DIODE B9 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

semikron SKN 71

Abstract: diode 5d9 5d-9 RECTIFIER DIODE gleichrichter
Contextual Info: SKN 71 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Rectifier Diode ! !  ! 7 : . 5 ;   /

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Contextual Info: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

Contextual Info: DIODE MODULE DD30GB/KD30GB UL!E76102 M Power Diode Module D D 30 G B series are designed for various rectifier circuits. D D 30 G B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800 V is

Contextual Info: Technische Information / technical information DD600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ $ 1 # % 7 28 6( 1 $ ,-. / ,

germanium rectifier

Abstract: AAY34 K1007
Contextual Info: MICROWAVE MIXER DIODE AAY34 Subm iniature germ anium point-contact m ix e r diode for u se at Q band. QUICK REFERENCE DATA Frequency range 26 to 40 T yp. noise figure GHz 8 .5 dB OUTLINE AND DIMENSIONS X M illim etres B9924 Min. Max. A 6 .6 5 7 .1 6 B 1 .1 7

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

MHC310

Abstract: MHC-310 ua720 SMD MARKING E1 BAT960 EIAJ C-3 marking code b9 MHC311
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability

SMD MARKING E1

Abstract: BAT960
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability PIN DESCRIPTION • Very low forward voltage

N464

Abstract: IHW15N120R3 50gk j127
Contextual Info: IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

IHW20N120R3

Abstract: J127 9127 diode
Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

IHW15N120R3

Abstract: J127 50gk N464 w393
Contextual Info: IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

IHY15N120R3

Abstract: K127
Contextual Info: IHY15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION

Contextual Info: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 3F20 SKR 3F20 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>- @$A BC +( 57DE6 3FG

BAT960

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION

Contextual Info: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A ­Wide zener voltage range selection : 2.0V to 75V ­Surface device type mounting ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate

KDI attenuator

Abstract: GT-0206 MICRO-D CONNECTORS strobe trigger GT attenuator voltage controlled
Contextual Info: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0206 Series PIN Diode Attenuator is an 8/10 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques

marking code 153 DIODE sod 23

Abstract: diode ZENER A8 zener diode n8 X8 diode zener X8 zener ZENER diode Y8 BZT52C2V0K ZENER MARKING C8
Contextual Info: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A —Wide zener voltage range selection : 2.0V to 75V —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

GT attenuator voltage controlled

Abstract: micro-d connectors GT061832 GT attenuator GT-0618 KDI attenuator 3210f
Contextual Info: NEW PRODUCT ANNOUNCEMENT GT Series PIN Diode Attenuators Description: Features: The GT-0618 Series PIN Diode Attenuator is an 8/10 bit digitally controlled voltage variable attenuator optimized for minimum insertion loss while maintaining maximum attenuation range. Using new linearization techniques

diode V6 57

Contextual Info: SKN 60F THYRISTOR BRIDGE,SCR,BRIDGE Stud diode Fast Recovery Rectifier Diode SKN 60F SKR 60F Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>-9 @$A BC &=- BD $EFG &=+-) 1+ 91>-H $EIG

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23