DIODE BA 100 Search Results

diode LZ. 02

Abstract: diode LZ. 58 BZX88 BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67
Contextual Info: MICROE SILICON PLANAR HIGH-SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature T yp e Description M ax. V RWM Volts BA W 63 BAW 63A BA W 63B B A W 64 B A W 65 BA W 66 BA W 67 BA W 68 Single diode Single diode Single diode C o m m on cathode diode pair

diode BA 159

Contextual Info: BA 157.BA 159 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V

FMMD6050

Abstract: FMMD914 BAW* diode BAL99 BAR99 BAV70 BAV74 BAV99 ZC830A ZC831A
Contextual Info: SOT 23 TRANSISTORS & DIODES SELECTIO N GUIDE SILICO N P LA N A R HIGH SP EED SW ITCH IN G D IO D ES Rat ings Description Type B A S 16 FMMD914 HD3A BA L99 BA R99 FMMD6050 BAV70 BAV74 HD2A BAV99 BA W S6 HD4A Single diode Single diode Single diode Single diode

NX8571SCxxxQ-BA

Contextual Info: DATA SHEET LASER DIODE NX8571SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

nec nx8562

Contextual Info: DATA SHEET LASER DIODE NX8570SCxxxQ-BA 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570SCxxxQ-BA is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

BA 30 C

Contextual Info: BA 597 Silicon PIN Diode • RF switch, RF attenuator for frequencies 2 above 10 MHz 1 • Very low IM distortion VPS05176 Type Marking Pin Configuration Package BA 597 A 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR

BA 6109

Contextual Info: Drivers for Motors with Reversible Brushes BA 610 9 BA 6 2 0 9 BA 6 2 0 9 N The BA6109, 1. 6 A on BA6209. BA6209 the input and diode. BA6209N a SIP is BA6209N provide BA6209N . logic regulation and (two The output inputs). 10-pin compact output modes The

Contextual Info: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

Contextual Info: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954

Contextual Info: BA 157.BA 159 ,2 Axial lead diode Fast silicon rectifier diodes BA 157.BA 159 Forward Current: 1 A Reverse Voltage: 400 to 1000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

Contextual Info: SIEMENS Silicon PIN Diode BA 586 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 586 white P Q62702-A930

Contextual Info: SIEMENS Silicon PIN Diode BA 886 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 886 PC Q62702-A932

GP 023 DIODE

Abstract: GP 005 DIODE
Contextual Info: BA 895 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications 2 • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners 1 VES05991 Type Marking Pin Configuration Package BA 895 R

SD833

Contextual Info: SD833-03 30V / 3.0A Outline drawings, mm 0.2 1.2 max. 0.8 4.0 BA 5.0 0.8 SCHOTTKY BARRIER DIODE 1.5 2.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark BA Applications Type No Lot. No

592 diode

Abstract: BA592
Contextual Info: BA 592 Silicon RF Switching Diode 2 • For VHF band switching in TV / VTR tuners 1 • Low forward resistance, small capacitance small inductance VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BA 592 blue S 1=C SOD-323 2=A Maximum Ratings Parameter

Contextual Info: Silicon PIN Diode fi23b32Q 001bH7Q s aisip _ SIEM ENS/ SPCLi SEMICONDS BA 88S 32E D • Current-controlled RF resistor for RF attenuators • Frequency range: 1 MHz.2 GHz • Especially useful as antenna switch in TV-sat tuners Type BA 885 Ordering code

Contextual Info: T Silicon RF Switching Diode 32E D • 023b32Q Q01b4bb 3 n-iz BA 582 I SIP SIEMENS/ SPCL-, SEMICONDS • Low-loss VHF band switch for TV/VTR tuners Cathode Type Marking Ordering code taped Package BA 582 blue/S Q62702-A829 SOD-123 Maximum Ratings Parameter

S1912

Abstract: 1S1912 smd diode JS BA277 smd diode S4 s4 79 diode smd Diode S4 10 35 DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 277 FEATURES • Small plastic SMD package · Continuous reverse voltage: max. 35 V · Continuous forward current: max. 100 mA · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 Ω.

BA111

Abstract: 741532 TFK U 111 B ba capacitance diode TUNER Ba 111
Contextual Info: BA 111 Silizium-Diffusions-Kapazitäts-Diode Silicon diffusion capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Tunern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm |L II .- J - -2 6 - - 1 1

Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION

diode s4

Abstract: smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits.

DIODE S4 08

Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners

BA173

Abstract: DIODE BA173 74915 TFK 450 tfk 843 diode s .* tfk TFK diode
Contextual Info: BA 173 'V Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Klemmschaltungen In Farb-FS-Geräten mit hohen Betriebsspannungen Applications: Clamping circuits in colour TV-receivers, with high supply voltage Abmessungen in mm Dimensions In mm KATH OD E

Contextual Info: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits.