DIODE B31 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

diode rj 93

Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
Contextual Info: IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

laser diode lg

Abstract: transmitter tube 807 LG1625AXF TF1006A
Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide {GaAs laser diode driver to be used with direct modulated laser

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

BA221

Abstract: ba221 d BB533
Contextual Info: N AMER PHILIPS/DISCRETE tTE D A • ^53131 Q02bim äb^ IAPX BA221 GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage Repetitive peak forward current Storage tem perature

Contextual Info: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser

Contextual Info: N AMER PHILIPS/DISCRETE b^E bb53c]31 00Ebl41 flb^ BA221 » APX L GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purposes. Q U IC K R E F E R E N C E D A T A max. 30 max. 400 V Continuous reverse voltage VR Repetitive peak forward current

DIODE GE

Abstract: SDB310WKU D SCHOT MARKIN CODE
Contextual Info: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.

Contextual Info: SDB B310WKU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.

b310 diode

Abstract: B310 SDB310WAU
Contextual Info: SDB B310 0WAU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.

Contextual Info: SDB B310 0WAU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.

DIODE GE

Abstract: SDB310WMU KSD-D5D017-001
Contextual Info: SDB B310W WMU U SCHO OTTKY BAR RRIER DIOD DE Gene eral Pu urpose e Schotttky Ba arrier D Diode Ge eneral De escription n Th hese Schottky barrier diodes d are designed d forr high-speed sw witching app plications, circuit protecction, and vo oltage clam mping.

b310 diode

Abstract: 3B MARKING diode b310 B310
Contextual Info: MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

b310 diode

Abstract: 3B MARKING B310
Contextual Info: MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

b310 diode

Abstract: MBRS3100T3 case 403-03 diode b310 B310
Contextual Info: MBRS3100T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

SMC 403-03

Abstract: case 403-03 MBRS3100 MBRS3100T3G MBRS3100T3 B310
Contextual Info: MBRS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

403 marking

Abstract: MBRS3100T3G case 403 SMC 403-03 NRVBS3100T3G
Contextual Info: MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

45LF

Abstract: 47LF DO-205AC
Contextual Info: Bulletin I2030/A 45L R .D SERIES Stud Version STANDARD RECOVERY DIODES Features 150A Diffused diode High current carrying capability High voltage ratings up to 1600V High surge current capabilities Stud cathode and stud anode version Typical Applications

OE00

Abstract: QS34XST253
Contextual Info: QS34XST253 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS SynchroSwitchTM 32:8 Mux/Demux With Active Terminators QS34XST253 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional signal flow

IDTQS34XVH245

Abstract: QS34XVH245
Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC