DIODE 851 Search Results

U-LD-851066D-preliminary

Abstract: U-LD-851066D 10mw 850nm to ld 850nm laser diode 850nm 5mw laser diode high power 850nm ld 850 nm to-can
Contextual Info: U-LD-851066D-preliminary UNION OPTRONICS CORP. 850nm Laser Diode 850nm Laser Diode U-LD-851066D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18(ψ5.6mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

Contextual Info: BAS16WS-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912

Contextual Info: BAS16WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of

diode in 5401

Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

Contextual Info: laser diode module, elliptical beam, ø12mm A compact, ergonomically-designed 635/639nm laser diode module for a wide range of applications such as industrial alignment, positioning and inspection and sensing. Laser diode modules from the Optoelectronics Company are available in

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

sot23 marking tr1

Abstract: HSMP-3880
Contextual Info: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.

transistor D 2394

Abstract: HSMP-3880 A0 SOT-23 PIN diode SPICE model sot top marking codes HSMP3880 pin diode agilent marking TR1 SOT-23
Contextual Info: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.

MARKING SOT23 tr2

Abstract: sot23 marking tr1 marking P2 sot-23 MARKING 313 sot-23 marking code 916 diode HSMP-3880
Contextual Info: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.

Contextual Info: BAT46W-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: BAT46W-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as

Diode RJ 4A

Abstract: aeg diode w200v diode 8517E BYT 1000 ir 0588 diode byt 85 1000
Contextual Info: A E G CORP 17E D 002^4213 OOOTf l OS 3 BYT 85 TTKUMFIIMIKIIM electronic Creative Technolog es T ~ 0 2 ~ i *7 Ultra Fast Recovery Silicon Power Diode Application: Fast switched mode power supplies, freeweeling and snubber diode in motorcontrol circuits Features:

metelics FSCM 59365

Abstract: MSS30 MSS30-248-B20 442-E45 b20 diode FSCM 59365
Contextual Info: MSS-30,000 Series Low Barrier Schottky Diode metelics CORPORATION Features Applications • Lo w Rs— 5Q • Mixers: single diode, image reject, image enhancement, ring quad • Lo w NF • Doublers • Available in many configurations • Modulators • Tight batch matching available

TSHF5400

Contextual Info: TELEFUNKEN Semiconductors TSHF 5400 High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description TSHF 5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

KVCF1-8512

Contextual Info: VCSEL KVCF1-8512 VCSEL, or Vertical Cavity Surface Emitting Laser, is semiconductor microlaser diode that emits light in a cylindrical beam vertically from the surface of a fabricated wafer. Unit: ㎜ DIMENSIONS Φ5.35 ±0.1 Φ4.66 ±0.05 ±0.1 ±1.0 3.5

Contextual Info: 7 -f> l U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR Case : ITO -220 200V 5A É lit . # •trr 3 5 n s • 7 JIÆ -JL /K •S R B S m • 3 7 J — m -Y Jb OA. SSBÆ •a«, « s . • Æ tè ü fa RATINGS Absolute Maximum Ratings

Contextual Info: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code

mark 68m

Abstract: DSA003644
Contextual Info: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851A Z Rev.1 Nov. 2001 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information

Hitachi DSA002718

Contextual Info: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851 Z Rev 0 May 2000 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information

Contextual Info: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1210-0200 Previous: ADE-208-851A Rev.2.00 Jun 13, 2005 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

mark 68m

Abstract: SC-59A
Contextual Info: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1210-0200 Previous: ADE-208-851A Rev.2.00 Jun 13, 2005 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

30 kv diode

Abstract: P diode BQB 80 THBG01 THD9751 THD9752 D 10 N diode SCHOTT diode
Contextual Info: ALLEGRO MICROSYSTEM S 8514019 INC SPRAGUE. =13 D • 0304330 SEM ICO N D S/ IC S □D 0 3 h n 93D 2 ■ ALGR 03619 DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C ^BR Device Type II* *D Min. <fclR m-A Max. (nA) i'V R (V) Min.