DIODE AR S1 77 Search Results

Contextual Info: S PY0016C SP S Sttep-Up DC/DC Converter Preliminary SEP. 20, 2001 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.

Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO6602

Abstract: uis test
Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4612

Abstract: Complementary diode AR s1 56
Contextual Info: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AO4616

Abstract: 20V P-Channel Power MOSFET 500A
Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Contextual Info: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

3X2A

Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4830

Contextual Info: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A

ao4830

Abstract: AO4830L
Contextual Info: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A

AO4886

Abstract: soic-8 33a 100V N-Channel Power MOSFET 500A
Contextual Info: AO4886 100V Dual N-Channel MOSFET General Description Product Summary VDS The AO4886 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,

AO6802

Abstract: Qg (nC)
Contextual Info: AO6802 30V Dual N-Channel MOSFET General Description Product Summary The AO6802 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V

MZ2L-50R

Abstract: compressor cooper ta 3000 Le78D11 g726 ADPCM algorithm le77d21 Le78D11 Chip Set Users Guide 4148s nichicon gx 080729 VoicePathTM API Le78D110VC
Contextual Info: Le78D11 Integrated Voice Chip Sets VoiceChip Family 770 Series APPLICATIONS ORDERING INFORMATION • Ideal for Short/Medium Loops of ~2000 ft, 26 AWG, and A VoiceChip™ 770 series SLIC device must be used with this part. ■ ■ ■ ■ 5 REN loads Voice over IP/DSL – Integrated Access Devices, Smart

ISS133

Abstract: M8305
Contextual Info: S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID

diode AR S1 77

Abstract: z645
Contextual Info: S T M8500A S amHop Microelectronics C orp. Arp,20 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

Contextual Info: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W )

2sk3443

Abstract: transistor te 468 S2 MARKING TRANSISTOR
Contextual Info: TOSHIBA 2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type rc-MOSV 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mil (typ.) High forward transfer admittance: IYfs I = 9 S (typ.)

AN7421

Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
Contextual Info: National Semiconductor Application Note 742 Chai Vaidya IPG Applications January 1991 INTRODUCTION Today’s digital systems with their higher clock speeds and data throughput must have higher transfer rates to keep the processors running at top speed With these types of circuits it is essential to have high performance bus transceivers which tie together everything on the bus Without specialized bus interface transceivers board designers must

Contextual Info: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other

IF88

Abstract: ao49
Contextual Info: AO4948 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4948 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A

Contextual Info: AO4930 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4930 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A

Contextual Info: AO4948 30V Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4948 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A