DIODE AR S1 77 Search Results
DIODE AR S1 77 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CEZ6V2 |
![]() |
Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
![]() |
Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
![]() |
Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
![]() |
Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
![]() |
Zener Diode, 5.6 V, USM | Datasheet |
DIODE AR S1 77 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: S PY0016C SP S Sttep-Up DC/DC Converter Preliminary SEP. 20, 2001 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. |
Original |
SPY0016C | |
Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. |
Original |
AO4616 AO4616 | |
Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. |
Original |
AO6602 AO6602 100m1 170m1 | |
AO6602
Abstract: uis test
|
Original |
AO6602 AO6602 uis test | |
AO4612
Abstract: Complementary diode AR s1 56
|
Original |
AO4612 AO4612 Complementary diode AR s1 56 | |
AO4616
Abstract: 20V P-Channel Power MOSFET 500A
|
Original |
AO4616 AO4616 20V P-Channel Power MOSFET 500A | |
Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. |
Original |
AON4605 AON4605 110m1 180m1 | |
Contextual Info: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. |
Original |
AO4612 AO4612 | |
AO4830Contextual Info: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A |
Original |
AO4830 AO4830 | |
ao4830
Abstract: AO4830L
|
Original |
AO4830L AO4830L ao4830 | |
Contextual Info: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A |
Original |
AO4830 AO4830 | |
AO6802
Abstract: Qg (nC)
|
Original |
AO6802 AO6802 Qg (nC) | |
Qg (nC)
Abstract: 70°C AO6810 diode AR S1 77 diode AR S1 70
|
Original |
AO6810 AO6810 Qg (nC) 70°C diode AR S1 77 diode AR S1 70 | |
MZ2L-50R
Abstract: compressor cooper ta 3000 Le78D11 g726 ADPCM algorithm le77d21 Le78D11 Chip Set Users Guide 4148s nichicon gx 080729 VoicePathTM API Le78D110VC
|
Original |
Le78D11 44-pin GR-909 MZ2L-50R compressor cooper ta 3000 Le78D11 g726 ADPCM algorithm le77d21 Le78D11 Chip Set Users Guide 4148s nichicon gx 080729 VoicePathTM API Le78D110VC | |
|
|||
diode AR S1 77
Abstract: z645
|
Original |
M8500A diode AR S1 77 z645 | |
Contextual Info: S T M8500A S amHop Microelectronics C orp. J an.23 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S R DS (ON) ( m W ) ID P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -55V -3A R DS (ON) ( m W ) |
Original |
M8500A | |
2sk3443
Abstract: transistor te 468 S2 MARKING TRANSISTOR
|
OCR Scan |
2SK3443 ID-30A 2sk3443 transistor te 468 S2 MARKING TRANSISTOR | |
AN7421
Abstract: AN-742 C1996 DS3875 DS3883A DS3884A DS3885 DS3886A diode AR S1 86 transistor ab2 12
|
Original |
||
Contextual Info: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other |
Original |
AOD608 O-252-4L | |
IF88
Abstract: ao49
|
Original |
AO4948 AO4948 IF88 ao49 | |
Contextual Info: AO4930 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4930 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A |
Original |
AO4930 AO4930 | |
Contextual Info: AO4948 30V Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4948 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A |
Original |
AO4948 AO4948 | |
Contextual Info: AO4948 30V Dual N-Channel MOSFET SRFET General Description Product Summary The AO4948 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A |
Original |
AO4948 AO4948 | |
Contextual Info: AO4938 30V Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4938 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A |
Original |
AO4938 AO4938 |