DIODE B12 60 Search Results

DIODE B12 51

Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
Contextual Info: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers

mosfet to92

Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
Contextual Info: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●

DIODE B12 41

Abstract: TSG25N120CN B12 DIODE
Contextual Info: TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

DIODE B12

Abstract: B12 DIODE TSG15N120CN
Contextual Info: TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

TSG40N120CE

Abstract: to264 B12 DIODE IGBT 40A TSG40N DIODE b12 28 DIODE B12 88 DIODE B12
Contextual Info: TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1200 ±20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

Contextual Info: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200

Contextual Info: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e e ls are built into o ne package. • Suited fo r m o to r control ap plications using a ch o pp er co n verter Devic« ly p 'j Veso i V geo VcEO Volts Volts

gardena 6030

Abstract: 6060C SK6030C SK6060C SK6070C
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-6000-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-247AB (TO-3PAB) PACKAGE Low switching noise A C A2 Low forward voltage drop

Contextual Info: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects one birectional I/O line —Working Voltage : 24V —Pb free version, RoHS compliant, and Halogen free

Contextual Info: DIOTEC ELECTRONICS CORP DIG SflE ]> SflMTlD? D D 0 D D3 S 547 « D I X Data Sheet No.: SBDT-6000-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS TQ-24I.ffîfc3Pi

diode b129

Abstract: MAX1820ZEUB
Contextual Info: 19-2011; Rev 3; 4/05 KIT ATION EVALU E L B A IL AVA WCDMA Cellular Phone 600mA Buck Regulators Features The MAX1820/MAX1821 low-dropout, pulse-width-modulated PWM DC-DC buck regulators are optimized to provide power to the power amplifier (PA) in WCDMA cell phones; however, they may be applied in many

Contextual Info: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 marking b12 rectifier diode B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 diode marking code B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: RF2312
 
  

      • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2312 is a general purpose, low cost high linearity

ERB12-02

Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

marking B12 diode SCHOTTKY

Abstract: b12 marking MBRS120T3 B12 DIODE marking B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

AN5337 ca3028

Abstract: AN5337 IC CA 3028A ca3028 CA3028A CA3028AM96 diode L2.8 cascode 120M CA30
Contextual Info: Semiconductor CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent : Call or email CA3028A January 1999 File Number 382.5 Differential/Cascode Amplifier for Commercial and Industrial Equipment

QS74FCT2X3244

Contextual Info: QS74FCT2X3244 3.3V CMOS 16-Bit Buffer/Line Driver Q QUALITY SEMICONDUCTOR, INC. QS74FCT2X3244 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • The FCT2X3244 is a 16-bit buffer/line driver with three-state outputs that is ideal for driving highcapacitance loads as in memory address and data

DIODE B12 41

Contextual Info: ÛUALITY SEMIC ONDUCT OR INC bSE D • 7MbfciöD3 GG013H3 TÔ4 QSFCT16244T, QSFCT162244T Advanced Information Ô High Speed CMOS 16-Bit Buffers QS74FCT16244T QS74FCT162244T FEATURES/BENEFITS • • • • 16-bit Function compatible to the 74F244 74FCT244 and 74FCT244T

DIODE B12 51

Abstract: diode b27 diode b18 DIODE B23 diode b29 a30 DIODE 74ABT244 DIODE B21 millipaqtm QS74FCT4X2244ATQ3
Contextual Info: QS74FCT4X244T, QS74FCT4X2244T Q High-Speed CMOS 32-Bit Buffer in MillipaQ QS74FCT4X244ATQ3 QS74FCT4X244CTQ3 QS74FCT4X2244ATQ3 FEATURES/BENEFITS DESCRIPTION • 32-bit Function compatible to the 74F244 74ABT244, 74FCT244T and 74FCT2244T • QS74FCT4X244T: IOL = 64 mA

millipaq package

Abstract: a30 DIODE DIODE A30
Contextual Info: QS74FCT4X244T, QS74FCT4X2244T High-Speed CMOS Q QO R i t R u f f a c ¿ ¿ - D ll D U TTer QS74FCT4X244ATQ3 QS74FCT4X244CTQ3 in MillipaQ QS74FCT4X2244ATQ3 FEATURES/BENEFITS DESCRIPTION • 32-bit Function compatible to the 74F244 74ABT244, 74FCT244T and 74FCT2244T

DIODE B12 51

Abstract: a30 DIODE DIODE B12 54
Contextual Info: QS74FCT4X244T, QS74FCT4X2244T High-Speed CMOS Ö OO R i t P i i f f a r ¿ ¿ - D l l D U Iie r QS74FCT4X244ATQ3 QS74FCT4X244CTQ3 in MillipaQ QS74FCT4X2244ATQ3 FEATURES/BENEFITS DESCRIPTION • 32-bit Function compatible to the 74F244 74ABT244, 74FCT244T and 74FCT2244T

Contextual Info: NCV7240 Octal Low-Side Relay Driver The NCV7240 is an automotive eight channel low−side driver providing drive capability up to 600 mA per channel. Output control is via a SPI port and offers convenient reporting of faults for open load or short to ground , over load, and over temperature conditions.