DIODE 927 Search Results

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

714 diode

Abstract: DIODE 1T4
Contextual Info: _ • 7fl2ficlc:H OOOROIB ROHfn 1 T 4 ■ R H M _ 1SR139 -100 DIODE _8 Whatney, Irvine, CA 92718 MOLDED RECTIFYING DIODE Silicon Diffused Junction APPLICATION DIMENSIONS General rectification CATHODE BAND ( Green) TYPE NO. Lot No. *0.6±0.1 FEATURES

Z6 DIODE

Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
Contextual Info: Diode, Zener Silicon Planar Voltage Regulator Diode Feature: Low voltage general purpose voltage regulator diode. Absolute Maximum Ratings Ta = 25°°C Description Symbol Working Voltage Tolerance Value Unit ±5 % 250 mA Repetitive Peak Forward Current IFRM

1N4148WS

Contextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C

diode in 5401

Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

SVC364

Contextual Info: Ordering number :EN4275A SVC364 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic

SVC364

Contextual Info: Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic

SVC354

Contextual Info: Ordering number :EN4274A SVC354 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic

SVC354

Contextual Info: Ordering number :EN4274A SVC354 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic

BT 69D

Abstract: FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data

DS2102SY

Abstract: DS2102SY15 DS2102SY16 DS2102SY17 DS2102SY18 DS2102SY19 DS2102SY20
Contextual Info: DS2102SY DS2102SY Rectifier Diode Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2000V ■ High Surge Capability IF AV 6654A IFSM APPLICATIONS 100000A ■ Rectification ■ Freewheel Diode

AN4839

Abstract: DS2102SY DS2102SY15 DS2102SY16 DS2102SY17 DS2102SY18 DS2102SY19 DS2102SY20
Contextual Info: DS2102SY DS2102SY Rectifier Diode Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2000V ■ High Surge Capability IF AV 6654A IFSM APPLICATIONS 100000A ■ Rectification ■ Freewheel Diode

8470B

Abstract: agilent 8472b 8472B apc-7 connector 423B 08473-80002
Contextual Info: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • • • • • Agilent 423B Excellent broadband flatness Low broadband SWR High burnout protection Environmentally rugged Field replaceable diode elements I 50 µA/div

WARBLE TONE GENERATORS

Abstract: piezo transformer driver 6v 2100 Zener diode Telephone Tone Ringer c1100nf WS2418 tone ringer 175-104 "Piezo Speaker" Amplifier TELEPHONE TONE RINGERS
Contextual Info: TELEPHONE TONE RINGER WITH BRIDGE DIODE WS2418 The WS2418 is a monolithic integrated circuit telephone tone ringer with bridge diode, when coupled with an appropriate transducer, it replaces the electromechanical bell. This device is designed for use with either a piezo

LTC4098-3.6

Abstract: SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+

br - b2d

Abstract: br b2d
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device

Contextual Info: MXP2001 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device

4274A

Contextual Info: Ordering num ber: EN 4274A No. 4274A i SVC354 Diffused Junction Type Silicon Diode SAMYO i Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications F eatures • Excellent matching characteristics because of composite type. • Manufacturing processes reducible and automatic mounting supported.

photovoltaic cell

Abstract: Photovoltaic MXP1144 "PHOTOVOLTAIC CELL"
Contextual Info: MXP1144 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device

photovoltaic

Abstract: MXP1125
Contextual Info: MXP1125 Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device

Contextual Info: MXP1005 Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps SANTA ANA DIVISION P RODUCT P REVIEW KEY FEATURES Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications. The device is rated for 1A for applications where the device