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    D20N06 Search Results

    D20N06 Datasheets (1)

    Shenzhen Heketai Electronics Co Ltd
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HKTD20N06
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET with 60V drain-source voltage, 20A continuous drain current, 37mΩ maximum RDS(on) at VGS=10V, and TO-252 package. Original PDF
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    D20N06 Price and Stock

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    Rochester Electronics LLC FQD20N06LETM

    MOSFET N-CH 60V 17.2A DPAK
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    DigiKey FQD20N06LETM Bulk 44,018 606
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    Rochester Electronics LLC NTD20N06-001

    MOSFET N-CH 60V 20A IPAK
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    DigiKey NTD20N06-001 Bulk 3,436 865
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    onsemi NTD20N06T4G

    MOSFET N-CH 60V 20A DPAK
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    DigiKey () NTD20N06T4G Cut Tape 2,615 1
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    Mouser Electronics () NTD20N06T4G 3,234
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    NTD20N06T4G 3,207
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    TME NTD20N06T4G 2,477 1
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    Richardson RFPD NTD20N06T4G 2,500
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    Avnet Silica NTD20N06T4G 53 Weeks 2,500
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    Rochester Electronics LLC NTD20N06L-001

    MOSFET N-CH 60V 20A IPAK
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    DigiKey NTD20N06L-001 Tube 1,851 443
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    UMW FQD20N06

    MOSFET N-CH 60V 16.8A DPAK
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    DigiKey () FQD20N06 Cut Tape 1,437 1
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    FQD20N06 Digi-Reel 1,437 1
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    D20N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D20N06

    Abstract: TRANSISTOR SDM M6 SDM M6
    Contextual Info: D20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STD20N06 D20N06 100oC 175oC O-251) O-252) O-251 O-252 D20N06 TRANSISTOR SDM M6 SDM M6 PDF

    transistor on 4584

    Abstract: D20N06 369A-13 AN569 MTD20N06HDL h1010
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information D20N06HDL HDTMOS E-FET High Density Power FET DPAK for Surface Mount or insertion Mount • ■ * ■ H M MM H Motorola Preferred Device B M TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS on = 0-045 OHM


    OCR Scan     		PDF