DIODE A2 Search Results
DIODE A2 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
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Zener Diode, 16 V, USC | Datasheet |
DIODE A2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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L30 dual diodeContextual Info: STPS20200C Power Schottky diode Datasheet production data Features Diode 1 • Low forward voltage drop A1 Very small conduction losses K Diode 2 Negligible switching losses A2 Extremely fast switching Low thermal resistance K -40°C minimum operating Tj |
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STPS20200C O-220FPAB STPS20200CFP O-220AB STPS20200CT STPS20200CG-TR DocID024382 L30 dual diode | |
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Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material |
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STPSC16H065C O-220AB STPSC16H065CT DocID024810 | |
diode chopper
Abstract: BSM300GA120DN2 C67070-A2301-A70
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BSM300GA120DN2 200GAL C67070-A2301-A70 diode chopper BSM300GA120DN2 C67070-A2301-A70 | |
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Contextual Info: DPAD50 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD50 The DPAD50 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD50 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must |
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DPAD50 DPAD50 | |
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Contextual Info: DPAD20 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD20 The DPAD20 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD20 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must |
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DPAD20 DPAD20 | |
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Contextual Info: DPAD10 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD10 The DPAD10 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD10 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must |
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DPAD10 DPAD10 | |
DD200GB40
Abstract: DD200GB80
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DD200GB E76102 DD200GB 42max 34max 05C/W DD200GB40 DD200GB80 | |
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Contextual Info: DPAD2 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD2 The DPAD2 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD2 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 | |
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Contextual Info: DPAD5 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix DPAD5 The DPAD5 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD5 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current leakage must |
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Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
APT0502
Abstract: APTDF400U120G fast recovery diode 1a 1200v
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APTDF400U120G APT0502 APTDF400U120G fast recovery diode 1a 1200v | |
APT0502
Abstract: APTDF430U100G
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APTDF430U100G APT0502 APTDF430U100G | |
IDG 600
Abstract: M61880FP 20P2N-A M61880
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M61880FP REJ03F0068-0100Z M61880FP IDG 600 20P2N-A M61880 | |
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1N4148 krad
Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
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LM136A-2 1N4148 krad SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5 | |
APT0502
Abstract: APTDF500U40G
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APTDF500U40G APT0502 APTDF500U40G | |
APT0502
Abstract: APTDF450U60G
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APTDF450U60G APT0502 APTDF450U60G | |
1N4148w SOD-123
Abstract: 1N4148W a2 1N4148W continental SOD123
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1N4148W OD-123 1N4148W= C-120 1N4148W Rev020905E 1N4148w SOD-123 1N4148W a2 continental SOD123 | |
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Contextual Info: LSDPAD5 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix LSDPAD5 The LSDPAD5 is a low leakage Monolithic Dual Pico-Amp Diode The LSDPAD5 extremely low-leakage monolithic dual diode provides a superior alternative to conventional |
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Contextual Info: LSDPAD10 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix LSDPAD10 The LSDPAD10 is a low leakage Monolithic Dual Pico-Amp Diode The LSDPAD10 extremely low-leakage monolithic dual diode provides a superior alternative to conventional |
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LSDPAD10 LSDPAD10 | |
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Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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STPSC10TH13TI DocID024699 | |
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Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material |
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STPSC8TH13TI DocID024698 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BAV199W Preliminary DIODE DUAL SURFACE MOUNT LOW LEAKAGE DIODE DESCRIPTION The UTC BAV199W is a dual surface mount diode providing the designers with extremely low leakage current. The UTC BAV199W is suitable for automatic insertion |
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BAV199W BAV199W BAV199WL-AL3-R BAV199WG-AL3-R OT-323 QW-R601-045 | |
FMB-24MContextual Info: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded |
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FMB-24M FMB-24M. UL94V-0 September/28/ SSA-03414 FMB-24M | |