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    DIODE 864 Search Results

    DIODE 864 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 864 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 PDF

    Aspheric Lens TO Can

    Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
    Contextual Info: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your


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    635nm 850nm. 01JAN01 Aspheric Lens TO Can 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780 PDF

    skiip 33 ups 063

    Abstract: semikron skiip 33 skiip 33 ups SKIIP CASE S4 skiip gar 170 1000A current sensors
    Contextual Info: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    IGBT11) Rthjs10) skiip 33 ups 063 semikron skiip 33 skiip 33 ups SKIIP CASE S4 skiip gar 170 1000A current sensors PDF

    semikron skiip 1242 gb 120

    Abstract: skiip 33 ups 063 semikron skiip 33 skiip gb 120 SKiiP 1242 GB 120 . 407 CTV IGBT 1000A SKIIP CASE S4 semikron 1242 gb 120
    Contextual Info: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    IGBT11) Rthjs10) semikron skiip 1242 gb 120 skiip 33 ups 063 semikron skiip 33 skiip gb 120 SKiiP 1242 GB 120 . 407 CTV IGBT 1000A SKIIP CASE S4 semikron 1242 gb 120 PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    4420 Transistor

    Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
    Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23 PDF

    S4 89 DIODE

    Contextual Info: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    skiip 24

    Contextual Info: SKiiP 1013GB122-2DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms


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    1013GB122-2DL 1013GB122-2DL skiip 24 PDF

    Contextual Info: SKiiP 1013GB172-2DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms


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    1013GB172-2DL 1013GB172-2DL PDF

    ARR48P600

    Abstract: 61884 b0401
    Contextual Info: Industrial Microphotonics Company 600W QCW Laser Diode Array Part Number: ARR48P600 AA PACKAGE • Packaged 12-Bar Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS


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    ARR48P600 12-Bar 785-1064nm) ------600W laser2000 B-04/01 ARR48P600 61884 b0401 PDF

    Contextual Info: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the


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    MAX6698 PDF

    pin configuration of IC 74138

    Abstract: pin out diagram of 74138 ic
    Contextual Info: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the


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    MAX6698 MAX6698UE38-T MAX6698UE99 21-0066I U16-1* MAX6698UE99-T MAX6698UE9C MAX6698UE9C pin configuration of IC 74138 pin out diagram of 74138 ic PDF

    74138 ic diagram

    Abstract: 103a1
    Contextual Info: 19-3476; Rev 1; 4/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the


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    MAX6698 74138 ic diagram 103a1 PDF

    thermistor conversion table

    Abstract: pin configuration of IC 74138 9A113 ic pin configuration 74138 ms 21921 thermistor PHILIPS 640 pin out diagram of 74138 ic ntc philips thermistor 640 104694 Betatherm
    Contextual Info: 19-3476; Rev 0; 1/05 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the


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    MAX6698 MAX6698 thermistor conversion table pin configuration of IC 74138 9A113 ic pin configuration 74138 ms 21921 thermistor PHILIPS 640 pin out diagram of 74138 ic ntc philips thermistor 640 104694 Betatherm PDF

    ZHCS2000

    Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
    Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6


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    ZHCS2000 OT23-6 ZHCS2000TA ZHCS2000TC ZHCS2000 Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728 PDF

    ZS20

    Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
    Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6


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    ZHCS2000 OT23-6 ZHCS2000TA ZHCS2000TC ZS20 ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC PDF

    T1 SOT23-6

    Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
    Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6


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    ZHCS2000 OT23-6 ZHCS2000TA ZHCS2000TC T1 SOT23-6 T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode PDF

    uA 741

    Abstract: 6 pin laser diode automatic laser power control Laser Diode 10 pin MS-026 VSC7938 VSC7939 VSC7940
    Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7940 Features Applications • Power Supply: 5V ±5% • DC-Coupled to Laser Diode • Programmable Modulation Current: 5mA to 100mA


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    125Gb/s VSC7940 100mA 622Mb/s, 244Gb/s, 488Gb/s, 062Gb/s) VSC7940 uA 741 6 pin laser diode automatic laser power control Laser Diode 10 pin MS-026 VSC7938 VSC7939 PDF

    Contextual Info: APTDC902U1201G Single SiC Diode Power Module VRRM = 1200V IF = 90A @ Tc = 80°C Application • • • • Uninterruptible Power Supply UPS Induction heating Welding equipment High speed rectifiers Features • • • SiC Schottky Diode Zero reverse recovery


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    APTDC902U1201G PDF

    Contextual Info: PD47_06 POW-R-BLOKTM Dual SCR / Diode Isolated Module 600 Amperes, Up to 2400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual SCR/Diode Modules are designed for use in applications requiring


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    TSTA7300

    Contextual Info: TSTA7300 GaAlAs IR Emitting Diode, Hermetically Sealed TO18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external optics.


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    TSTA7300 TSTA7300 D-74025 15-Jul-96 PDF

    4422

    Abstract: 4422 datasheet ZDC833A 4444 diode DSA003722
    Contextual Info: SOT23 SILICON DUAL VARIABLE CAPACITANCE DIODE ZDC833A DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 ISSUE 2 – JANUARY 1998 FEATURES * VHF to UHF operation * Common Cathode Dual Diode * Monolithic construction ZDC833A PIN CONFIGURATION


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    ZDC833A V/20V, 50MHz 4422 4422 datasheet ZDC833A 4444 diode DSA003722 PDF

    5BJC4100

    Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting


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    PDF

    Contextual Info: PD42_06 POW-R-BLOKTM Dual SCR / Diode Isolated Module 600 Amperes, Up to 2400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual SCR/Diode Modules are designed for use in applications requiring


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