.5V) mΩ RDS(on) max 45 (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 30 13 nC 7.0 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

Contextual Info: IRF7380PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID 80 V 73 15 S1 1 8 D1 mΩ G1 2 7 D1 nC S2 3 6 D2 G2 4 5 D2 3.6 (@TA = 25°C) A SO-8 Top View Applications l High frequency DC-DC converters Features Industry-standard pinout SO-8 Package

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

Contextual Info: IRF7410PbF-1 HEXFET Power MOSFET VDS -12 RDS on max V 7 (@VGS = -4.5V) RDS(on) max 9 (@VGS = -2.5V) RDS(on) max mΩ 13 (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) 91 nC -16 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package

MG30G2YL1

Contextual Info: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3

DIODE Sl

Contextual Info: Bridge Diode Low Noise type Single In-line Package • W IN -ä sia OUTLINE DIMENSIONS D6SB60L TO 600V 6A 45 £1 • » s ü s iP A ’ s / ' r - y •U L1S W UL File No,E 1 4 2 4 2 2 m n -n x m *- y*J RATINGS Absolute Maximum Ratings (fêÆ £v'Srê- T c=25°C )

Contextual Info: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOS V 2 S J 40 2 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS TO-22QFL 4 V Gate Drive

MG200H1AL1

Abstract: T-52-13-25
Contextual Info: TOSHIBA {DISCRETE/OPTOJ 5b 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTO N POWER MODULE)_ D E § TCHTSSG □□00237 5 f bt>C 08237 T-52-13-25 MG200H1AL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

Contextual Info: TO SHIBA YTAF830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV Y T A F R 3 fl HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 —I ^

Contextual Info: IRF7342PbF-1 HEXFET Power MOSFET VDS -55 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V S1 1 8 D1 G1 2 7 D1 3 6 D2 4 5 D2 0.105 Ω 26 nC S2 -3.4 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: IRF7404PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -4.5V) Qg ID (@TA = 25°C) -20 V 0.04 Ω 50 nC -6.7 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

IRF7456TRPBF

Contextual Info: IRF7456PbF-1 SMPS MOSFET VDS RDS on max (@VGS = 10V) 20 V 0.0065 Ω 41 nC 16 A Qg (typical) ID (@TA = 25°C) HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification