DIODE BAS JS V Search Results
DIODE BAS JS V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE BAS JS V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DIODE TA 70/04
Abstract: Q62702-A846 TA 70/04 DIODE BAS JS v marking code 76s schottky 73s Q62702-A118 Q62702-A711 Q62702-A730 Q62702-A774
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Q62702-A118 OT-23 Q62702-A730 Q62702-A711 Q62702-A774 DIODE TA 70/04 Q62702-A846 TA 70/04 DIODE BAS JS v marking code 76s schottky 73s Q62702-A118 Q62702-A711 Q62702-A730 Q62702-A774 | |
DIODE 4004
Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
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Q62702-D339 OT-23 Q62702-D980 Q62702-D979 Q62702-D978 DIODE 4004 diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode | |
DIODE 4004
Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
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Q62702-D339 OT-23 Q62702-D980 Q62702-D979 Q62702-D978 DIODE 4004 Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE | |
44S DIODE
Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
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0-04W 0-05W 0-06W Q62702-A1065 Q62702-A1066 Q62702-A1067 OT-323 44S DIODE Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720 | |
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol |
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Q62702-A95 Q62702-A113 Q62702-A79 OT-23 | |
MARKING 74s
Abstract: PF 7004S
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70-04S VPS05604 70-04S Q62702-A3468 OT-363 MARKING 74s PF 7004S | |
Contextual Info: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708 |
OCR Scan |
Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95 Q62702-A113 Q62702-A79 3AS19 fl23b320 | |
Contextual Info: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free |
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IRF7309PbF-1 IRF7309TRPr D-020D | |
Contextual Info: IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) V 0.0075 Ω 37 nC 15 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification |
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IRF7455PbF-1 D-020D | |
sot23 js marking
Abstract: BAS20 BAS21 DIODE BAS JS v
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OCR Scan |
BASI9/BAS20 BAS21 OT-23 MIL-STD-202. 008grams 200mA 120-250VOLTS OT-23 Cha100 sot23 js marking BAS20 BAS21 DIODE BAS JS v | |
Contextual Info: IRF7406PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) Q g (max) ID -30 V 0.045 Ω 59 nC -5.8 (@TA = 25°C) A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques |
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IRF7406PbF-1 IRF7406TRPbF-1 D-020D | |
Contextual Info: MCC SMALL SIGNAL SCHOTTKY DIODES OPERATING/STORAGE TEMPERATURE RANGE: -55 *0 TO 125°C Peak Reverse Voltage PRV Marking Code MCC Part Number Maximum Reverse Current VpK V Surge Current 1 Second Pulse Maximum Forward Voltage Drop Capacitance Ir V F @ If V f @ lF |
OCR Scan |
BAT54 BAT54A BAT54C BAT54S DO-35 BAT45 BAT46 100nA BAT85 | |
IRF7331TRPBF-1Contextual Info: IRF7331PbF-1 HEXFET Power MOSFET VDS RDS on max 20 V (@VGS = 4.5V) mΩ RDS(on) max 45 (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 30 13 nC 7.0 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package |
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IRF7331PbF-1 IRF73er D-020D IRF7331TRPBF-1 | |
Contextual Info: IRF7380PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID 80 V 73 15 S1 1 8 D1 mΩ G1 2 7 D1 nC S2 3 6 D2 G2 4 5 D2 3.6 (@TA = 25°C) A SO-8 Top View Applications l High frequency DC-DC converters Features Industry-standard pinout SO-8 Package |
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IRF7380PbF-1 IRF73e | |
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IRF7907PBFContextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications |
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IRF7907PbF-1 IRF7907PBF | |
Contextual Info: IRF7410PbF-1 HEXFET Power MOSFET VDS -12 RDS on max V 7 (@VGS = -4.5V) RDS(on) max 9 (@VGS = -2.5V) RDS(on) max mΩ 13 (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) 91 nC -16 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package |
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IRF7410PbF-1 D-020D | |
MG30G2YL1Contextual Info: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3 |
OCR Scan |
MG30G2YL1 50i------------------------------ 77--r MG30G2YL1 | |
DIODE SlContextual Info: Bridge Diode Low Noise type Single In-line Package • W IN -ä sia OUTLINE DIMENSIONS D6SB60L TO 600V 6A 45 £1 • » s ü s iP A ’ s / ' r - y •U L1S W UL File No,E 1 4 2 4 2 2 m n -n x m *- y*J RATINGS Absolute Maximum Ratings (fêÆ £v'Srê- T c=25°C ) |
OCR Scan |
D6SB60L 50HzIE& J514-5 DIODE Sl | |
Contextual Info: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOS V 2 S J 40 2 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS TO-22QFL 4 V Gate Drive |
OCR Scan |
2SJ402 O-22QFL | |
MG200H1AL1
Abstract: T-52-13-25
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T-52-13-25 MG200H1AL1 MG200H1AL1 T-52-13-25 | |
Contextual Info: TO SHIBA YTAF830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV Y T A F R 3 fl HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 —I ^ |
OCR Scan |
YTAF830 | |
Contextual Info: IRF7342PbF-1 HEXFET Power MOSFET VDS -55 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V S1 1 8 D1 G1 2 7 D1 3 6 D2 4 5 D2 0.105 Ω 26 nC S2 -3.4 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques |
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IRF7342PbF-1 IRF7342TRPbF-1 TD-020D | |
Contextual Info: IRF7404PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -4.5V) Qg ID (@TA = 25°C) -20 V 0.04 Ω 50 nC -6.7 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques |
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IRF7404PbF-1 IRF7404TRPbF-1 D-020D | |
IRF7456TRPBFContextual Info: IRF7456PbF-1 SMPS MOSFET VDS RDS on max (@VGS = 10V) 20 V 0.0065 Ω 41 nC 16 A Qg (typical) ID (@TA = 25°C) HEXFET Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification |
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IRF7456PbF-1 TD-020D IRF7456TRPBF |