DIODE B17 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: DIODE ISOLATED MOLD TYPE (F.R.D.) DG20AA-M DG20AA-M is a medium power isolated mould diode suitable for wide range of industrial and home electronics use. DG20AA-M is highly reliable by glass passivation. • High Speed Diode • If(av) = 20A • Tab terminals for easy wiring.

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: DISC T Y P E DIODE SDF4000BA SD F4000BA rectification. is a Flat Pack Diode designed for high power • If av>— 4000A, Vrrm— 1200V • High Reliability by pressure mount construction. (Applications • High Power Rectifier • Welding Power Supply • Maximum Ratings

Contextual Info: DISC TYPE DIODE SDF400QAA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, Vrrm= 600V • High Reliability by pressure mount construction. (Applications) • High Power Rectifier • Welding Power Supply • Rectifier for metal surface treatment

Contextual Info: DIODE I S O L A T E D DG20AA M O LD T Y P E D G 2 0 A A is a medium power isolated mould diode suitable for wide range of industrial and home electronics use. D G 2 0 A A is highly reliable by glass pasivation. I f{avi= 20A, Vrrm= 1600V • Tab terminals for easy wiring.

IDTQS32XVH384

Abstract: QS32XVH384
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC

QS32XL2384

Abstract: QS32XL384
Contextual Info: QS32XL384, QS32XL2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switches QS32XL384 QS32XL2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs

diode A23

Abstract: QS3245 QS34X2245 QS34X245
Contextual Info: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

QS32X2384

Abstract: QS32X384 32x384
Contextual Info: QS32X384, QS32X2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switch QS32X384 QS32X2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

QS32XR384

Abstract: B10-B14
Contextual Info: QS32XR384 QuickSwitch Products High-Speed CMOS 20-Bit Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32XR384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

Contextual Info: IDTQS3VH16862 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT DUAL PORT, HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS3VH16862 DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

diode b29

Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND

Power DIODE A30

Abstract: QS34XR245 b12 diode DIODE B12 41 QS34XR245Q3 QS3R245
Contextual Info: QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit Low Resistance MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

Contextual Info: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS3VH16800 2.5V / 3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS IDTQS3VH16800 DESCRIPTION: FEATURES: • N channel FET switches with no parasitic diode to VCC

Diode B19

Abstract: QS32X861 B10-B19 B9 fet datasheet QS32X2861 32X861
Contextual Info: QS32X861, QS32X2861 QuickSwitch Products High-Speed CMOS 20-Bit Bus Switch With Flow-Thru Pinout Q QUALITY SEMICONDUCTOR, INC. QS32X861 QS32X2861 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

IDTQS34XVH245

Abstract: QS34XVH245 B1065
Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

Contextual Info: IDTQS3VH16800 2.5V / 3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH WITH PRECHARGED OUTPUTS IDTQS3VH16800 DESCRIPTION: FEATURES: • N channel FET switches with no parasitic diode to VCC

Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

IDTQS32XVH384

Abstract: QS32XVH384
Contextual Info: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH IDTQS32XVH384 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions

B29B

Abstract: IDTQS34XVH245 QS34XVH245
Contextual Info: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions