DIODE 726 Search Results

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: Product specification Philips Semiconductors BBY31 Variable capacitance diode DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning applications in thick and thin film

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

acpicompliant win 7

Contextual Info: ACPI-COMPLIANT SMBUS THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TC1066 TC1066 *Patent Pending ACPI-COMPLIANT SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature

TC1068

Abstract: TC1068MQR TCM1617EV TCN75 tc1068.1
Contextual Info: SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TC1068 TC1068 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance

Contextual Info: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

Contextual Info: SS3003CH Ordering number : EN8992 SANYO Semiconductors DATA SHEET SS3003CH Low VF Schottky Barrier Diode 30V, 3.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.

Contextual Info: □IXYS MEO 500-06DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module VRSM VRRM Type Symbol N rms ' favm ^FRM TVJ = 150°C; fi^ t TVJ = 45 °C; TVJ = 150°C; P,„, Tc - 25°C V .S O L 50/60 Hz, RMS I,sol < 1 mA 726 514 2680 A A A Hz), Hz), Hz),

bav99

Abstract: BAV-99S-E6327 bav99 infineon
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W

AUIRGB4062D1

Abstract: AUGB4062D1 AUIRGSL4062D1 AUIRGS4062D AUIRGB4062D
Contextual Info: PD - 30438 AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses

aurix

Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by

AUIRGP4062D1

Abstract: Fast Recovery Rectifier, 300V .47 j 100 auirgp4062
Contextual Info: PD - 96437 AUTOMOTIVE GRADE AUIRGP4062D1 AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC Nominal = 24A Low VCE (on) Trench IGBT Technology Low Switching Losses

K30N60

Contextual Info: SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

APTM50HM75FRT

Abstract: APTM50H*FRT
Contextual Info: APTM50HM75FRT VDSS = 500V RDSon = 75mW max @ Tj = 25°C VRRM = 1200V IFAV25 = 45A Full – Bridge With Input diode bridge MOSFET Power Module CR1 +A VBUS1 +B VBUS2 Application • Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies

C 10681

Contextual Info: ▼ Semiconductor, Inc. TC1068 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Tempera­

S4 46a DIODE schottky

Abstract: APT0406 APT0501 APT0502 APTM50HM75SCTG A1012-0
Contextual Info: APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR1A Q3 G3 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior

Contextual Info: Ordering number : ENN7223 ESVD301 Varactor Diode ESVD301 For X Band VCO Preliminary Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1317 0.50 0.18 0.80 0.50 1 0.35 [ESVD301] 0.05 0.80 1 Marking 1.60 2 Bottom view 1 : Cathode

ESVD301

Contextual Info: Ordering number : ENN7223 ESVD301 Varactor Diode ESVD301 For X Band VCO Preliminary Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1317 0.50 0.18 0.80 0.50 1 0.35 [ESVD301] 0.05 0.80 1 Marking 1.60 2 Bottom view 1 : Cathode

1N5811CBUS

Abstract: mil-prf-19500/742 1N5807 1N5811 EIA-481-B
Contextual Info: 1N5807CBUS thru 1N5811CBUS SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/742 and is ideal for high-reliability applications where a failure cannot be

SL9901

Contextual Info: A PLESSEY ” Semiconductors, MAY 1988 PRELIMINARY INFORMATION SL9901 SO MHz TRANSIM PEDANCE AMPLIFIER Supercedes August 1987 Edition SL9901 The SL9901 is a monolithic silicon integrated circuit designed to interface between a detector diode and a decoder in a Fibre Optic Receiver

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

D06E60

Abstract: PG-TO252-3 IDD06E60 D06E6 marking diode 6a
Contextual Info: IDD06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling

P-channel power mosfet SO-8

Abstract: SI4823DY
Contextual Info: Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si4776DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.016 at VGS = 10 V 11.9 0.020 at VGS = 4.5 V 10.6 • Halogen-free According to IEC 61249-2-21 Definition