DIODE 8109 Search Results
DIODE 8109 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
| MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet | ||
| CEZ6V8 |
|
Zener Diode, 6.8 V, ESC | Datasheet |
DIODE 8109 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
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TSFF5210 TSFF5210 2002/95/Eany 18-Jul-08 | |
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Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 2002/95/Es 08-Apr-05 | |
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Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 2002/95/Es 08-Apr-05 | |
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Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 2002/95/EC 2002/9ake D-74025 08-Mar-05 | |
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Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 2002/9s 08-Apr-05 | |
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Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 2002/95/EC 2002/9s 08-Apr-05 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 D-74025 04-May-04 | |
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Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 D-74025 03-Jun-04 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 D-74025 03-Jun-04 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 08-Apr-05 | |
TSFF5410Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 D-74025 23-Jun-04 | |
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Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 D-74025 13-Apr-04 | |
TSFF5210Contextual Info: TSFF5210 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5210 TSFF5210 D-74025 23-Jun-04 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
TSFF5410 TSFF5410 D-74025 13-Apr-04 | |
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tp 2116
Abstract: 21163 2044B 2SD1806
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EN2116B 2SD1806 2045B 2SD1806] 2SD1806-applied 2044B tp 2116 21163 2044B 2SD1806 | |
TSFF5410Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm |
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TSFF5410 TSFF5410 18-Jul-08 | |
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Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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TSFF5410 2002/95/EC 2002/96/EC TSFF5410 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
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Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5210 2002/95/EC 2002/96/EC TSFF5210 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5410 2002/95/EC 2002/96/EC TSFF5410 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5410 2002/95/EC 2002/96/EC TSFF5410 11-Mar-11 | |
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Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5210 TSFF5210 2002trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11 | |
TSFF5410Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
TSFF5410 TSFF5410 2002/95/Etrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
TSFF5210Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm |
Original |
TSFF5210 TSFF5210 18-Jul-08 | |