DIODE AA111 Search Results

Contextual Info: 11mm x 1.4mm BACK LIGHT AA1114/2YC/CC Features lLOW POWER CONSUMPTION. lIDEAL FOR BACKLIGHTING. YELLOW Description The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package Dimensions

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2YC/CC YELLOW Description Features LOW POWER CONSUMPTION. The Yellow source color devices are made with IDEAL FOR BACKLIGHTING. Gallium Arsenide Phosphide on Gallium Phosphide RoHS COMPLIANT. Yellow Light Emitting Diode. Package Dimensions

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2SGC/CC Features SUPER BRIGHT GREEN Description LOW POWER CONSUMPTION. The Super Bright Green source color devices are made IDEAL FOR BACKLIGHTING. with Gallium Phosphide Green Light Emitting Diode. RoHS COMPLIANT. Package Dimensions

Contextual Info: 11mm x 1.4mm BACKLIGHT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features AA1114/2MBC/CC BLUE Description LOW POWER CONSUMPTION. The Blue source color devices are made with GaN on SiC IDEAL FOR BACKLIGHTING. Light Emitting Diode.

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2SYC/CC SUPER BRIGHT YELLOW Description Features LOW POWER CONSUMPTION. The Super Bright Yellow device is made with DH IDEAL FOR BACKLIGHTING. InGaAlP on GaAs substrate light emitting diode chip. RoHS COMPLIANT. Package Dimensions

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2SGC/CC SUPER BRIGHT GREEN Features Description l IDEAL with Gallium Phosphide Green Light Emitting Diode. l LOW POWER CONSUMPTION. The Super Bright Green source color devices are made FOR BACKLIGHTING. Package Dimensions Notes:

Contextual Info: 11mm x 1.4mm BACKLIGHT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES AA1114/2PBC/CC BLUE Description Features LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN IDEAL FOR BACKLIGHTING. on SiC Light Emitting Diode.

ET 1114

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2SYC/CC Features l LOW Description POWER CONSUMPTION. l IDEAL SUPER BRIGHT YELLOW The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substate Light Emitting FOR BACKLIGHTING. Diode. Package Dimensions

Contextual Info: 11mm x 1.4mm BACKLIGHT Part Number: AA1114/2SYS/CC Super Bright Yellow Features Description z Low power consumption. The Super Bright Yellow device is made with AlGaInP on z Ideal for backlighting. GaAs substrate light emitting diode chip. z RoHS compliant.

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2EC/CC HIGH EFFICIENCY RED Description Features LOW POWER CONSUMPTION. The High Efficiency Red source color devices are IDEAL FOR BACKLIGHTING. made with Gallium Arsenide Phosphide on Gallium RoHS COMPLIANT. Phosphide Orange Light Emitting Diode.

Contextual Info: 11mm x 1.4mm BACK LIGHT AA1114/2EC/CC HIGH EFFICIENCY RED Features Description l IDEAL made with Gallium Arsenide Phosphide on Gallium l LOW POWER CONSUMPTION. The High Efficiency Red source color devices are FOR BACKLIGHTING. Phosphide Orange Light Emitting Diode.

s468

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2PBC/CC BLUE Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN !IDEAL FOR BACKLIGHTING. on SiC Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters inches .

Contextual Info: 11mm x 1.4mm BACKLIGHT Part Number: AA1114/2YS/CC Yellow Features Description z Low power consumption. The Yellow source color devices are made with Gallium z Ideal for backlighting. Arsenide Phosphide on Gallium Phosphide Yellow Light z RoHS compliant. Emitting Diode.

Contextual Info: 11mm x 1.4mm SIDE VIEW Part Number: AA1114/2SGS/CC Super Bright Green Features Description z Low power consumption. The Super Bright Green source color devices are made with z Ideal for backlighting. Gallium Phosphide Green Light Emitting Diode. z RoHS compliant.

Contextual Info: AA111A Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5 Maximum Conversion Loss (dB)6.0

ET 1114

Contextual Info: 11mm x 1.4mm BACKLIGHT AA1114/2MBC/CC Features Description l IDEAL FOR BACKLIGHTING. SiC Light Emitting Diode. BLUE The Blue source color devices are made with GaN on lLOW POWER CONSUMPTION. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or anti-electrostatic

Contextual Info: 11mm x 1.4mm BACKLIGHT PRELIMINARY SPEC Part Number: AA1114/2PBCA/CC BLUE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description zLOW The Blue source color devices are made with InGaN on POWER CONSUMPTION.

Contextual Info: 11mm x 1.4mm BACKLIGHT Part Number: AA1114/2ES/CC High Efficiency Red Features Description z Low power consumption. The High Efficiency Red source color devices are made with z Ideal for backlighting. Gallium Arsenide Phosphide on Gallium Phosphide Orange

aa117 diode

Contextual Info: AA100-AA104 AA107-AA111 AA114-AA118 SCRs .5A, Planar FEATURES • Maximum Gate Trigger Current: 2,20or 200,uA • Tight Gate Trigger Voltage Range:.44 to .6V • Voltage Ratings: to 400V • Specified for dv/dt and Switching Time DESCRIPTION This data sheet describes Microssmi’s AA Series 0.5ASCRs designed for low-current

DIODE AA116

Abstract: aa117 diode
Contextual Info: SCRs AA100-AA104 .5A, Planar AA114-AA118 FEATURES • Maximum Gate Trigger Current: 2, 20 or 200pA • Tight Gate Trigger Voltage Range: .44 to ,6V • Voltage R atin g s: to 400V AA107-AA111 DESCRIPTION This date sheet describes Microseml's A A Series 0.5A S C R s designed for low-current

siemens 6XV1-830-0AH10

Abstract: clifton resolver thermocouple type K krupp PIC900 A52 opto sensor inductosyn 11brw-300 Siemens 9-pin sub-D pinout RD2 earth leakage relay Balluff absolute encoder
Contextual Info: PiC900 Hardware Manual Version 13.0 Giddings & Lewis Controls, Measurement and Sensing NOTE Progress is an ongoing commitment at Giddings & Lewis. We continually strive to offer the most advanced products in the industry; therefore, information in this document is subject to change without

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5