DIODE AR S1 65 Search Results

Le57D11

Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Contextual Info: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the

P40N03

Abstract: p40n03l diode AR s1 47 P40N03L-20 n mosfet depletion pspice model parameters n mosfet pspice parameters depletion p mosfet n channel depletion MOSFET schematic diagram dc converter 72 v to 12 v STP40N03L-20
Contextual Info: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

n mosfet depletion pspice model parameters

Abstract: P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6
Contextual Info: STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

D20N06

Abstract: TRANSISTOR SDM M6 SDM M6
Contextual Info: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP38N06

Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
Contextual Info: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

n mosfet depletion pspice model parameters

Abstract: TRANSISTOR SDM M6 STP40N03L-20 transistor m6 l6 NMOS depletion pspice model SDM M6 tt20n 19E-02
Contextual Info: STP40N03L-20 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

AO6604

Contextual Info: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4629

Contextual Info: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

AO4629

Abstract: a4751 20V P-Channel Power MOSFET 500A
Contextual Info: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4629L

Contextual Info: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

3X2A

Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

PM45100K

Abstract: PM50100K 0312C
Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

3X2A

Contextual Info: AON4803 20V P-Channel MOSFET General Description Product Summary The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AON4807

Contextual Info: AON4807 30V Dual P-Channel MOSFET General Description Product Summary The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4803A

Contextual Info: AO4803A 30V General Description Dual P-Channel MOSFET Product Summary VDS The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V)

Contextual Info: AO4840 40V Dual N-Channel MOSFET General Description Product Summary The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)

Contextual Info: AON4807 30V Dual P-Channel MOSFET General Description Product Summary The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4838

Contextual Info: AO4838 30V Dual N-Channel MOSFET General Description Product Summary The AO4838 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4803A

Contextual Info: AO4803A 30V Dual P-Channel MOSFET General Description Product Summary The AO4803A uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V

AO4830

Contextual Info: AO4830 80V Dual N-Channel MOSFET General Description Product Summary The AO4830 uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications. VDS (V) = 80V ID = 3.5A

Contextual Info: AO4803 30V Dual P-Channel MOSFET General Description Product Summary The AO4803 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V

ao4830

Abstract: AO4830L
Contextual Info: AO4830L Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4830L uses advanced trench technology to provide excellent RDS ON and low gate charge . This device is suitable for use as a load switch or in PWM applications.