DIODE B63 Search Results

Contextual Info: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type

rs 434 065

Abstract: 434 diode
Contextual Info: SIEMENS BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Pin Configuration Package < Q62702-B631 II CM Ordering Code S3 I! Marking BBY 51 < Type

Contextual Info: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2

b631 transistor

Abstract: S3 marking DIODE b631 Q62702-B631
Contextual Info: BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51 S3 1=A Q62702-B631 Package 2=A 3 = C1/C2 SOT-23

Contextual Info: SIEMENS BBY52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • D esigned for low tuning voltage operation • For V C O 's in mobile com m unications equipment Type Marking Ordering Code Pin Configuration BBY52 S 5s Q62702-B632 1 =A1 Package

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+

TDB6HK180N16RR

Abstract: 6a65
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3

Contextual Info: SANSHA ELECTRIC MFG CO SbE I> • 7 ^ 1 2 4 3 0D00447 SS3 ■ S E M J DIODE MODULE DW F R 50A D W F(R )50A is a non-isolated diode module designed for 3 phase rectification. • • • • If(av) = 50A, VrrM= 400V Easy Construction with Joint-Cathode(F)Type and Joint-Anode(R)Type.

b639

Contextual Info: BB639WS SILICON VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Low series resistance • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure PINNING DESCRIPTION PIN 1 Cathode 2 Anode

marking code, t2

Abstract: BB639WS diode code T2 marking code T2
Contextual Info: BB639WS SILICON VARIABLE CAPACITANCE DIODE Features • High capacitance ratio • Low series resistance • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure PINNING DESCRIPTION PIN 1 Cathode 2 Anode

FR4 substrate antenna

Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
Contextual Info: Application Note No. 049 Discrete & RF Semiconductors DECT Transmit - Receive Switch Using Ultra Small PIN Diodes This application note covers a redesign of a PIN diode switch introduced in application note number 007. It uses Diodes in SCD80 and SOT343 package,

ABB B63

Abstract: MAX3204EETT MAX3206E
Contextual Info: 19-2739; Rev 2; 11/04 Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces The MAX3202E/MAX3203E/MAX3204E/MAX3206E are low-capacitance ±15kV ESD-protection diode arrays designed to protect sensitive electronics attached to

6-TDFN-EP

Abstract: W41A1 W41A MAX3204EETT MAX3206E MAX3208E
Contextual Info: 19-2739; Rev 3; 12/07 Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces Features The MAX3202E/MAX3203E/MAX3204E/MAX3206E are low-capacitance ±15kV ESD-protection diode arrays designed to protect sensitive electronics attached to

W41A

Abstract: ABB B63 MAX3204EETT MAX3206E UCSP MAX3202E MAX3202EEBS-T MAX3208E MAX3203E MAX3203EETT-T
Contextual Info: 19-2739; Rev 3; 12/07 Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed Data Interfaces Features The MAX3202E/MAX3203E/MAX3204E/MAX3206E are low-capacitance ±15kV ESD-protection diode arrays designed to protect sensitive electronics attached to

AN8523S

Abstract: diode b63 AN8523 0000B ecl prescaler sip
Contextual Info: Bipolar Digital ICs • Driver Arrays Function Type No. Input Resistor 0 Output Breakdown Voltage VcE(SUS) Output Current (mA) Output Clamp Diode 500 1.5A 1.5A No Yes No Numbers of Circuits Package No. (V) DN8690 " input active driver (Emitter common) LSTFL Compatible

D400 transistor

Abstract: sod343 transistor D400 microwave antenna 1500 MHz Schaffer transistors D400 AN025 D400R TR400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

sod343

Abstract: diode V6 96 Lambda Semiconductors D400 transistor BAR63 BAR63-03W BAR80 BCR400 BCR400W D400
Contextual Info: Application Note No. 025 Discrete & RF Semiconductors 1400-1600 MHz PIN-Diode Transmit-Receive Switch This application note describes a non-mechanical transmit-receive switch for the PDC 1500 mobile telephone system. Advantages: • • • • • • no power consumption in receive state

ns102

Abstract: D635-15 Samsung SD650-5 650nm 5mw, 9MM knight rider NS102A SD650-5 650nm 5mw, 9MM 650NM laser diode 5mw NM808-30 sniper EPM650-5
Contextual Info: NVG, Inc., - Laser Diodes and Laser Diode Modules LASER MODULES LONG LASER DIODES SHORT WAVELENGTHS WAVELENGTHS NVG, Inc. manufactures laser diodes, laser modules and laser products. Visible and infrared, high and low power. Various wavelengths available - 635, 640, 650, 660, 670, 690, 780, 808, 840, 904, 980

diode b63

Abstract: m 50160 "Power Diode" 6RI50E R605A fuji r605a
Contextual Info: 6-Pack Diode 600/800 V 50 A FUJI POWER DIODE MODULE O u tlin e D ra w in g s Features A ll th e te rm in a ls an d th e m o u n tin g p la te a re e le c tric a lly is o la te d . T h e s e m o d u le s can b e in s ta lle d in th e s a m e c o o lin g fin as o th e r m o d u le s , th u s sa v in g in s ta lla tio n

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

LT 220 diode

Contextual Info: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1