DIODE A37 Search Results

a37a

Abstract: BB515 SOD123 BB515 MARKING CODE diode sod123 t4 DIODE T4 marking diode marking 20
Contextual Info: 7110fl2b DG bö 37 7 Tbö IPHIN BB515 UHF VARIABLE CAPACITANCE DIODE The B B515 is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended intended for application in U H F tuners. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage

marking JSs

Abstract: Q62702-A376 Marking code jSs JSs diode
Contextual Info: Silicon Switching Diode Array BAW 100 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

OMRON LY2 iec255 relay

Abstract: electromechanical relay omron ly2 12 v pcb mount relay LY2-D OMRON LY2 PTF08-E 12 V dpdt relay switch LY1F LY4N-D2 OMRON LY2 220/240 VAC
Contextual Info: Electromechanical Relays General-purpose Relay LY A Miniature Power Relay • Equipped with arc barrier. • Dielectric strength: 2,000 V. • Built-in diode models added to the LY Series. • Single-pole and double-pole models are applicable to operating

lt760

Abstract: YG811S0
Contextual Info: YG811S09 5A h+ —/ • <ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully molding. #{& V f Low Vf Connection Diagram Super high speed switching. •t v -*— High reliability by planer design. I Applications High speed power switching.

zener diode A36

Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

zener diode A29

Abstract: ZENER A29 a37 zener a23 zener zener diode A36 diode ZENER A26 A26 zener a36 zener marking codes A32 a59 zener diode
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 – CAZ59C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

25mA 10KV DIODE

Abstract: 10kv rectifier
Contextual Info: RECTIFIER, up to 10kV, 290mA, 300ns January 7, 1998 SM75F SM100F TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r = 7.5-10kV If = 290mA trr = 300nS Low reverse recovery time

Contextual Info: SIEMENS Silicon Switching Diode Array BAW 100 • For high-speed switching • Electrically insulated diodes Type M a r k in g O r d e r in g C o d e ta p e a n d re e l BAW 100 JS s Q62702-A376 P in C o n fig u r a tio n P a c k a g e 1) S O T -143 o- f<3- 0

YG811S09

Contextual Info: YG811S09 5A h + —/ •<ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. #{& V f Low V f Connection Diagram Super high speed sw itching. • tv -* — High reliability by planer design. I Applications High speed pow er sw itchin g.

A37 diode

Abstract: ERA15 general purpose diode marking code -08
Contextual Info: E R A 1 5 i .oa M JE N 'ii : Outline Drawings GENERAL USE RECTIFIER DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • S f&IR te High reliability A 7 -3 —K : Ö

mark AT0

Abstract: ERA15 T151 T810 AT-05 general purpose diode marking code -06 general purpose diode marking code -08
Contextual Info: ERA15 1 .OA Outline Drawings GENERAL USE RECTIFIER DIODE * Features • f c / J '8 M c fc *> , 5 m e 7 f m 3 T O Ultra small package, possible for 5mm pitch automatic IS iT F • Marking insertion. • Sif&IRte High reliability A 7 - 3- K : Ö Color code : White

A37 diode

Abstract: diode a37 KS826S04 IR3e
Contextual Info: KS826S04I5A * ± 'j 1 O utline D raw ings SCHOTTKY BARRIER DIODE • t t * ’ Features Surface m ount device. • i&VF Low V f m wm &m C onnection D iagram Super high speed sw itchin g. • *H£ High reliability by planer design. \4 : A p p lica tio n s

A37 diode

Abstract: KS826S04 A180 a378
Contextual Info: KS826S04I5A * ± 'j 1 O utline D raw ings SCHOTTKY BARRIER DIODE • t t * ’ Features Surface m ount device. • i&VF Low V f m wm &m C onnection D iagram Super high speed sw itchin g. • *H£ High reliability by planer design. \4 : A p p lica tio n s

a372

Abstract: ERC88M-009 DIODE a372
Contextual Info: ERC88M-009 5A SCHOTTKY BARRIER DIODE • f t I Features Insulated package by fully m o ld in g . • <S:VF Low VF • X-f C onnection Diagram Super high speed sw itching. High reliability by planer design. ■ f f l i i : Applications High speed pow er sw itch in g .

LIC HD 13

Abstract: YG811S09
Contextual Info: YG811S09 5A i> 3 SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. • <&VF Low V f m m m & m Connection Diagram Super high speed sw itching. • t v — t - a m tC c ts s ifU tt H igh reliability by planer design. : A p p lic a tio n s

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

k531

Abstract: ERC88M-009 A374
Contextual Info: ERC88M-009I5A > 3 : Outline Drawings 'yhf— ' O J T f ' f t - F SCH O TTKY B A R R IE R DIODE : Features JEDEC EIAJ Insulated package by fully molding. SC-67 • <&VF Low V F Connection Diagram Super high speed switching. • y i s - i —ttmC'kz&im m High reliability by planer design.

A37 diode

Abstract: ERA15 diode a37 marking code ca MARKING CODE A37 general purpose diode marking code -06 37A37
Contextual Info: E R A 1 5 i .oa M JE N 'ii : Outline Drawings G EN ER A L U SE R E C T IF IE R DIODE I Features • jS'J'Sttfctf), 5 m m li7 f S*& ff A * * WAS : Marking Ultra small package, possible for 5mm pitch automatic insertion. • Sf&IRte High reliability A 7 -3 —K : Ö

Contextual Info: se MIKRO n Cases A 21. A 24 SEMIPACK 2 Case A 51 com. cath. = 2 Case A 52 (com. anode = 2) Case A 45 (K = 1, A = 2) Case A 54 (K = 1, A = 3) Section 2: SEMIPACK® Fast Diode Modules Type Vrrm Ifav Ifrms Tease ▲New type -r1 r- M6 V A °c A 25 °C A

ERC80M-006

Contextual Info: ERC80M -006 5 a SCHOTTKY BARRIER DIODE I Features titz7 ; u t - >\,K9 4 7° • 1&lJtt It Insulated package by fully m o ld in g . • te V F Low V p Connection Diagram S up e r h ig h speed s w itc h in g . H ig h reliability by planer d e sig n . ! Applications

A37 diode

Contextual Info: E R A 1 5 i .oa M J E N ' i i : O u t lin e D r a w in g s GENERAL USE RECTIFIER DIODE I Features • jS 'J'S ttfctf), 5 m m li 7 f S*&ff A* WAS Ultra small package, possible for 5m m pitch autom atic : M a r k in g insertion. • S f& IR te High reliability

Contextual Info: KS826S04I5A ! O utlin e D ra w in g s SCHOTTKY BARRIER DIODE : Features Surface m ount device. • V f Low V f • ta y C o n n e c tio n D ia g ra m Super high speed sw itchin g. •T V - * - * s i ± High reliability by planer d e s ig n . \4 : A p p lic a tio n s

Contextual Info: E R C 8 0 M 0 0 6 5a s ± < 1' « íj ^ ík SCHOTTKY BARRIER DIODE • & £ : Features tit-.-? >i>>\>¥? - f 7° • ia lJ # i t Insulate d packa g e by fu lly m o ld in g . • te V F L o w Vp ■ * * « > £ Connection Diagram S u p e r h ig h speed s w itc h in g .

SF 369

Abstract: ERC80M-006 H125
Contextual Info: ERC80M -006 5 a : O utline D ra w in g s SCHOTTKY BARRIER DIODE : Features • 1&lJt t if a* fa & z tit-.y ^ K 7' In su la te d p a ckag e by fu lly m o ld in g . • te V F Low V p C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g .