DIODE AR S1 36 Search Results

Le57D11

Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Contextual Info: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the

SKM652

Abstract: SKM692F SKM682F
Contextual Info: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì

D20N06

Abstract: TRANSISTOR SDM M6 SDM M6
Contextual Info: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

diode AR S1 99

Abstract: S3 DIODE schottky 486 smps
Contextual Info: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient

Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

AO6604

Contextual Info: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4616

Abstract: 20V P-Channel Power MOSFET 500A
Contextual Info: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4629L

Contextual Info: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

3X2A

Contextual Info: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Contextual Info: AO4840 40V Dual N-Channel MOSFET General Description Product Summary The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V)

AOD609

Abstract: aod609 datasheet
Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V)

AON7810

Contextual Info: AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V)

Contextual Info: AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 16A

Contextual Info: AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS ID (at VGS=10V)

Contextual Info: ZXM HC6A07T8 COM PLEM ENTARY 60V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V (BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench M OSFETs from Zetex utilizes a unique

Contextual Info: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

AOD603A

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.