DIODE A17 Search Results

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

MSWSH-020-24

Abstract: MEST2G-025-10
Contextual Info: Spice Models for Aeroflex / Metelics PIN Diode Switch Elements CHIP Robert Caverly Non-Linear Diode SPICE N=1 PIN Diode SPST & SPDT Switch Elements S Par's Is mA Iknee mA Repi Ohm s CJmod Series PIN Y Y 2.50E-07 5 1000 0.04 MEST2GFC-010-25 Series Pin N N

PIN diode SPICE model

Abstract: MSWSS-020-40 MSWSHB-020-30 Diodes D250 MSWSH 040-40 MMSPN050-53 MEST2G-080-25 MEST2G-050-80 MSWSH-020-24 MSWSHC-040-40
Contextual Info: Spice Models for Aeroflex / Metelics PIN Diode Switch Elements CHIP Robert Caverly Non-Linear Diode SPICE N=1 PIN Diode SPST & SPDT Switch Elements S Par's Is mA Iknee mA Repi Ohm s CJmod el Rlim Ω t nSec W um CJ50 pF Rs Ω PKG Series PIN Y Y 2.50E-07

DIODE A16

Abstract: if filter 38,9 diode specification table
Contextual Info: Introduction Introduction to Filter Connectors Transient Voltage Suppression Diode Selection Guide Diode Power Selection for Lightning Strike Waveform Threats A DO 160 Waveform 1 MHz Damped Ringing Sine Level Open Circuit Voltage/ Short Circuit Current V/A

a1704

Abstract: marking TP
Contextual Info: RD0106T Ordering number : ENA1704A SANYO Semiconductors DATA SHEET RD0106T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • High breakdown voltage VRRM=600V Low forward voltage (VF max=1.3V) Halogen free compliance

Contextual Info: RD0106T Ordering number : ENA1704A SANYO Semiconductors DATA SHEET RD0106T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • High breakdown voltage VRRM=600V Low forward voltage (VF max=1.3V) Halogen free compliance

Contextual Info: UD0506T Ordering number : ENA1705A SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • High breakdown voltage VRRM=600V Low noise at the time of reverse recovery Halogen free compliance Fast reverse recovery time

A1705

Abstract: A1705-2 TP Sanyo
Contextual Info: UD0506T Ordering number : ENA1705 SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • • • High breakdown voltage VRRM=600V . Fast reverse recovery time. Low noise at the time of reverse recovery.

UD1006

Abstract: TO-220F JEDEC UD1006FR 318 MARKING
Contextual Info: UD1006FR Ordering number : ENA1745 SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V. trr=60ns typ (IF=0.5A, IR=1A). • • VF=1.3V max (IF=10A). Halogen free compliance Specifications

a1704

Contextual Info: RD0106T Ordering number : ENA1704 SANYO Semiconductors DATA SHEET RD0106T Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . Fast reverse recovery time. Low forward voltage (VF max=1.3V).

Contextual Info: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications

A1705

Abstract: UD0506T-H ENA1705A marking TP
Contextual Info: UD0506T Ordering number : ENA1705A SANYO Semiconductors DATA SHEET UD0506T Diffused Junction Silicon Diode Low VF Switching Diode Features • • • High breakdown voltage VRRM=600V Low noise at the time of reverse recovery Halogen free compliance Fast reverse recovery time

UD1006

Abstract: UD1006FR-H A1745
Contextual Info: UD1006FR Ordering number : ENA1745A SANYO Semiconductors DATA SHEET UD1006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • VRRM=600V trr=60ns typ (IF=0.5A, IR=1A) • • VF=1.3V max (IF=10A) Halogen free compliance Specifications

RG2006

Abstract: RG2006n RG2006JN to220ml ENA1784 A1784
Contextual Info: RG2006JN Ordering number : ENA1784 SANYO Semiconductors DATA SHEET RG2006JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: MSWSE-010-16S Silicon PIN Diode Switch Element 1 2 0402P Molded Platic DFN Package Features Description The MSWSE-010-16S is a PIN diode switch element designed for medium incident power applications, up to 10 W C.W. It has low insertion loss and medium

Contextual Info: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP3T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal

Contextual Info: MSWSE-010-16S Silicon PIN Diode Switch Element 1 2 0402P Molded Platic DFN Package Features Description The MSWSE-010-16S is a PIN diode switch element designed for medium incident power applications, up to 10 W C.W. It has low insertion loss and medium

Contextual Info: MSWS3T-1004 PIN DIODE SWITCH ELEMENT PIN #10 PIN #13 PIN #8 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP3T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and

MPN-7442

Abstract: mpn7442
Contextual Info: MPN7442B/C Limiter Diodes Description Features This planar silicon PIN diode is intended for limiter and high speed switch applications. Because of the short lifetime, the diode will self-bias when shunt connected across an RF line and supplied with a low resistance RF

Contextual Info: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz

MEST2G-150-10-CM32

Abstract: a1711
Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch application up to 150 watts. Usable up

a17110

Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable

Contextual Info: MEST2G-150-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-150-10 is a Thermal To Ground Series diode Switch Element in an Aluminum Nitride package. This part is designed for reliable high power switch applications up to 150 watts. Usable

MSWSE-005-15

Abstract: Metelics STD-J-20C
Contextual Info: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-15 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.