DIODE BA 683 Search Results

tunable laser diode

Contextual Info: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

883Q

Abstract: PX10160E 19275
Contextual Info: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

NX8571SCxxxQ-BA

Contextual Info: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

nec nx8562

Contextual Info: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

MAF100

Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Contextual Info: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk

ba682

Abstract: diode marking code 682 BA683 MAF100
Contextual Info: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking

BA389 PIN Diode

Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Contextual Info: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure

BA1405F

Abstract: BA1335 BA6U BA8221 BA34168L ba843 BA8221AN BA3528FP 4236L BA-1320
Contextual Info: ICs for Audio Applications Block Diagram of Typical Applications 3V FM/AM stereo headphone system Front end B A 4425 20mW X 2 Mute sensor Í B A 3708 j VD 3V 32 n f HEADPHONES Stereo double cassette recorder system with radio and CD player IF+MPX U tM P X

BA682

Abstract: BA683 f 9370
Contextual Info: BA682.BA683 TELEFUNKEN Semiconductors Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9371 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage

BA682

Abstract: BA683
Contextual Info: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683

DIODE ba 683

Abstract: TELEFUNKEN diode BA682 BA683
Contextual Info: BA682.BA683 Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications Band switching in VHF–tuners 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current

Contextual Info: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683

BA682

Abstract: BA683 DIODE ba 683
Contextual Info: BA682.BA683 Vishay Semiconductors Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682

BA682

Abstract: BA683
Contextual Info: BA682.BA683 Vishay Telefunken Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance Applications 94 9371 Band switching in VHF–tuners Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage

BA682

Abstract: BA683 semiconductor band color code
Contextual Info: BA682/BA683 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF-tuners Mechanical Data

Contextual Info: BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead Pb -free component Component in accordance to RoHS 2002/95/EC

BA683-GS08

Abstract: BA682 BA682-GS08 BA683
Contextual Info: BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BA682/BA683 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF-tuners Mechanical Data

BA 682

Abstract: BA682 BA682-GS08 BA683 BA683-GS08
Contextual Info: BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead Pb -free component Component in accordance to RoHS 2002/95/EC

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

HCT651

Abstract: HCT652
Contextual Info: r= T S G S -T H O M S O N * 7 # « RiflDigMIlLllCTSMO ^ M 54/74HCT651 M 54/74H C T652 HCT651 OCTAL B U S TRANSCEIVER/REGISTER 3-STATE, INV. HCT652 OCTAL B U S TRANSCEIVER/REGISTER (3-STATE) • LOW POWER DISSIPATION ICC = V A (MAX.) at T a = 2 5°C ■ COMPATIBLE W ITH TTL OUTPUTS

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

74HCT651

Contextual Info: /S T * 7 #» S G S -T H O M S O N 6S lO W IIL Il© ir » H B E i M 54 / 7 4 H C T 651 M 54/74H C T652 HCT651 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HCT652 OCTAL BUS T RANSCEIVER/REGISTER (3-STATE) • LOW POWER DISSIPATION |cc = 4piA (MAX.) at TA = 25°C