DIODE B 4A Search Results

Contextual Info: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Unit : mm Package : 2F D4F60 + 600V 4A Ü 43 f i 2.5 PyHa-t W • B s t t ic f f ln s f lis t t 6.1 Date code Standard soldering pad O iS I fsm C0.8 («fiLtCDSnîEOLYCB:, }£EP tt«£C !B 18<

ixys mcc 40

Abstract: ixys MCC 90 THYRISTOR MODULE MCC 25 44-08io1 44-16io8 44-08io8 MCC 90 14io8 44-12io1 MCC 25 MCC 90
Contextual Info: MCC 44 MCD 44 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 80 A ITAVM = 2x 51 A VRRM = 800-1800 V VRSM VRRM TO-240 AA VDSM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 1 Version 1 B Version 8 B Version 8 B MCC 44-08io1 B MCC 44-12io1 B

Contextual Info: ÖIXYS Thyristor Modules Thyristor/Diode Modules MCC 26 iTRMS = 2 x 50 A MCD 26 ITAVM = 2 x 3 2 A V RRM = 8 - 1 v RRM V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 800 1200 1400 1600 MCC 26-08ÌO1 B MCC 26-12io1 B MCC 26-14io1 B MCC 26-08ÌO8 B

72-08io8

Abstract: mcc 250 thyristor 72-14io1 72-12io8 72-12io1 THYRISTOR MODULE IXYS MCC 96 ixys MCC 21 500A2S 7208IO
Contextual Info: Thyristor Modules Thyristor/Diode Modules MCC 72 ITRMS = 2 x 180 A MCD 72 ITAVM = 2 x 115 A VRRM = 800 - 1800 V TO-240 AA VRSM VRRM Type VDSM VDRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 72-08io1 B MCC 72-12io1 B

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 400V 8A H S S 'iX >trr50ns >SRS;H > ^ B s O A w0 , ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature

Contextual Info: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE

j45ac

Contextual Info: 4 b ô b 2 2 b GDGlbflS ITS « I X Y m xYS MCC220 iTAV= 2 X 250 A MCD220 v RRM= 600-1600 V Thyristor Modules Thyristor/Diode Modules Type V V Version 1 Version 1 | 700 900 1300 1500 1700 600 800 1200 1400 1600 MCC220*06io1 MCC220-08io1 MCC220-12io1 MCC220-14ÍO1

Contextual Info: SBD Z V"J=J SBD Bridge Diode Single In-line Package MM-t&m D4SBS6 OUTLINE DIMENSIONS 60V 4A mmms\pjKytr-v • S B D ?'U "JV • I S Vf • SRI • ^ B s OA •ffliS s FA «n°n±oi^l:ov>t itmvitw.* II < fiÿ RATINGS • fÊ ÎÎIi^ /Ë fè a Item Absolute Maximum Ratings îsÊ &^f|râ-

2050I

Abstract: 1fp3
Contextual Info: Single Diode M1FP3 Schottky Barrier Diode mtmm o u t l i n e ft y - K v - ? 30V 1.29A Cathode m ark _ [P 6 N Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b ÎS V f=0.4V IV I x D .y h ïa ^ - (« T ype No. Dale code Main Use • DCth^ORffl

Contextual Info: - j'j v V ÿ 'C t - F î/y ^ n /'fy ^ 'fy M Bridge Diode Single In-line Package • ^ ^ H l OUTLINE DIMENSIONS D4SB80 SU 800V 4A 45 £1 •» s ü s iP A ’ y 'r - y •UL1SW UL File No,E 1 4 2 4 2 2 •S B Œ * B I fsm MMfàB RATINGS Absolute Maximum Ratings (fê5ë &v>:irô- Tc=25°C)

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LD20U 200V 8A H S S 'i X >trr35ns >SRS;H > ^ B s O A w0, ^ m iB s FA RATINGS Absolute Maximum Ratings a a i E -f- Item — • — — s Symbol Conditions S to ra g e Tem perature O pe ra tin g J u n ctio n Tem perature

KSC5386

Abstract: transistor ksc5386
Contextual Info: KSC5386 KSC5386 High Voltage Color Display Horizontal Deflection Output Damper Diode Built In • • • • Equivalent Circuit High Collector-Base Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs (Typ) B Wide S.O.A For C-Monitor (48KHz)

Contextual Info: PD-2.446 bïtemational S Rectifier HFA140NH60R HEXFREDT Ultrafast, Soft Recovëry Diode LUG TERM INAL CATHO DE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Vr 600V = Vf = 1.6V A i Qrr * = 1400nC

Contextual Info: Ordering number: EN 4567 No.4567 II SB40W03T Schottky B a rrie r Diode Twin Type •Cathode Common SANYO; i 30V, 4A Rectifier A p p lic a tio n s • High frequency rectification (sw itching regulators, converters, choppers). F e a tu r e s • Low forward voltage (Vp max = 0.55V).

D4SB60L

Contextual Info: Bridge Diode Low Noise type Single In-line Package •*WfN-äsH OUTLINE DIMENSIONS Package : 3S D4SB60L TO 600V 4A 45 £1 • * iü s iP A ’ s/$— y •UL1SW UL File No,E 1 4 2 4 2 2 •H B J E E x H I fsm Unit : mm («fiLtCDSnîEOLYCB:, M ì£fàm RATINGS

Contextual Info: B /4 X J U y !f Low Noise Bridge Single In-line Package Bridge Diode •*W fN -äsH OUTLINE DIMENSIONS LN4SB60 TO 600V 4A 45 £1 •U L1S W UL File No,E 1 4 2 4 2 2 •S IP K 'j/ir-y • S I fsm RATINGS Absolute Maximum Ratings 1 a Item Storage Temperature

Contextual Info: • International HU Rectifier 4ÔSSMS5 0 0 1 b 7 4 7 INTERNATIONAL ölß RECTIFIER ■ INR bSE SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F ast re c o v e ry d io d e H igh s u rg e c a p a b ility

Hitachi DSA0095

Abstract: FP-14DA HD74HCT00A TTP-14D hd74hct00 ADE-205-286
Contextual Info: HD74HCT00A Quad. 2–input Positive NAND Gates ADE-205-286 Z 1st. Edition Jun. 1999 Description The HD74HCT00A has four 2-input NAND gates in a 14 pin package. Y = A•B or Y = A + B Features • VCC = 4.5 to 5.5 V operation • Input terminal has protection diode

Contextual Info: -j'j v V ÿ 'C t - F î/y ^ n /'fy ^ 'fy M Bridge Diode Single In-line Package • ^ ^ H l O U T L IN E D IM E N S IO N S Package : 3 S D3SBD ^ 800V 4A •»lÜ S IP A ’ s / ' r - y •UL1SW UL File No,E 14 242 2 Unit : mm («fiLtCDSâSEOLYCB:, }£EPtt«£C!B 18< fc'ÎU )

SHD117022

Contextual Info: SHD117022 P/N SHD117022(P/N)A SHD117022(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4063, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

MJD112

Contextual Info: MJD112 tm NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix Equivalent Circuit C B D-PAK 1 1.Base 2.Collector R1 3.Emitter R2 R1 ≅ 10kΩ R2 ≅ 0.6kΩ

A448

Abstract: YG802N09 YG802C09 a449
Contextual Info: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m o ld in g . • te V F Low V F • Connection Diagram T . A 'V + V 'f Super high speed sw itchin g. • fa it YG 802C 09 High reliability by planer d e s ig n .’ {¿)Q PI

Contextual Info: 4bflb22b □OQlbb'l TS2 H I X Y DIXYS < < < ! I Thyristor Modules Thyristor/Diode Modules V mm Vo», V 500 700 900 1300 1500 1700 1900 400 600 000 1200 1400 1600 1600* MCC72 MCD72 iTAV= 2 x 85 A VRRM= 400-1800 v Type Version 1 B MCC72-064O1 MCC72-08ÌO1 MCC72-12Ì01

Contextual Info: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1