DIODE A9 Search Results

900 mhz schottky diode

Abstract: bat 62 diode MHz rectifier Q62702-A971 marking code 62 3 pin diode marking code js 3 pin diode
Contextual Info: Silicon Schottky Diode BAT 62 ● Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel Package1) BAT 62 62 Q62702-A971

Contextual Info: SIEMENS Silicon Schottky Diode BAT 62 • Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration tape and reel Package1) BAT 62 62 Q62702-A971

Contextual Info: SIEMENS Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 i-o 3 o1-0

Contextual Info: SIEMENS Silicon Schottky Diode B A T 62 • Low barrier diode for detectors up to GHz frequencies. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 62 62 Q62702-A971 Pin Configuration

Q62702-A919

Abstract: MARKING 54 "Pin Diode"
Contextual Info: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit

JVs sot23

Abstract: BAS116
Contextual Info: SIEM EN S Silicon Low Leakage Diode BAS 116 • Low-leakage applications • Medium speed switching times • Single diode Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 ° °- ^ 1-EHA07002

marking code js

Abstract: BAS116 low-leakage silicon diode Q62702-A919 MARKING 54 "Pin Diode"
Contextual Info: Silicon Low Leakage Diode BAS 116 Low-leakage applications ● Medium speed switching times ● Single diode ● 2 3 1 Type Marking Ordering Code tape and reel BAS 116 JVs Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values

code marking JYs sot-23

Abstract: Q62702-A921 JYs transistor low-leakage silicon diode DIODE BAV JS v JYS SOT-23
Contextual Info: Silicon Low Leakage Diode Array BAV 199 Low-leakage applications ● Medium speed switching times ● Connected in series ● Type Marking Ordering Code tape and reel BAV 199 JYs Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter

Q62702-A988

Abstract: A988 DIODE BAT Code 035 on semiconductor JS marking diode
Contextual Info: Silicon Schottky Diode BAT 66-05 Preliminary Data Low-power Schottky rectifier diode ● For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes ● Type Marking Ordering Code tape and reel BAT 66-05 BAT 66-05 Q62702-A988

code marking JYs sot-23

Abstract: marking jys Q62702-A921 JYs marking transistor BAV199
Contextual Info: Silicon Low Leakage Diode Array BAV 199 Low-leakage applications ● Medium speed switching times ● Connected in series ● 2 3 1 Type Marking Ordering Code tape and reel BAV 199 JYs Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode

BAS116

Contextual Info: Silicon Low Leakage Diode BAS116 • Low Leakage applications • Medium speed switching times • Single diode Type M arking O rdering code 8-m m tape Package BAS116 JVs Q62702-A919 SOT 23 Maximum Ratings D escription BAS116 Symbol U nit Reverse voltage Peak reverse voltage

Contextual Info: DIODE M ODULE DD200GB ULIE76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800 V

ESJA92

Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Contextual Info: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features

EHA07005

Abstract: EHA07002
Contextual Info: SIEM ENS Silicon RF Switching Diode BAT 18. • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code BAT 18 A2 Q62702-A787 Pin Configuration Package1 SOT 23 0- EH1-» EHA07002 BAT 18-04 AU Q62702-A938

A940

Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Contextual Info: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940

Contextual Info: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode

Contextual Info: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics

Contextual Info: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.

diode MARKING A9

Abstract: diode MARKING CODE A9 smd diode a9 smd code marking WV SMD MARKING CODE s4 BAP70-03 diode marking code 77 smd diode code A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Mar 25 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators

BAP70-03

Abstract: DIODE SMD A9 diode MARKING A9
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators

LTC4098-3.6

Abstract: A20-LCD15.6 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

AL6G

Contextual Info: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

diode MARKING CODE A9

Abstract: diode MARKING A9 smd diode a9 smd diode marking A9 BAP70-03 SC-76 MARKING 54 "Pin Diode" smd diode marking 77
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAP70-03 Silicon PIN diode Product specification Supersedes data of 2002 Aug 06 2004 Feb 10 Philips Semiconductors Product specification Silicon PIN diode BAP70-03 FEATURES PINNING • High voltage, current controlled RF resistor for

a9g marking

Abstract: BAS20-V-G 23-Nov-10 BAS21-V
Contextual Info: BAS19-V-G, BAS20-V-G, BAS21-V-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon epitaxial planar diode • Fast switching diode in case SOT-23, especially suited for automatic insertion • General purpose switching applications